JP2015511667A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015511667A5 JP2015511667A5 JP2014561293A JP2014561293A JP2015511667A5 JP 2015511667 A5 JP2015511667 A5 JP 2015511667A5 JP 2014561293 A JP2014561293 A JP 2014561293A JP 2014561293 A JP2014561293 A JP 2014561293A JP 2015511667 A5 JP2015511667 A5 JP 2015511667A5
- Authority
- JP
- Japan
- Prior art keywords
- sputter device
- rotatable
- sputter
- deposition apparatus
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 22
- 238000004544 sputter deposition Methods 0.000 claims 10
- 239000011248 coating agent Substances 0.000 claims 7
- 238000000576 coating method Methods 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2012/054261 WO2013135265A1 (en) | 2012-03-12 | 2012-03-12 | Mini rotatable sputter devices for sputter deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015511667A JP2015511667A (ja) | 2015-04-20 |
| JP2015511667A5 true JP2015511667A5 (enExample) | 2015-05-28 |
| JP6073383B2 JP6073383B2 (ja) | 2017-02-01 |
Family
ID=45852532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014561293A Expired - Fee Related JP6073383B2 (ja) | 2012-03-12 | 2012-03-12 | スパッタ堆積用の小型の回転可能なスパッタデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20160189939A1 (enExample) |
| EP (1) | EP2826057B1 (enExample) |
| JP (1) | JP6073383B2 (enExample) |
| KR (1) | KR101780466B1 (enExample) |
| CN (1) | CN104160471B (enExample) |
| TW (1) | TWI567216B (enExample) |
| WO (1) | WO2013135265A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107636195A (zh) * | 2015-06-05 | 2018-01-26 | 应用材料公司 | 溅射沉积源、溅射装置及其操作方法 |
| KR102337533B1 (ko) * | 2015-06-16 | 2021-12-09 | 슈나이더 게엠베하 운트 코. 카게 | 렌즈들의 코팅을 위한 장치, 방법 및 용도 |
| KR102407392B1 (ko) * | 2015-07-03 | 2022-06-13 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 이를 이용한 스퍼터링 방법 |
| US12057297B2 (en) * | 2015-10-22 | 2024-08-06 | Richard DeVito | Deposition system with integrated cooling on a rotating drum |
| DE102016125278A1 (de) | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Vorrichtung, Verfahren und Verwendung zur Beschichtung von Linsen |
| CN107354443B (zh) * | 2017-07-26 | 2019-10-11 | 中国电子科技集团公司第五十五研究所 | 一种调节磁控溅射镀膜均匀性的装置 |
| CN109487225A (zh) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | 磁控溅射成膜装置及方法 |
| BE1027427B1 (nl) * | 2019-07-14 | 2021-02-08 | Soleras Advanced Coatings Bv | Bewegingssystemen voor sputter coaten van niet-vlakke substraten |
| EP4270444A1 (en) * | 2022-04-27 | 2023-11-01 | Bühler Alzenau GmbH | Magnetron sputtering system with tubular sputter cathode and method for controlling a layer thickness |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19610253C2 (de) * | 1996-03-15 | 1999-01-14 | Fraunhofer Ges Forschung | Zerstäubungseinrichtung |
| JP2002529600A (ja) * | 1998-11-06 | 2002-09-10 | シヴァク | 高レート・コーティング用のスパッタリング装置および方法 |
| DE10145201C1 (de) * | 2001-09-13 | 2002-11-21 | Fraunhofer Ges Forschung | Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben |
| WO2006076345A2 (en) * | 2005-01-13 | 2006-07-20 | Cardinal Cg Company | Reduced maintenance sputtering chambers |
| JP2008038192A (ja) * | 2006-08-04 | 2008-02-21 | Optorun Co Ltd | スパッタ源、スパッタ成膜装置およびスパッタ成膜方法 |
