JP2015228404A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP2015228404A JP2015228404A JP2014113029A JP2014113029A JP2015228404A JP 2015228404 A JP2015228404 A JP 2015228404A JP 2014113029 A JP2014113029 A JP 2014113029A JP 2014113029 A JP2014113029 A JP 2014113029A JP 2015228404 A JP2015228404 A JP 2015228404A
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 41
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- 239000007789 gas Substances 0.000 claims description 163
- 238000004891 communication Methods 0.000 claims description 47
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- 230000015572 biosynthetic process Effects 0.000 description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
【解決手段】回転テーブル2の表面に形成された凹部24内に、凹部24よりも平面形状が小さい載置部25を設けると共に、凹部24内における前記載置部25の周囲の空間(溝部26)と回転テーブル2の外側の空間とを連通するように、凹部24の壁部に連通路をなすスリット27を形成する。回転テーブル2の回転による遠心力により、ウエハWの外端縁が凹部24の内壁面に接触し、溝部26の上方側がウエハWで塞がれて、凹部24内には回転テーブル2の外周側にガスが寄った状態になる。このガスはスリット27を介して回転テーブル2の外側の空間に排出されるので、凹部24内のガスが回転テーブル2の表面に巻き上がってウエハに付着することが抑えられ、膜厚の面内均一性が改善される。
【選択図】図6
Description
前記回転テーブルの一面側に、前記基板が収まるように形成された凹部と、
この凹部内にて基板の周縁部よりも中央寄りの部位を支持するための載置部と、
前記回転テーブルの回転による遠心力により前記凹部内にて前記回転テーブルの外周側に寄ったガスを排出するために、凹部の中央から見て前記回転テーブルの中心とは反対側の凹部の端部領域において、前記凹部内における載置部の周囲の空間と前記回転テーブルの外側の空間とを連通するように当該凹部の壁部に形成された連通路と、
前記真空容器内を真空排気するための排気口と、を備えたことを特徴とする。
本発明の第1の実施の形態の成膜装置について図面を参照して説明する。この成膜装置は、図1〜図4に示すように、平面形状が概ね円形である真空容器1と、この真空容器1内に設けられ、当該真空容器1の中心に回転中心を有すると共に例えば石英により構成された回転テーブル2と、を備えており、ウエハWに対して成膜処理を行う成膜装置として構成されている。
真空容器1は、天板11及び容器本体12を備えており、天板11が容器本体12から着脱できるように構成されている。天板11の上面側における中央部には、真空容器1内の中心部領域Cにおいて互いに異なる処理ガス同士が混ざり合うことを抑制するために、窒素(N2)ガスを分離ガスとして供給するための分離ガス供給管51が接続されている。
続いて本発明の他の実施の形態について図16及び図17を用いて説明する。この実施の形態が第1の実施の形態と異なる点は、幅狭な複数本のスリットに代えて、回転テーブル2の凹部24の中央から見て回転テーブル2の中心O1とは反対側の凹部24の端部領域に、幅の大きい切欠部28よりなる連通路を形成したことである。この切欠部28は、凹部24の溝部26と、回転テーブル2の外周側の表面側及び側方側の空間とを連通するように凹部24の壁部に形成されている。その他の構成は上述の第1の実施の形態と同様である。この構成においても、凹部24内において回転テーブル2の外周側に寄ったガスが切欠部28を介して回転テーブル2の外方に排出されるため、前記隙間c2から回転テーブル2の表面側へのガスの流出が抑えられ、結果として良好な膜厚の面内均一性を確保することができる。
続いて本発明の他の実施の形態について図21を用いて説明する。この実施の形態が第1の実施の形態と異なる点は、連通路29を凹部24の側壁部に設ける代わりに、凹部24の底部に形成したことである。この連通路29は、回転テーブル2の凹部24の中央から見て回転テーブル2の中心O1とは反対側の凹部24の端部領域における、凹部24の溝部26の底部261に形成されている。連通路29は、前記溝部26と、回転テーブル2の外周側近傍の下方側空間とを連通するように形成されている。連通路29を凹部24の側壁部241ではなく、底部261に設けた点以外の構成は第1の実施の形態と同様である。
また図22に示すように、第1の実施の形態の排気口61、62に加えて、さらに回転テーブル2の下方側における、連通路29の通過領域の近傍に排気口60を設けて、連通路29からガスを排出させるようにしてもよい。図22中631は排気管、651は圧力調整部、641は真空ポンプである。
(表1)
従って、プラズマ発生用ガスについても、反応生成物の種別に応じて適宜変更しても良い。
既述の図1の成膜装置を用いて、6枚のモニタウエハ1〜6に対して、上述の成膜処理を行い、エリプソメータを用いて膜厚を測定した。成膜処理の条件は、ウエハ温度が620℃、処理圧力は1.26kPa(9.5Torr)、回転テーブル2の回転速度が180rpmとした(実施例1)。この結果を図25に示す。図中縦軸は膜厚、横軸はウエハ直径上の位置であり、0mmは回転テーブル2の中心O1側の位置、300mmは回転テーブル2の外周側の位置を夫々示す。この例では300mmの位置にノッチNが形成されている。実際には6枚のウエハについて膜厚を測定したが、その内の最も膜厚の面内均一性が良好なウエハ6について○で、最も面内均一性が不良なウエハ4について△で、これらの間の面内均一性を備えるウエハ5については□でプロットしている。
