JP2015211044A - 貼り合わせ用InGaSb積層構造基板 - Google Patents
貼り合わせ用InGaSb積層構造基板 Download PDFInfo
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- JP2015211044A JP2015211044A JP2014089396A JP2014089396A JP2015211044A JP 2015211044 A JP2015211044 A JP 2015211044A JP 2014089396 A JP2014089396 A JP 2014089396A JP 2014089396 A JP2014089396 A JP 2014089396A JP 2015211044 A JP2015211044 A JP 2015211044A
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Δa⊥ = 4(ΔrGaCGa+ΔrAsCAs)/(√3x2.22x1022) (1)
ここで、ΔrGaとΔrAsは、炭素とGaの共有半径差、炭素とAsの共有半径差であり、CGaとCAsはGaサイトとAsサイトの炭素濃度である。
hc = b(1-νcos2α)/2πf(1+ν)cosλ・(In(hc/b)+1) (2)
102 高濃度炭素ドープAlSb層
103 InGaSb層
201 Si基板
202 Al2O3
Claims (4)
- GaSb基板と、
前記GaSb基板上に形成された炭素ドープAlSb層と、
前記炭素ドープAlSb層上に形成されたInGaSb結晶層と
を有することを特徴とする貼り合わせ用InGaSb積層構造基板。 - 前記炭素ドープAlSb層の炭素ドーピング濃度が2.2×1020/cm3以上7.4×1020/cm3以下であることを特徴とする請求項1に記載の貼り合わせ用InGaSb積層構造基板。
- 前記InGaSb結晶層のIn組成が0以上0.3以下であることを特徴とする請求項1または2に記載の貼り合わせ用InGaSb積層構造基板。
- 炭素ドープAlSb層の厚さが100nm以上500nm以下であることを特徴とする請求項1乃至3のいずれかに記載の貼り合わせ用InGaSb積層構造基板。
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Cited By (1)
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US11450547B2 (en) | 2020-09-16 | 2022-09-20 | Kioxia Corporation | Method for manufacturing semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120061728A1 (en) * | 2010-07-02 | 2012-03-15 | The Regents Of The University Of California | Semiconductor on insulator (xoi) for high performance field effect transistors |
JP2013219242A (ja) * | 2012-04-10 | 2013-10-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体薄膜およびその製造方法 |
JP2014003106A (ja) * | 2012-06-15 | 2014-01-09 | Sumitomo Chemical Co Ltd | 複合基板および複合基板の製造方法 |
JP2014003104A (ja) * | 2012-06-15 | 2014-01-09 | Sumitomo Chemical Co Ltd | 複合基板の製造方法および複合基板 |
US20150155165A1 (en) * | 2012-06-15 | 2015-06-04 | Sumitomo Chemical Company, Limited | Method of producing composite wafer and composite wafer |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120061728A1 (en) * | 2010-07-02 | 2012-03-15 | The Regents Of The University Of California | Semiconductor on insulator (xoi) for high performance field effect transistors |
JP2013219242A (ja) * | 2012-04-10 | 2013-10-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体薄膜およびその製造方法 |
JP2014003106A (ja) * | 2012-06-15 | 2014-01-09 | Sumitomo Chemical Co Ltd | 複合基板および複合基板の製造方法 |
JP2014003104A (ja) * | 2012-06-15 | 2014-01-09 | Sumitomo Chemical Co Ltd | 複合基板の製造方法および複合基板 |
US20150155165A1 (en) * | 2012-06-15 | 2015-06-04 | Sumitomo Chemical Company, Limited | Method of producing composite wafer and composite wafer |
Non-Patent Citations (1)
Title |
---|
星拓也 他: "19a-TW-6 InP基板上CドープInxGa1−xAs1−ySby のMOCVD成長 Carbon-doped InxGa1", 2010年春季第57回応用物理学関係連合講演会講演予稿集, JPN6015022352, 3 March 2010 (2010-03-03), JP, pages 15 - 099, ISSN: 0003560482 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11450547B2 (en) | 2020-09-16 | 2022-09-20 | Kioxia Corporation | Method for manufacturing semiconductor device |
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