JP2015162632A - 光電変換装置、光電変換装置の製造方法及び電子機器 - Google Patents
光電変換装置、光電変換装置の製造方法及び電子機器 Download PDFInfo
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Abstract
【解決手段】基板1の一方面側に設けられたTFT10と、TFT10を覆うように設けられた第2層間絶縁膜7と、第2層間絶縁膜7上であって、基板1に形成される膜の厚み方向から見てTFT10と重なる領域に設けられた遮光膜9と、第2層間絶縁膜7上に設けられた下部電極8と、下部電極8上に設けられたカルコパイライト構造を有する半導体膜21と、を備え、遮光膜9と下部電極8と半導体膜21には、16族元素が含まれていることを特徴とする光電変換装置。
【選択図】図3
Description
上記11−13−16族化合物半導体には、銅(Cu)、インジウム(In)、セレン(Se)を含むCuInSe2膜(いわゆるCIS膜)や、Cu、In、ガリウム(Ga)、Seを含むCu(In、Ga)Se2膜(いわゆるCIGS膜)が用いられる。CIS膜は、Cu,Inを含む金属膜を500℃程度のSe雰囲気でアニールすることで形成される。また、同様にCIGS膜は、Cu,In、Gaを含む金属膜をSe雰囲気でアニールすることで形成される。
<光電変換装置>
まず、実施形態1の光電変換装置としてのイメージセンサーについて、図1〜図3を参照して説明する。
図1(a)は光電変換装置としてのイメージセンサーの電気的な構成を示す概略配線図、同図(b)は光電変換素子としてのフォトセンサーの等価回路図である。図2はイメージセンサーにおいてフォトセンサーの配置を示す概略部分平面図、図3は図2のA−A’線で切ったフォトセンサーの構造を示す概略断面図である。
実施形態1の光電変換装置としてのイメージセンサーの製造方法について、図3と図4を用いて説明する。図4は光電変換装置としてのイメージセンサーの製造方法を示す概略部分断面図であり、第2層間絶縁膜7上の製造方法を示す概略断面図である。
このようにして、実施形態1の光電変換装置が形成される。
このような光電変換装置としてのイメージセンサーは、TFT10への光の入射を防止する為の遮光膜9が形成されており、遮光膜9はMoからなる導電膜9aとMoSe2からなる半導体膜9bとで構成されている。半導体膜9bは禁制帯幅1.35〜1.41eV程度の半導体であるので、半導体膜9bは上記の禁制帯幅以上のエネルギーを持つ光を吸収し、遮光膜の反射率が低下する。このように、遮光膜を金属材料だけで形成するのではなく、16族元素を含む半導体膜も形成することにより、遮光膜で反射する光が少なくなるので、本来入射すべきフォトダイオード20とは異なる場所にある光電変換部に入射する光が少なくなる。その結果、所望の画像を得ることができる光電変換装置としてのイメージセンサーを提供することができる。
<光電変換装置>
実施形態2の光電変換装置としてのイメージセンサーについて、図1、図2、図5を参照して説明する。図5は、実施形態2において、図2のA−A’線で切ったフォトセンサーの構造を示す概略断面図である。尚、実施形態1と同一の構成部位については、同一の番号を使用し、重複する説明は省略する。
実施形態2の光電変換装置としてのイメージセンサーの製造方法について、図5と図6を用いて説明する。
図6は、光電変換装置としてのイメージセンサーの製造方法を示す概略部分断面図であり、第2層間絶縁膜7上の製造方法を示す概略断面図である。実施形態2において、実施形態1と異なる点は、下部電極80と遮光膜90の構造である。第2層間絶縁膜7を形成する工程までは、実施形態1と同じであるため説明を省略する。
図6(b)に示すように、Mo膜89aをフォトリソグラフィー法によってパターニングし、下部電極80の一部となるMoからなる導電膜8aと、遮光膜90の一部となるMoからなる導電膜9aを形成する。
図6(c)に示すように、第2層間絶縁膜7、導電膜8a、及び導電膜9aを覆うように、スパッタリング法等によって、Cu−Ga合金膜21aとIn膜21bを形成する。Cu−Ga合金膜21aとIn膜21bは、後のセレン化アニールによってカルコパイライト構造を有する半導体膜21となるプリカーサ膜である。プリカーサ膜の合計膜厚は500nm程度である。
