KR20140138817A - 고효율 화합물 반도체 태양 전지를 위한 구조 및 방법 - Google Patents

고효율 화합물 반도체 태양 전지를 위한 구조 및 방법 Download PDF

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Publication number
KR20140138817A
KR20140138817A KR1020147027472A KR20147027472A KR20140138817A KR 20140138817 A KR20140138817 A KR 20140138817A KR 1020147027472 A KR1020147027472 A KR 1020147027472A KR 20147027472 A KR20147027472 A KR 20147027472A KR 20140138817 A KR20140138817 A KR 20140138817A
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layer
gaas
silicon
template
cell
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Korean (ko)
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파완 카프르
메드다드 엠. 모슬레히
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솔렉셀, 인크.
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H10F10/1425Inverted metamorphic multi-junction [IMM] photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020147027472A 2012-02-29 2013-02-28 고효율 화합물 반도체 태양 전지를 위한 구조 및 방법 Withdrawn KR20140138817A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261605186P 2012-02-29 2012-02-29
US61/605,186 2012-02-29
PCT/US2013/028468 WO2013130914A1 (en) 2012-02-29 2013-02-28 Structures and methods for high efficiency compound semiconductor solar cells

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KR20140138817A true KR20140138817A (ko) 2014-12-04

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KR1020147027472A Withdrawn KR20140138817A (ko) 2012-02-29 2013-02-28 고효율 화합물 반도체 태양 전지를 위한 구조 및 방법

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US (1) US20130337601A1 (enExample)
JP (1) JP6199323B2 (enExample)
KR (1) KR20140138817A (enExample)
AU (1) AU2013225860B2 (enExample)
WO (1) WO2013130914A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101635970B1 (ko) * 2015-02-17 2016-07-04 국방과학연구소 저압 화학기상증착법을 이용한 게르마늄 단결정 박막 제조 방법
KR101960265B1 (ko) * 2017-12-29 2019-03-20 (재)한국나노기술원 발광형 태양 집광 장치용 다중접합 태양전지의 제조방법 및 그 다중접합 태양전지를 이용한 발광형 태양 집광 장치
KR20210136418A (ko) 2020-05-07 2021-11-17 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법
KR20220108138A (ko) * 2019-12-02 2022-08-02 어플라이드 머티어리얼스, 인코포레이티드 기판을 프로세싱하기 위한 방법들 및 장치

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