TW201714318A - Solar cell structure and method for manufacturing the same - Google Patents

Solar cell structure and method for manufacturing the same

Info

Publication number
TW201714318A
TW201714318A TW105131556A TW105131556A TW201714318A TW 201714318 A TW201714318 A TW 201714318A TW 105131556 A TW105131556 A TW 105131556A TW 105131556 A TW105131556 A TW 105131556A TW 201714318 A TW201714318 A TW 201714318A
Authority
TW
Taiwan
Prior art keywords
forming
layer
oxide layer
titanium oxide
solar cell
Prior art date
Application number
TW105131556A
Other languages
Chinese (zh)
Other versions
TWI596785B (en
Inventor
Wei-Tse Hsu
Sheng-Wen CHAN
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Publication of TW201714318A publication Critical patent/TW201714318A/en
Application granted granted Critical
Publication of TWI596785B publication Critical patent/TWI596785B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of forming a solar cell structure is provided, which includes forming a metal electrode on a substrate, forming an absorber layer on the metal electrode, and forming a buffer layer on the absorber layer. The method also forms a titanium oxide layer on the buffer layer, wherein a thickness of the titanium oxide layer is greater than 0 and less than 10nm. The method further forms a transparent conductive oxide layer on the titanium oxide layer. The step of forming the titanium oxide layer is atomic layer deposition (ALD) performed at a temperature of 100 DEG C to 180 DEG C with a precursor of titanium tetraisopropoxide.
TW105131556A 2015-10-07 2016-09-30 Solar cell structure and method for manufacturing the same TWI596785B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104132976 2015-10-07

Publications (2)

Publication Number Publication Date
TW201714318A true TW201714318A (en) 2017-04-16
TWI596785B TWI596785B (en) 2017-08-21

Family

ID=58532572

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105131556A TWI596785B (en) 2015-10-07 2016-09-30 Solar cell structure and method for manufacturing the same

Country Status (2)

Country Link
CN (1) CN106571404A (en)
TW (1) TWI596785B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201914044A (en) * 2017-09-01 2019-04-01 財團法人工業技術研究院 Solar cell and method of manufacturing same
CN111430483A (en) * 2020-03-23 2020-07-17 深圳先进技术研究院 Photoelectric detector, manufacturing method thereof and photoelectric detection system
CN115084286B (en) * 2022-07-22 2022-11-18 山东腾晖新能源技术有限公司 Photovoltaic cell front passivation contact structure and application

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023020A (en) * 1996-10-15 2000-02-08 Matsushita Electric Industrial Co., Ltd. Solar cell and method for manufacturing the same
TWI497729B (en) * 2009-02-05 2015-08-21 Tsmc Solar Ltd Solar cell sputtering device
US8709856B2 (en) * 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
TW201119074A (en) * 2009-11-18 2011-06-01 Nexpower Technology Corp Thin film solar cell and manufacturing method thereof
CN102714228A (en) * 2010-01-18 2012-10-03 应用材料公司 Manufacture of thin film solar cells with high conversion efficiency
WO2012037382A2 (en) * 2010-09-15 2012-03-22 Precursor Energetics, Inc. Deposition processes and devices for photovoltaics
CN103715283B (en) * 2012-10-09 2016-05-04 浙江尚颉光电科技有限公司 A kind of solar cell and preparation method thereof
CN202855752U (en) * 2012-11-07 2013-04-03 厦门神科太阳能有限公司 CIGS based thin film solar cell
CN104022225B (en) * 2014-06-20 2016-10-05 苏州柯利达集团有限公司 High efficiency, low cost CIGS prepared by a kind of whole soln method/perovskite double-junction solar light cell
CN104362186B (en) * 2014-10-21 2016-10-05 苏州柯利达集团有限公司 One is applied to efficient film photronic double-decker Window layer

Also Published As

Publication number Publication date
TWI596785B (en) 2017-08-21
CN106571404A (en) 2017-04-19

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