| JP2009024230A (ja) * | 2007-07-20 | 2009-02-05 | Kobe Steel Ltd | スパッタリング装置 |
| CN102356450A (zh) * | 2009-03-20 | 2012-02-15 | 应用材料公司 | 具有高温可旋转靶的沉积设备及该设备的操作方法 |
| JP5240782B2 (ja) * | 2009-05-18 | 2013-07-17 | 株式会社神戸製鋼所 | 連続成膜装置 |
| EP2306489A1 (en) * | 2009-10-02 | 2011-04-06 | Applied Materials, Inc. | Method for coating a substrate and coater |
| EP2640865B1 (en) * | 2010-11-17 | 2020-05-13 | Soleras Advanced Coatings bvba | Soft sputtering magnetron system |
-
2012
- 2012-03-12 US US14/384,287 patent/US20160189939A1/en not_active Abandoned
- 2012-03-12 KR KR1020147028546A patent/KR101780466B1/ko not_active Expired - Fee Related
- 2012-03-12 WO PCT/EP2012/054261 patent/WO2013135265A1/en not_active Ceased
- 2012-03-12 EP EP12709309.4A patent/EP2826057B1/en not_active Not-in-force
- 2012-03-12 JP JP2014561293A patent/JP6073383B2/ja not_active Expired - Fee Related
- 2012-03-12 CN CN201280071216.6A patent/CN104160471B/zh not_active Expired - Fee Related
-
2013
- 2013-03-12 TW TW102108667A patent/TWI567216B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015511667A5 (enExample) | ||
| JP6073383B2 (ja) | スパッタ堆積用の小型の回転可能なスパッタデバイス | |
| JP2013167353A5 (enExample) | ||
| TWI680882B (zh) | 積層體及阻氣薄膜 | |
| Panjan | Influence of substrate rotation and target arrangement on the periodicity and uniformity of layered coatings | |
| Zhang et al. | Thin film encapsulation for organic light-emitting diodes using inorganic/organic hybrid layers by atomic layer deposition | |
| MX355110B (es) | Metodo para producir un sustrato revestido con una pila que incluye una capa de oxido conductor transparente. | |
| WO2012142439A8 (en) | Method and apparatus for ion-assisted atomic layer deposition | |
| WO2014133929A3 (en) | Window units made using ceramic frit that dissolves physical vapor deposition (pvd) deposited coatings, and/or associated methods | |
| EP3929326A3 (en) | Compositions and processes for depositing carbon-doped silicon-containing films | |
| Han et al. | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation | |
| Ding et al. | An XPS study on the chemical bond structure at the interface between SiOxNy and N doped polyethylene terephthalate | |
| WO2008126811A1 (ja) | マグネトロンスパッタ装置 | |
| KR20120079716A (ko) | 내지문 코팅 방법 및 장치 | |
| JP2014043094A (ja) | ガスバリア性フィルム | |
| MX2016006195A (es) | Acristalamiento que comprende un sustrato recubierto con una pila que comprende una capa funcional formada de plata y una capa inferior de bloqueo grueso formada de tiox. | |
| JP2014502038A5 (enExample) | ||
| CN104775102A (zh) | 卷对卷磁控溅射阴极与柱状多弧源相结合的真空镀膜系统 | |
| MX2017004159A (es) | Sustrato provisto con una pila que tiene propiedades termicas y una capa intermedia superestequiometrica. | |
| TW201714318A (en) | Solar cell structure and method for manufacturing the same | |
| TW201614726A (en) | Method of depositing a layer in a via or trench, method of manufacturing a transistor, layer stack for an electronic device, and an electronic device | |
| JP6396367B2 (ja) | Ｐｖｄアレイ用の多方向レーストラック回転カソード | |
| WO2011029706A3 (en) | Method of controlling the composition of a photovoltaic thin film | |
| JP2016212941A5 (enExample) | ||
| CN204644456U (zh) | 卷对卷磁控溅射阴极与柱状多弧源相结合的真空镀膜设备 |