JP2015508233A - 裏面照射型センサを作製するための方法 - Google Patents

裏面照射型センサを作製するための方法 Download PDF

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Publication number
JP2015508233A
JP2015508233A JP2014556595A JP2014556595A JP2015508233A JP 2015508233 A JP2015508233 A JP 2015508233A JP 2014556595 A JP2014556595 A JP 2014556595A JP 2014556595 A JP2014556595 A JP 2014556595A JP 2015508233 A JP2015508233 A JP 2015508233A
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semiconductor
flake
thickness
doped region
donor body
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JP2014556595A
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English (en)
Japanese (ja)
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JP2015508233A5 (enExample
Inventor
ムラリ，ベンカテサン
チャリ，アルビンド
プラブ，ゴパル
ペッティ，クリストファー・ジェイ
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GT SOLAR INCORPORATED
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GT SOLAR INCORPORATED
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Publication of JP2015508233A publication Critical patent/JP2015508233A/ja
Publication of JP2015508233A5 publication Critical patent/JP2015508233A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014556595A 2012-02-08 2013-02-05 裏面照射型センサを作製するための方法 Pending JP2015508233A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261596694P 2012-02-08 2012-02-08
US61/596,694 2012-02-08
US13/425,877 US8871608B2 (en) 2012-02-08 2012-03-21 Method for fabricating backside-illuminated sensors
US13/425,877 2012-03-21
PCT/US2013/024684 WO2013119513A1 (en) 2012-02-08 2013-02-05 Method for fabricating backside-illuminated sensors

Publications (2)

Publication Number Publication Date
JP2015508233A true JP2015508233A (ja) 2015-03-16
JP2015508233A5 JP2015508233A5 (enExample) 2016-03-10

Family

ID=48903240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014556595A Pending JP2015508233A (ja) 2012-02-08 2013-02-05 裏面照射型センサを作製するための方法

Country Status (5)

Country Link
US (1) US8871608B2 (enExample)
EP (1) EP2812920A4 (enExample)
JP (1) JP2015508233A (enExample)
KR (1) KR20140135184A (enExample)
WO (1) WO2013119513A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020136645A (ja) * 2019-02-26 2020-08-31 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3009428B1 (fr) * 2013-08-05 2015-08-07 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
JP2010219439A (ja) * 2009-03-18 2010-09-30 Panasonic Corp 固体撮像装置及びその製造方法
JP2011522421A (ja) * 2008-05-28 2011-07-28 サーノフ コーポレーション 極薄シリコン・オン・インシュレータ基板を使用した背面照射型撮像装置

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US4162505A (en) 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
JP4450126B2 (ja) 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7615808B2 (en) 2004-09-17 2009-11-10 California Institute Of Technology Structure for implementation of back-illuminated CMOS or CCD imagers
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
CN106409970A (zh) 2005-12-21 2017-02-15 太阳能公司 背面触点太阳能电池及制造方法
US20070169808A1 (en) 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US20070277874A1 (en) 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US20080092944A1 (en) 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
JP5166745B2 (ja) 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
US8338209B2 (en) 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
JP4799594B2 (ja) * 2008-08-19 2011-10-26 株式会社東芝 固体撮像装置およびその製造方法
US20100139755A1 (en) 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

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Publication number Priority date Publication date Assignee Title
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
JP2011522421A (ja) * 2008-05-28 2011-07-28 サーノフ コーポレーション 極薄シリコン・オン・インシュレータ基板を使用した背面照射型撮像装置
JP2010219439A (ja) * 2009-03-18 2010-09-30 Panasonic Corp 固体撮像装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020136645A (ja) * 2019-02-26 2020-08-31 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置
WO2020175483A1 (ja) * 2019-02-26 2020-09-03 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置
JP7364343B2 (ja) 2019-02-26 2023-10-18 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置
JP2023181216A (ja) * 2019-02-26 2023-12-21 浜松ホトニクス株式会社 光検出装置の製造方法
JP7692975B2 (ja) 2019-02-26 2025-06-16 浜松ホトニクス株式会社 光検出装置の製造方法

Also Published As

Publication number Publication date
US20130203205A1 (en) 2013-08-08
WO2013119513A1 (en) 2013-08-15
EP2812920A1 (en) 2014-12-17
US8871608B2 (en) 2014-10-28
EP2812920A4 (en) 2015-10-07
KR20140135184A (ko) 2014-11-25

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