JP2015508233A5 - - Google Patents

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Publication number
JP2015508233A5
JP2015508233A5 JP2014556595A JP2014556595A JP2015508233A5 JP 2015508233 A5 JP2015508233 A5 JP 2015508233A5 JP 2014556595 A JP2014556595 A JP 2014556595A JP 2014556595 A JP2014556595 A JP 2014556595A JP 2015508233 A5 JP2015508233 A5 JP 2015508233A5
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JP
Japan
Prior art keywords
semiconductor
flake
doped region
forming
illuminated sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014556595A
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English (en)
Japanese (ja)
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JP2015508233A (ja
Filing date
Publication date
Priority claimed from US13/425,877 external-priority patent/US8871608B2/en
Application filed filed Critical
Publication of JP2015508233A publication Critical patent/JP2015508233A/ja
Publication of JP2015508233A5 publication Critical patent/JP2015508233A5/ja
Pending legal-status Critical Current

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JP2014556595A 2012-02-08 2013-02-05 裏面照射型センサを作製するための方法 Pending JP2015508233A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261596694P 2012-02-08 2012-02-08
US61/596,694 2012-02-08
US13/425,877 US8871608B2 (en) 2012-02-08 2012-03-21 Method for fabricating backside-illuminated sensors
US13/425,877 2012-03-21
PCT/US2013/024684 WO2013119513A1 (en) 2012-02-08 2013-02-05 Method for fabricating backside-illuminated sensors

Publications (2)

Publication Number Publication Date
JP2015508233A JP2015508233A (ja) 2015-03-16
JP2015508233A5 true JP2015508233A5 (enExample) 2016-03-10

Family

ID=48903240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014556595A Pending JP2015508233A (ja) 2012-02-08 2013-02-05 裏面照射型センサを作製するための方法

Country Status (5)

Country Link
US (1) US8871608B2 (enExample)
EP (1) EP2812920A4 (enExample)
JP (1) JP2015508233A (enExample)
KR (1) KR20140135184A (enExample)
WO (1) WO2013119513A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3009428B1 (fr) * 2013-08-05 2015-08-07 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques
JP7364343B2 (ja) * 2019-02-26 2023-10-18 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162505A (en) 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
JP4450126B2 (ja) 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7615808B2 (en) 2004-09-17 2009-11-10 California Institute Of Technology Structure for implementation of back-illuminated CMOS or CCD imagers
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
CN106409970A (zh) 2005-12-21 2017-02-15 太阳能公司 背面触点太阳能电池及制造方法
US20070169808A1 (en) 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US20070277874A1 (en) 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US20080092944A1 (en) 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
JP5166745B2 (ja) 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
WO2009154982A1 (en) * 2008-05-28 2009-12-23 Sarnoff Corporation Back-illuminated imager using ultra-thin silicon on insulator substrates
US8338209B2 (en) 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
JP4799594B2 (ja) * 2008-08-19 2011-10-26 株式会社東芝 固体撮像装置およびその製造方法
US20100139755A1 (en) 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
JP5356872B2 (ja) * 2009-03-18 2013-12-04 パナソニック株式会社 個体撮像装置の製造方法
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

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