JP2015513090A - 微小機械測定素子および微小機械測定素子の製造方法 - Google Patents
微小機械測定素子および微小機械測定素子の製造方法 Download PDFInfo
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- JP2015513090A JP2015513090A JP2014560394A JP2014560394A JP2015513090A JP 2015513090 A JP2015513090 A JP 2015513090A JP 2014560394 A JP2014560394 A JP 2014560394A JP 2014560394 A JP2014560394 A JP 2014560394A JP 2015513090 A JP2015513090 A JP 2015513090A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
Abstract
Description
さらに本発明は微小機械測定素子の製造方法に関する。
1つの好ましい変形実施例によれば、この担体はFR4回路基板として実装され、キャップはプラスチックで実装される。
21 : 検知素子
210 : メンブレン
211 : メンブレンの下面
212 : メンブレンの上面
22 : 基板
3 : 担体
41 : 第1のはんだ接続部
42 : 第2のはんだ接続部
51 : 第1の小室
52 : 第2の小室
61 : 第1の開口部
62 : 第2の開口部
7 : キャップ
8 : エラストマ体
91,92 : メタライジング部
10 : コンタクトパッド
11 : 貫通接続部
12 : 外部コンタクト
13 : 抵抗パターン
14 : 導電部
101,102,103 : 方法ステップ
Claims (15)
- 検知素子(21)と担体(3)とを備えた微小機械測定素子(1)であって、
前記検知素子(21)は、少なくとも1つの第1のはんだ接続部(41)と少なくとも1つの第2のはんだ接続部(42)とを用いて上記の担体(3)と接続されており、
前記検知素子(21)は、前記第1のはんだ接続部(41)を介して電気的に接続されており、
前記検知素子(21)、前記担体(3)、および前記第2のはんだ接続部(42)は、第1の小室(51)を形成し、前記第1の小室(51)は、第1の開口部(61)を備える、
ことを特徴とする微小機械測定素子。 - 前記検知素子(21)は下面(211)と上面(212)とを有するメンブレン(210)を備え、
前記メンブレン(210)の上面(212)は、前記第1の開口部(61)によって第1の媒体が到達可能となっている、
ことを特徴とする、請求項1に記載の微小機械測定素子。 - 前記第1の開口部(61)は、前記担体(3)に形成されることを特徴とする、請求項1または2に記載の微小機械測定素子。
- 前記第2のはんだ接続部(42)は、環状に形成されることを特徴とする、請求項1乃至3のいずれか1項に記載の微小機械測定素子。
- 前記検知素子(21)と前記第1および第2のはんだ接続部(41,42)との間には、それぞれエラストマ体(8)が配設されていることを特徴とする、請求項1乃至4のいずれか1項に記載の微小機械測定素子。
- 前記エラストマ体(8)と前記第1のはんだ接続部(41)との間に、蛇行形状または螺旋形状に形成されたメタライジング部(91)が配設されていることを特徴とする、請求項5に記載の微小機械測定素子。
- 前記第1の小室(51)は、少なくとも部分的に保護層が設けられていることを特徴とする、請求項1乃至6のいずれか1項に記載の微小機械測定素子。
- 前記保護層は、パリレンから成ることを特徴とする、請求項7に記載の微小機械測定素子。
- 前記検知素子(21)は、前記担体(3)に向いていない面が直接基板(22)と接続されており、
第2の小室(52)が、少なくとも部分的に前記検知素子(21)および前記基板(22)によって形成されており、
前記第2の小室(52)は、前記担体(3)および前記検知素子(21)を貫通して延在する第2の開口部(62)を備える、
ことを特徴とする、請求項1乃至8のいずれか1項に記載の微小機械測定素子。 - 前記メンブレン(210)の下面(212)は、前記第2の開口部(61)によって第2の媒体が到達可能となっている、ことを特徴とする、請求項9に記載の微小機械測定素子。
- 前記微小機械測定素子(1)は、圧力センサとして実装されていることを特徴とする、請求項1乃至10のいずれか1項に記載の微小機械測定素子。
- 前記微小機械測定素子(1)は、ガスセンサとして実装されていることを特徴とする、請求項1乃至11のいずれか1項に記載の微小機械測定素子。
- 前記微小機械測定素子(1)は、加速度センサとして実装されていることを特徴とする、請求項1乃至12のいずれか1項に記載の微小機械測定素子。
- 微小機械測定素子(1)の製造方法であって、
検知素子(21)を準備するステップと、
媒体を導入するための少なくとも1つの第1の開口部(61)と、少なくとも前記検知素子(21)の電気的接続部のための貫通接続部とを備える、担体(3)を準備するステップと、
前記検知素子(21)を前記担体(3)と接続するステップであって、前記検知素子(21)の前記担体(3)との接続によって、前記検知素子(21)の前記電気的接続部および前記検知素子(21)への媒体導入部が1つのプロセスステップで生成されるステップと、
を備えることを特徴とする方法。 - 前記検知素子(21)の前記担体(3)との接続は、フリップチップはんだ接続によって行われる、ことを特徴とする請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210102021 DE102012102021A1 (de) | 2012-03-09 | 2012-03-09 | Mikromechanisches Messelement und Verfahren zur Herstellung eines mikromechanischen Messelements |
