JP2015176904A - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

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Publication number
JP2015176904A
JP2015176904A JP2014050339A JP2014050339A JP2015176904A JP 2015176904 A JP2015176904 A JP 2015176904A JP 2014050339 A JP2014050339 A JP 2014050339A JP 2014050339 A JP2014050339 A JP 2014050339A JP 2015176904 A JP2015176904 A JP 2015176904A
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JP
Japan
Prior art keywords
light
light receiving
receiving element
layer
semiconductor
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Pending
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JP2014050339A
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English (en)
Japanese (ja)
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JP2015176904A5 (https=
Inventor
亮太 竹村
Ryota Takemura
亮太 竹村
和樹 山路
Kazuki Yamaji
和樹 山路
中路　雅晴
Masaharu Nakaji
雅晴 中路
真人武 菊地
Mototake Kikuchi
真人武 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2014050339A priority Critical patent/JP2015176904A/ja
Publication of JP2015176904A publication Critical patent/JP2015176904A/ja
Publication of JP2015176904A5 publication Critical patent/JP2015176904A5/ja
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)
JP2014050339A 2014-03-13 2014-03-13 半導体受光素子 Pending JP2015176904A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014050339A JP2015176904A (ja) 2014-03-13 2014-03-13 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014050339A JP2015176904A (ja) 2014-03-13 2014-03-13 半導体受光素子

Publications (2)

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JP2015176904A true JP2015176904A (ja) 2015-10-05
JP2015176904A5 JP2015176904A5 (https=) 2017-01-12

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ID=54255868

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JP2014050339A Pending JP2015176904A (ja) 2014-03-13 2014-03-13 半導体受光素子

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JP (1) JP2015176904A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018128103A1 (ja) * 2017-01-05 2018-07-12 パナソニック株式会社 半導体リレー
JPWO2022074780A1 (https=) * 2020-10-08 2022-04-14
JP2023038039A (ja) * 2021-09-06 2023-03-16 キヤノン株式会社 光電変換装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364489A (en) * 1976-11-22 1978-06-08 Toshiba Corp Photo semiconductor device
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US20030137026A1 (en) * 2002-01-21 2003-07-24 Park Chan Yong Avalanche photodiode having an electrically isolated deep guard ring
JP2006237186A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2008180770A (ja) * 2007-01-23 2008-08-07 Sumitomo Electric Ind Ltd 赤外線光学部品および赤外線光学部品の製造方法
JP2011253987A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364489A (en) * 1976-11-22 1978-06-08 Toshiba Corp Photo semiconductor device
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US20030137026A1 (en) * 2002-01-21 2003-07-24 Park Chan Yong Avalanche photodiode having an electrically isolated deep guard ring
JP2006237186A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2008180770A (ja) * 2007-01-23 2008-08-07 Sumitomo Electric Ind Ltd 赤外線光学部品および赤外線光学部品の製造方法
JP2011253987A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018128103A1 (ja) * 2017-01-05 2018-07-12 パナソニック株式会社 半導体リレー
JPWO2018128103A1 (ja) * 2017-01-05 2019-07-25 パナソニック株式会社 半導体リレー
US10818815B2 (en) 2017-01-05 2020-10-27 Panasonic Corporation Semiconductor relay
JPWO2022074780A1 (https=) * 2020-10-08 2022-04-14
JP2023038039A (ja) * 2021-09-06 2023-03-16 キヤノン株式会社 光電変換装置
JP7774999B2 (ja) 2021-09-06 2025-11-25 キヤノン株式会社 光電変換装置

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