JP2015179783A - 半導体レーザ装置 - Google Patents
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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Abstract
【解決手段】実施形態の半導体レーザ装置は、レーザ光を発する活性層を含み第1のメサ構造を有する化合物半導体層と、第1のメサ構造の伸長方向に伸びる1本の主回折格子と、主回折格子の両側に配置される2本の副回折格子とを含み、化合物半導体層側の表面に設けられる回折格子を有し、化合物半導体層と積層されるシリコン層と、を備える。
【選択図】図1
Description
本実施形態の半導体レーザ装置は、レーザ光を発する活性層を含み第1のメサ構造を有する化合物半導体層を備える。また、化合物半導体層側の表面に形成される回折格子を有し、化合物半導体層と積層されるシリコン層を備える。回折格子は、第1のメサ構造の伸長方向に伸びる1本の主回折格子と、主回折格子の両側に形成される2本の副回折格子とを含む。
本実施形態の半導体レーザ装置は、化合物半導体層とシリコン層との間に、厚さ100nm以下の絶縁層を、さらに備えること以外は第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体レーザ装置は、シリコン層が第2のメサ構造を備える点、および、化合物半導体層の第1のメサ構造の一部が半絶縁化されている点で第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体レーザ装置は、化合物半導体層とシリコン層との間に、厚さ100nm以下の絶縁層を、さらに備えること以外は第3の実施形態と同様である。したがって、第3の実施形態と重複する内容については記述を省略する。
本実施形態の半導体レーザ装置は、第1〜第4の半導体レーザ装置が、活性層がn型半導体層とp型半導体層の間に挟まれているバンド間発光型の半導体レーザであったのに対し、サブバンド間遷移で発光する量子カスケードレーザ(QCL:quantum cascade laser)である点で、異なっている。
3a Siリブ導波路(第2のメサ構造)
4 SiO2層(絶縁層)
12 活性層/導波層(活性層)
15 メサ(第1のメサ構造)
21 回折格子
21a 主回折格子
21b 副回折格子
22 位相シフタ
Claims (14)
- レーザ光を発する活性層を含み第1のメサ構造を有する化合物半導体層と、
前記第1のメサ構造の伸長方向に伸びる1本の主回折格子と、前記主回折格子の両側に配置される2本の副回折格子とを含み、前記化合物半導体層側の表面に設けられる回折格子を有し、前記化合物半導体層と積層されるシリコン層と、
を備える半導体レーザ装置。 - 前記主回折格子が前記レーザ光の1次の高次モードの節を含む位置に配置され、前記副回折格子が前記レーザ光の2次の高次モードの節を含む位置に配置されることを特徴とする請求項1記載の半導体レーザ装置。
- 前記副回折格子は、前記主回折格子と周期、および位相が一致するように配置されることを特徴とする請求項1または請求項2記載の半導体レーザ装置。
- 前記回折格子の中央部に、位相シフタが設けられることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体レーザ装置。
- 前記回折格子の基本(0次)モードに対する結合係数κと、前記回折格子の前記第1のメサ構造の伸長方向の長さで規定される共振器長Lとの積κLが1以上1.5以下であることを特徴とする請求項4記載の半導体レーザ装置。
- 前記主回折格子の幅が、前記第1のメサ構造の前記シリコン層側の幅の10%以下であることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体レーザ装置。
- 前記シリコン層が第2のメサ構造を備え、前記回折格子が前記第2のメサ構造表面に形成され、前記主回折格子の幅が、前記第2のメサ構造の幅の10%以下であることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体レーザ装置。
- 前記副回折格子の幅が、前記主回折格子の幅よりも狭く、かつ、前記主回折格子の幅の半分より大きいことを特徴とする請求項1ないし請求項7いずれか一項記載の半導体レーザ装置。
- 前記主回折格子が前記第1のメサ構造の幅の中点直下に配置され、前記副回折格子が前記第1のメサ構造の幅を3等分する点の直下に配置されることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体レーザ装置。
- 前記シリコン層が第2のメサ構造を備え、前記回折格子が前記第2のメサ構造表面に形成され、前記主回折格子が前記第2のメサ構造の幅の中点に配置され、前記副回折格子が前記第2のメサ構造の幅を3等分する点に配置されることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体レーザ装置。
- 前記化合物半導体層と前記シリコン層が直接接することを特徴とする請求項1ないし請求項10いずれか一項記載の半導体レーザ装置。
- 前記化合物半導体層と前記シリコン層との間に、厚さ100nm以下の絶縁層を、さらに備えることを特徴とする請求項1ないし請求項10いずれか一項記載の半導体レーザ装置。
- 前記回折格子が前記シリコン層表面に設けられ、シリコン酸化膜で充填された凹部で形成されることを特徴とする請求項1ないし請求項11いずれか一項記載の半導体レーザ装置。
- 前記半導体レーザ装置が、超格子のサブバンド間遷移で発光する量子カスケードレーザであることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体レーザ装置。
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US20170214216A1 (en) * | 2014-06-26 | 2017-07-27 | Alcatel Lucent Usa, Inc. | Hybrid semiconductor lasers |
US10096971B2 (en) * | 2014-06-26 | 2018-10-09 | Alcatel-Lucent Usa Inc. | Hybrid semiconductor lasers |
JP2019140319A (ja) * | 2018-02-14 | 2019-08-22 | 住友電気工業株式会社 | ハイブリッド光装置、ハイブリッド光装置を作製する方法 |
JP2020017650A (ja) * | 2018-07-26 | 2020-01-30 | 住友電気工業株式会社 | 光半導体素子の製造方法 |
JP7056440B2 (ja) | 2018-07-26 | 2022-04-19 | 住友電気工業株式会社 | 光半導体素子の製造方法 |
JP2020053527A (ja) * | 2018-09-26 | 2020-04-02 | 住友電気工業株式会社 | 光半導体素子およびその製造方法 |
JP7159750B2 (ja) | 2018-09-26 | 2022-10-25 | 住友電気工業株式会社 | 光半導体素子およびその製造方法 |
JP2021034586A (ja) * | 2019-08-26 | 2021-03-01 | 住友電気工業株式会社 | 半導体素子およびその製造方法 |
JP7363193B2 (ja) | 2019-08-26 | 2023-10-18 | 住友電気工業株式会社 | 半導体素子の製造方法 |
JP2021128981A (ja) * | 2020-02-12 | 2021-09-02 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
JP7279658B2 (ja) | 2020-02-12 | 2023-05-23 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
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US20150270684A1 (en) | 2015-09-24 |
US9431793B2 (en) | 2016-08-30 |
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