このような光電変換装置としてのイメージセンサーは、TFT10への光の入射を防止する為の遮光膜90が形成されており、遮光膜90は導電膜9aと半導体膜90bとで構成されている。実施形態2では、半導体膜90bは導電膜9aの上面だけでなく、側面にも形成されている。半導体膜90bは禁制帯幅1.35〜1.41eV程度の半導体であるので、半導体膜90bは上記の禁制帯幅以上のエネルギーを持つ光を吸収し、遮光膜90の上面及び側面の反射率が低下する。このように、遮光膜90を金属材料だけで形成するのではなく、16族元素を含む半導体膜90bも形成することにより、遮光膜90で反射する光が少なくなるので、本来入射すべき光電変換部とは異なる場所にある光電変換部に入射する光が少なくなる。実施形態2では、遮光膜90の上面と側面が16族元素を含む半導体膜90bであるので、実施形態1に比べて遮光膜90での光の反射が少なくなる。その結果、所望の画像を得ることができる光電変換装置としてのイメージセンサーを提供することができる。
<生体認証装置>
次に、本実施形態の電子機器としての生体認証装置について、図7を参照して説明する。図7(a)は生体認証装置を示す概略斜視図、同図(b)は概略断面図である。
上記実施形態のイメージセンサー100及びイメージセンサー51において、フォトセンサー50の電気的な構成とその接続は、これに限定されない。例えば、フォトダイオード20からの電気的な出力をTFT10のゲート電極3gに接続して、ソース電極5sとドレイン電極5dとの間の電圧や電流の変化として受光を検出するとしても良い。
上記実施形態のイメージセンサー100において、カルコパイライト構造を有する半導体膜21と、遮光膜9,90と、下部電極8,80とに含まれる16族元素はセレン(Se)としたが、必ずしもSeに限定されない。例えば、16族元素を硫黄(S)とし、カルコパイライト構造を有する半導体膜をCIS膜とし、遮光膜はMo膜とMoS2膜から構成されても良い。また、カルコパイライト構造を有する半導体膜と、遮光膜と、下部電極とに含まれる16族元素は、SeとSの2元素でも良い。他にも、16族元素にテルルを用いても良い。
上記実施形態の光電変換装置の製造方法において、プリカーサ膜はCu−Ga合金膜21aとIn膜21bとしたが、これに限定されない。例えば、Cu−Ga合金膜の代わりに、Cu膜を成膜しても良い。この場合、カルコパイライト構造を有する半導体膜は、CIS膜となる。また、成膜順序を変更して、In膜を成膜した後に、Cu−Ga合金膜やCu膜を成膜しても良い。更に、積層数を増やして、Cu−Ga合金膜とIn膜を何層にも積層しても良い。また、積層膜ではなく、Cu−In−Ga合金膜やCu−In合金膜を成膜しても良い。
上記実施形態のイメージセンサー100が搭載される電子機器は、生体認証装置500に限定されない。例えば、指紋や眼球の虹彩を撮像する固体撮像装置にも適用することができる。
Claims (7)
- 基板の一方面側に設けられたスイッチング素子と、
前記スイッチング素子を覆うように設けられた層間絶縁膜と、
前記層間絶縁膜上であって、前記基板の膜厚方向から見て前記スイッチング素子と重なる領域に設けられた遮光膜と、
前記層間絶縁膜上に設けられた下部電極と、
前記下部電極上に設けられたカルコパイライト構造を有する半導体膜と、を備え、
前記遮光膜と前記下部電極と前記半導体膜には、16族元素が含まれていることを特徴とする光電変換装置。 - 前記16族元素は、セレン、硫黄のうち、少なくとも1つを含むことを特徴とする請求項1に記載の光電変換装置。
- 前記遮光膜、及び前記下部電極は、モリブデンを含むことを特徴とする請求項2に記載の光電変換装置。
- 基板の一方面側にスイッチング素子を形成する工程と、
前記スイッチング素子を覆うように層間絶縁膜を形成する工程と、
前記層間絶縁膜上であって、前記基板の膜厚方向から見て前記スイッチング素子と重なる領域に遮光膜を形成する工程と、
前記層間絶縁膜上に下部電極を形成する工程と、
前記下部電極上にカルコパイライト構造を有する半導体膜を形成する工程と、を備え、
前記半導体膜には、16族元素が含まれており、
前記半導体膜を形成する工程において、前記遮光膜と前記下部電極を、前記16族元素と反応させ、前記16族元素を含む遮光膜と前記16族元素を含む下部電極を形成することを特徴とする光電変換装置の製造方法。 - 前記16族元素は、セレン、硫黄のうち、少なくとも1つを含むことを特徴とする請求項4に記載の光電変換装置の製造方法。
- 前記遮光膜、及び前記下部電極は、モリブデンを含むことを特徴とする請求項5に記載の光電変換装置の製造方法。
- 請求項1乃至3のいずれか一項に記載の光電変換装置を備えたことを特徴とする電子機器。
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