これら図25及び図26より、比較例1の成膜装置では、300mmの位置において局所的に急激に膜厚が大きくなること、実施例1の成膜装置においても300mmの位置において膜厚の増加が認められるウエハもあるが、増加量は比較例に比べてかなり小さいことが認められた。これにより、本発明のように凹部24に連通路を設けて、凹部24内のガスを回転テーブル2の外方に排出することによって、膜厚の面内均一性が改善されることが理解される。
実施例1と同じ装置及びプロセス条件でモニタウエハに対して成膜処理を行い、ウエハの面内の49カ所の測定ポイントについて膜厚を測定した(実施例2)。その結果について図27に□のプロットで示す。図中縦軸は膜厚、横軸はウエハ上の位置である。前記49カ所の測定ポイントは、ウエハの中心を中心とし、半径が50mmずつ大きくなる複数の同心円を描いたときに、夫々の同心円上の複数個所とした。位置P1はウエハの中心、位置P38はウエハWの回転テーブル2の外周に最も近い位置であり、ノッチNが形成されている位置である。同様に比較例1と同じ装置及びプロセス条件でモニタウエハに対して成膜処理を行った場合(比較例2)についても、同じ測定ポイントで膜厚の測定を行った。この結果について、図27に◇のプロットで示す。
実施例1と同じ装置及びプロセス条件にて成膜処理を行った6枚のモニタウエハについて、膜厚の面内均一性を測定した(実施例3)。この面内均一性は、実施例2と同様にウエハ面内の49カ所の測定ポイントの膜厚を測定し、次の(1)式により求めている。
{(最大膜厚−最小膜厚)/(平均膜厚×2)}×100・・・(1)
この結果を図28に□のプロットにて示す。図中縦軸は面内均一性、横軸は6枚のウエハであり、夫々に1〜6と符号を付している。同様に比較例1と同じ装置及びプロセス条件で6枚のモニタウエハに対して成膜処理を行った場合(比較例3)についても、面内均一性の測定を行った。この結果について、図28に◇のプロットで示す。
この図28により、連通路が設けられた成膜装置にて成膜したウエハについては、連通路が形成されていない成膜装置にて成膜したウエハよりも格段に面内均一性が改善されることが認められた。
既述の図1の成膜装置を用いて、6枚のモニタウエハ1〜6に対して、プロセス条件を変えて成膜処理を行い、実施例3と同様に面内均一性を測定した(実施例4)。このときのプロセス条件は、ウエハ温度が620℃、処理圧力は0.89kPa(6.7Torr)、回転テーブル2の回転速度が120rpmとした。この結果を図29に□でプロットにて示す。図中縦軸は面内均一性、横軸は6枚のウエハである。また同様に、比較例1と同じ装置にて、実施例4と同じプロセス条件で6枚のモニタウエハに対して成膜処理を行った場合(比較例4)についても、面内均一性の測定を行った。この結果について、図29に◇のプロットで示す。
この図29により、処理圧力が0.89kPa、回転テーブル2の回転速度が120rpmである場合には、連通路の有無に関わらず、面内均一性がほぼ同じであることが認められた。従って、本発明の成膜装置によれば、処理圧力の高低や、回転テーブル2の回転速度の大小に関わらず、良好な膜厚の面内均一性が得られることが確認された。これにより本発明の成膜装置を用いることにより、実施可能なプロセスが多くなり、装置の汎用性が高いことが理解される。
1 真空容器
2 回転テーブル
24 凹部
25 載置部
26 溝部
27 スリット(連通路)
31、32 処理ガスノズル
61、62 排気口
Claims (7)
- 真空容器内にて回転テーブルを回転させて回転テーブル上の基板を、原料ガスの供給領域、原料と反応する反応ガスの供給領域、を順次通過させることにより基板上に成膜する装置において、
前記回転テーブルの一面側に、前記基板が収まるように形成された凹部と、
この凹部内にて基板の周縁部よりも中央寄りの部位を支持するための載置部と、
前記回転テーブルの回転による遠心力により前記凹部内にて前記回転テーブルの外周側に寄ったガスを排出するために、凹部の中央から見て前記回転テーブルの中心とは反対側の凹部の端部領域において、前記凹部内における載置部の周囲の空間と前記回転テーブルの外側の空間とを連通するように当該凹部の壁部に形成された連通路と、
前記真空容器内を真空排気するための排気口と、を備えたことを特徴とする成膜装置。 - 前記凹部は、平面形状が円形であることを特徴とする請求項1記載の成膜装置。
- 前記凹部の端部領域は、凹部の中心と回転テーブルの回転中心とを結ぶ直線が回転テーブルの外周と交わる点をPとすると、凹部の中心から点Pに対して左右に30度ずつの開き角を各々形成する直線の間の領域であることを特徴とする請求項1又は2記載の成膜装置。
- 前記回転テーブルの回転時に遠心力により基板が前記回転テーブルの外周側に寄って凹部の側壁に接触した状態になることを特徴とする請求項1ないし3のいずれか一項に記載の成膜装置。
- 前記連通路は、前記凹部の側壁に形成され、
前記排気口は、平面的に見て前記回転テーブルの外周よりも外側位置にて真空容器内に開口していることを特徴とする請求項1ないし4のいずれか一項に記載の成膜装置。 - 前記排気口は、反応ガスの供給領域においては、回転テーブルの回転方向の下流側に向かって排気流が形成される位置に設けられ、
前記連通路は、凹部の中心と回転テーブルの回転中心とを結ぶ直線から見て、回転テーブルの回転方向の上流側に配置されていることを特徴とする請求項1ないし5のいずれか一項に記載の成膜装置。 - 前記連通路は、前記凹部の側壁に、周方向に互いに間隔を開けて複数本形成されていることを特徴とする請求項1ないし6のいずれか一項に記載の成膜装置。
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