DE102012102021.3 | 2012-03-09 | ||
PCT/EP2013/054725 WO2013132065A2 (de) | 2012-03-09 | 2013-03-08 | Mikromechanisches messelement und verfahren zur herstellung eines mikromechanischen messelements |
Publications (2)
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JP2015513090A true JP2015513090A (ja) | 2015-04-30 |
JP5981571B2 JP5981571B2 (ja) | 2016-08-31 |
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JP2014560394A Expired - Fee Related JP5981571B2 (ja) | 2012-03-09 | 2013-03-08 | 微小機械測定素子および微小機械測定素子の製造方法 |
Country Status (6)
Country | Link |
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US (1) | US9506831B2 (ja) |
EP (2) | EP3346249A1 (ja) |
JP (1) | JP5981571B2 (ja) |
DE (1) | DE102012102021A1 (ja) |
TW (1) | TW201336774A (ja) |
WO (1) | WO2013132065A2 (ja) |
Families Citing this family (5)
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DE102015100757B3 (de) | 2015-01-20 | 2016-06-16 | Epcos Ag | Modul mit spannungsfrei befestigtem MEMS-Bauelement |
KR101868833B1 (ko) * | 2016-09-13 | 2018-06-20 | (주)포인트엔지니어링 | 마이크로 센서 패키지 |
DE102017103896A1 (de) | 2017-02-24 | 2018-08-30 | Endress+Hauser SE+Co. KG | Differenzdruckmesseinrichtung |
DE102017205978B4 (de) * | 2017-04-07 | 2021-11-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikrofluidisches System zur Kultivierung von oder der Analyse an lebenden Zellen oder Biomolekülen sowie ein Verfahren zu seiner Herstellung |
EP4177217A1 (en) * | 2021-11-05 | 2023-05-10 | TE Connectivity Solutions GmbH | Fabrication method of mems transducer element |
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2012
- 2012-03-09 DE DE201210102021 patent/DE102012102021A1/de not_active Withdrawn
-
2013
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- 2013-03-08 WO PCT/EP2013/054725 patent/WO2013132065A2/de active Application Filing
- 2013-03-08 JP JP2014560394A patent/JP5981571B2/ja not_active Expired - Fee Related
- 2013-03-08 EP EP18151268.2A patent/EP3346249A1/de not_active Withdrawn
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JP2007248212A (ja) * | 2006-03-15 | 2007-09-27 | Fujikura Ltd | 圧力センサパッケージ及び電子部品 |
JP2007309914A (ja) * | 2006-04-20 | 2007-11-29 | Denso Corp | 物理量センサの製造方法 |
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US20150027224A1 (en) | 2015-01-29 |
DE102012102021A1 (de) | 2013-09-12 |
EP2823276A2 (de) | 2015-01-14 |
TW201336774A (zh) | 2013-09-16 |
WO2013132065A2 (de) | 2013-09-12 |
EP3346249A1 (de) | 2018-07-11 |
WO2013132065A3 (de) | 2014-01-16 |
US9506831B2 (en) | 2016-11-29 |
JP5981571B2 (ja) | 2016-08-31 |
EP2823276B1 (de) | 2018-05-02 |
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