JP2015220069A - 表示装置 - Google Patents
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- JP2015220069A JP2015220069A JP2014102194A JP2014102194A JP2015220069A JP 2015220069 A JP2015220069 A JP 2015220069A JP 2014102194 A JP2014102194 A JP 2014102194A JP 2014102194 A JP2014102194 A JP 2014102194A JP 2015220069 A JP2015220069 A JP 2015220069A
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- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
Description
本発明の第1の実施形態に係る表示装置100に含まれる画素10の構成について、図2乃至図4を参照して説明する。図2は、本発明の第1の実施形態に係る表示装置100における画素10の概略構成を示す断面図である。図3は、図2に示す表示装置100における画素10の概略構成を説明するための平面図である。図4は、本発明の第1の実施形態に係る表示装置100に用いられる画素回路の一例を示す回路図である。なお、以下では、表示装置100において、表示領域9が配置されて画像が視認される側を上側として説明する。
図7(a)乃至(e)は、本発明の一実施形態に係る表示装置100の画素10における製造工程を示す断面図である。図7(a)乃至(e)に示す断面構成は、図3に示すB−B´線の断面構成に対応する。ここで、図7(a)乃至(e)は、一つの画素10に対応する断面構成を示すものである。従って、実際の製造工程においては、一つの製造用基板上に、複数台分の表示装置100に対応する構成がそれぞれ複数の画素10の構成を含んで形成され、最終的に個々の表示装置100が個片化されて取り出されることにより表示装置100が形成されてもよい。
以下、図8乃至図11を参照し、本発明の第2の実施形態に係る表示装置100の構成について説明する。
以下、図12乃至図16を参照し、本発明の第3の実施形態に係る表示装置100の構成について説明する。
10 画素
101 TFT基板
102 第1絶縁層
103 第2絶縁層
103a 開口部
104 第1電極
104b 斜面
105 色変換層
106 量子ドットを含む発光層
107 第2電極
108 封止膜
109 発光ダイオード
110 第3絶縁層
111 カラーフィルタ
Claims (10)
- 第1基板の第1面上に、第1絶縁層と、前記第1絶縁層の一部を開口する複数の開口部を有する第2絶縁層と、前記複数の開口部にそれぞれ配置される複数の発光素子と、を備える表示装置であって、
前記発光素子は、前記開口部内の前記第1絶縁層上から前記第2絶縁層上に配置されて前記第2絶縁層の側面上に斜面を有する第1電極と、前記開口部内の前記第1電極上に配置されて前記第1電極の前記斜面と対向して配置される側面を有する量子ドットを含む発光層と、前記発光層上に配置される第2電極とを含むことを特徴とする表示装置。 - 前記発光素子は、前記開口部内の前記第1電極上に前記発光層の側面に隣接して配置される色変換層をさらに備えることを特徴とする請求項1に記載の表示装置。
- 前記発光素子は、前記開口部内の前記第1電極上に前記発光層の側面に隣接して配置され、前記第2電極下に配置される発光ダイオードをさらに備えることを特徴とする請求項1または2に記載の表示装置。
- 前記開口部は、前記第1絶縁層に向かって先細りとなるテーパー形状を有することを特徴とする請求項1乃至3の何れか一項に記載の表示装置。
- 前記第1基板の前記第1面上に、前記第1基板に対向して接合される第2基板をさらに備え、
前記第1電極は、前記発光層から放出された光を前記第2基板に向かって反射させる反射電極であることを特徴とする請求項1乃至4の何れか一項に記載の表示装置。 - 前記発光素子は、前記開口部内の前記第1電極上に前記発光層の側面に隣接して配置されるカラーフィルタをさらに備えることを特徴とする請求項1に記載の表示装置。
- 前記複数の発光素子に対応してそれぞれ配置される複数の画素をさらに備え、
前記第2電極は、前記画素ごとに配置されるミラー電極であることを特徴とする請求項1乃至6の何れか一項に記載の表示装置。 - 前記複数の発光素子に対応してそれぞれ配置される複数の画素をさらに備え、
前記第2電極は、前記複数の画素に共通して配置される透明電極であることを特徴とする請求項1乃至6の何れか一項に記載の表示装置。 - 前記第2絶縁層上の前記第1電極の端部上に配置される第3絶縁層をさらに備えることを特徴とする請求項8に記載の表示装置。
- 前記第2電極が、前記第3絶縁層上に配置されることを特徴とする請求項9に記載の表示装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014102194A JP6357349B2 (ja) | 2014-05-16 | 2014-05-16 | 表示装置 |
KR1020150060454A KR101731164B1 (ko) | 2014-05-16 | 2015-04-29 | 표시 장치 |
CN201510214258.6A CN105097870B (zh) | 2014-05-16 | 2015-04-29 | 显示装置 |
US14/708,869 US9515285B2 (en) | 2014-05-16 | 2015-05-11 | Display device including a light emitting layer containing quantum dots |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014102194A JP6357349B2 (ja) | 2014-05-16 | 2014-05-16 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015220069A true JP2015220069A (ja) | 2015-12-07 |
JP2015220069A5 JP2015220069A5 (ja) | 2017-04-20 |
JP6357349B2 JP6357349B2 (ja) | 2018-07-11 |
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US20150333102A1 (en) | 2015-11-19 |
CN105097870A (zh) | 2015-11-25 |
KR101731164B1 (ko) | 2017-04-27 |
KR20150131962A (ko) | 2015-11-25 |
CN105097870B (zh) | 2018-05-29 |
US9515285B2 (en) | 2016-12-06 |
JP6357349B2 (ja) | 2018-07-11 |
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