JP2015216352A5 - - Google Patents
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- JP2015216352A5 JP2015216352A5 JP2015017909A JP2015017909A JP2015216352A5 JP 2015216352 A5 JP2015216352 A5 JP 2015216352A5 JP 2015017909 A JP2015017909 A JP 2015017909A JP 2015017909 A JP2015017909 A JP 2015017909A JP 2015216352 A5 JP2015216352 A5 JP 2015216352A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ultraviolet light
- emitting diode
- diode according
- type contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000003780 insertion Methods 0.000 claims description 16
- 230000037431 insertion Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 230000006798 recombination Effects 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 44
- 230000005855 radiation Effects 0.000 claims 8
- 239000013078 crystal Substances 0.000 claims 6
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015017909A JP2015216352A (ja) | 2014-04-24 | 2015-01-30 | 紫外発光ダイオードおよびそれを備える電気機器 |
| US14/695,786 US9153741B1 (en) | 2014-04-24 | 2015-04-24 | Ultraviolet light-emitting diode and electric apparatus having the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014090632 | 2014-04-24 | ||
| JP2014090632 | 2014-04-24 | ||
| JP2015017909A JP2015216352A (ja) | 2014-04-24 | 2015-01-30 | 紫外発光ダイオードおよびそれを備える電気機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020001679A Division JP7100903B2 (ja) | 2014-04-24 | 2020-01-08 | 紫外発光ダイオードおよびそれを備える電気機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015216352A JP2015216352A (ja) | 2015-12-03 |
| JP2015216352A5 true JP2015216352A5 (https=) | 2018-02-22 |
Family
ID=54203897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015017909A Pending JP2015216352A (ja) | 2014-04-24 | 2015-01-30 | 紫外発光ダイオードおよびそれを備える電気機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9153741B1 (https=) |
| JP (1) | JP2015216352A (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108352425B (zh) * | 2015-10-15 | 2022-02-11 | 苏州乐琻半导体有限公司 | 半导体器件、半导体器件封装和包括其的照明系统 |
| JP6902255B2 (ja) * | 2016-02-01 | 2021-07-14 | 国立研究開発法人理化学研究所 | 紫外線発光素子 |
| US10340416B2 (en) * | 2016-02-26 | 2019-07-02 | Riken | Crystal substrate, ultraviolet light-emitting device, and manufacturing methods therefor |
| JP6966063B2 (ja) * | 2016-02-26 | 2021-11-10 | 国立研究開発法人理化学研究所 | 結晶基板、紫外発光素子およびそれらの製造方法 |
| JP6553541B2 (ja) * | 2016-05-11 | 2019-07-31 | 日機装株式会社 | 深紫外発光素子 |
| WO2017222279A1 (ko) | 2016-06-20 | 2017-12-28 | 엘지이노텍 주식회사 | 반도체 소자 |
| US10340415B2 (en) | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
| KR102524303B1 (ko) | 2016-09-10 | 2023-04-24 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| CN115763652B (zh) | 2016-09-13 | 2025-07-04 | 苏州立琻半导体有限公司 | 半导体器件和包括该半导体器件的半导体器件封装 |
| US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
| US11201261B2 (en) | 2017-02-17 | 2021-12-14 | Dowa Electronics Materials Co., Ltd. | Deep ultraviolet light emitting element and method of manufacturing the same |
| WO2018181044A1 (ja) * | 2017-03-27 | 2018-10-04 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP6438542B1 (ja) | 2017-07-27 | 2018-12-12 | 日機装株式会社 | 半導体発光素子 |
| KR102390828B1 (ko) | 2017-08-14 | 2022-04-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| JP6849641B2 (ja) | 2017-10-02 | 2021-03-24 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子およびその製造方法 |
| US10672960B2 (en) | 2017-10-19 | 2020-06-02 | Lumileds Llc | Light emitting device package with a coating layer |
| CN108011002B (zh) * | 2017-11-30 | 2019-06-11 | 广东省半导体产业技术研究院 | 一种紫外led芯片制作方法 |
| JP6727185B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体発光素子 |
| US11309454B2 (en) * | 2018-01-26 | 2022-04-19 | Marubun Corporation | Deep ultraviolet LED and method for producing the same |
| US12402448B2 (en) | 2019-01-22 | 2025-08-26 | Dowa Electronics Materials Co., Ltd. | Method of producing reflective electrode for deep ultraviolet light-emitting element, method of producing deep ultraviolet light-emitting element, and deep ultraviolet light-emitting element |
| JP6780083B1 (ja) | 2019-06-11 | 2020-11-04 | 日機装株式会社 | 半導体発光素子 |
| KR20220097402A (ko) * | 2019-11-08 | 2022-07-07 | 이데미쓰 고산 가부시키가이샤 | 적층체 및 반도체 장치 |
| JP7570424B2 (ja) * | 2020-09-17 | 2024-10-21 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| CN112186085B (zh) * | 2020-10-09 | 2022-01-04 | 河北工业大学 | 一种边缘无pGaN的深紫外半导体发光二极管及其制备方法 |
| KR20220053712A (ko) * | 2020-10-22 | 2022-05-02 | (주)아덴하이진 | Uv-c led를 이용한 실내 표면 및 공기 살균 정화 장치 |
| KR102427239B1 (ko) * | 2020-10-22 | 2022-08-22 | (주)아덴하이진 | 인체무해 uv광원을 이용한 살균장치 |
| JP7816107B2 (ja) * | 2022-12-05 | 2026-02-18 | 豊田合成株式会社 | 発光素子の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW425722B (en) * | 1995-11-27 | 2001-03-11 | Sumitomo Chemical Co | Group III-V compound semiconductor and light-emitting device |
| US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| US6836498B2 (en) * | 2000-06-05 | 2004-12-28 | Sony Corporation | Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof |
| JP4993435B2 (ja) * | 2006-03-14 | 2012-08-08 | スタンレー電気株式会社 | 窒化物半導体発光素子の製造方法 |
| JP4538476B2 (ja) | 2007-08-27 | 2010-09-08 | 独立行政法人理化学研究所 | 半導体構造の形成方法 |
| DE102009034359A1 (de) * | 2009-07-17 | 2011-02-17 | Forschungsverbund Berlin E.V. | P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich |
| TWI556468B (zh) | 2009-09-07 | 2016-11-01 | 松下電器產業股份有限公司 | Nitride semiconductor multilayer structure and manufacturing method thereof, nitride semiconductor light emitting element |
| US8759813B2 (en) | 2010-02-24 | 2014-06-24 | Riken | Light-emitting element having nitride semiconductor multiquantum barrier, and process for production thereof |
| US9142741B2 (en) * | 2011-06-15 | 2015-09-22 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
| JP5514920B2 (ja) * | 2012-01-13 | 2014-06-04 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子 |
| JP5774650B2 (ja) * | 2013-08-13 | 2015-09-09 | 株式会社東芝 | 半導体発光素子 |
-
2015
- 2015-01-30 JP JP2015017909A patent/JP2015216352A/ja active Pending
- 2015-04-24 US US14/695,786 patent/US9153741B1/en active Active
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