JP2015160251A - 加工装置 - Google Patents
加工装置 Download PDFInfo
- Publication number
- JP2015160251A JP2015160251A JP2014034868A JP2014034868A JP2015160251A JP 2015160251 A JP2015160251 A JP 2015160251A JP 2014034868 A JP2014034868 A JP 2014034868A JP 2014034868 A JP2014034868 A JP 2014034868A JP 2015160251 A JP2015160251 A JP 2015160251A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- processing
- grinding
- dressing
- grindstone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 238000005520 cutting process Methods 0.000 description 52
- 239000006061 abrasive grain Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
レーザー種類:Ybファイバーレーザー
波長:515nmから1030nmのパルスレーザー
繰返し周波数:200kHz(1kHz〜1MHz)
出力:30W(11W〜50W)
パルス幅:8ps
研削スピンドル回転数:1000min−1
研削ホイール外径:φ300mm
2、52 チャックテーブル
4、54 ドレッシング手段
34 研削砥石(加工砥石)
35 研削面(接触面)
41、91 発光部
42、92 調整部
43、93 繰返し周波数可変装置
44 回転速度認識部
51 切削装置(加工装置)
85 切削砥石(加工砥石)
86 切削面(接触面)
W1、W2 被加工物
Claims (2)
- 被加工物を保持するチャックテーブルと、該チャックテーブルで保持する被加工物を加工する加工砥石を回転可能に装着する加工手段と、該加工手段に装着される該加工砥石が被加工物に接触する接触面をドレッシングするドレッシング手段と、を備える加工装置であって、
該ドレッシング手段は、該接触面にレーザー光線を照射する発光部と、該発光部から照射されるレーザー光線の波長および出力を調整する調整部と、を備え、
該ドレッシング手段により、回転する該加工砥石が被加工物に接触していない領域の該接触面にレーザー光線を照射させて該接触面をドレッシングすることを可能にした加工装置。 - 該加工砥石の回転速度を認識する回転速度認識部と、
該回転速度認識部により認識される該加工砥石の回転速度に応じて、該発光部から照射されるレーザー光線の繰返し周波数を可変する繰返し周波数可変装置と、を備える請求項1記載の加工装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014034868A JP6353666B2 (ja) | 2014-02-26 | 2014-02-26 | 加工装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014034868A JP6353666B2 (ja) | 2014-02-26 | 2014-02-26 | 加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015160251A true JP2015160251A (ja) | 2015-09-07 |
JP6353666B2 JP6353666B2 (ja) | 2018-07-04 |
Family
ID=54183711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014034868A Active JP6353666B2 (ja) | 2014-02-26 | 2014-02-26 | 加工装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6353666B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020001146A (ja) * | 2018-07-02 | 2020-01-09 | 株式会社ディスコ | 切削ブレード、切削ブレードの製造方法及び被加工物の加工方法 |
DE102022207364A1 (de) | 2021-07-26 | 2023-01-26 | Disco Corporation | Schleifverfahren für harte wafer |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949288A (ja) * | 1972-09-18 | 1974-05-13 | ||
JPS61152367A (ja) * | 1984-12-27 | 1986-07-11 | Agency Of Ind Science & Technol | Cbn研削砥石のレ−ザドレツシング装置 |
JP2000210782A (ja) * | 1998-02-19 | 2000-08-02 | Ricoh Microelectronics Co Ltd | 加工方法及びその装置 |
JP2004276144A (ja) * | 2003-03-13 | 2004-10-07 | Denso Corp | 砥石表面形状調整方法及び装置、研削盤 |
JP2005052942A (ja) * | 2003-08-06 | 2005-03-03 | Tsunemoto Kuriyagawa | レーザーハイコンセントレーションフォーミング方法及びシステム |
JP2009018368A (ja) * | 2007-07-11 | 2009-01-29 | Disco Abrasive Syst Ltd | 加工装置 |
JP2009297884A (ja) * | 2008-06-17 | 2009-12-24 | Fujitsu Ltd | 半導体装置の製造方法並びに研削装置及び研削方法 |
-
2014
- 2014-02-26 JP JP2014034868A patent/JP6353666B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949288A (ja) * | 1972-09-18 | 1974-05-13 | ||
JPS61152367A (ja) * | 1984-12-27 | 1986-07-11 | Agency Of Ind Science & Technol | Cbn研削砥石のレ−ザドレツシング装置 |
JP2000210782A (ja) * | 1998-02-19 | 2000-08-02 | Ricoh Microelectronics Co Ltd | 加工方法及びその装置 |
JP2004276144A (ja) * | 2003-03-13 | 2004-10-07 | Denso Corp | 砥石表面形状調整方法及び装置、研削盤 |
JP2005052942A (ja) * | 2003-08-06 | 2005-03-03 | Tsunemoto Kuriyagawa | レーザーハイコンセントレーションフォーミング方法及びシステム |
JP2009018368A (ja) * | 2007-07-11 | 2009-01-29 | Disco Abrasive Syst Ltd | 加工装置 |
JP2009297884A (ja) * | 2008-06-17 | 2009-12-24 | Fujitsu Ltd | 半導体装置の製造方法並びに研削装置及び研削方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020001146A (ja) * | 2018-07-02 | 2020-01-09 | 株式会社ディスコ | 切削ブレード、切削ブレードの製造方法及び被加工物の加工方法 |
JP7166714B2 (ja) | 2018-07-02 | 2022-11-08 | 株式会社ディスコ | 切削ブレード、切削ブレードの製造方法及び被加工物の加工方法 |
DE102022207364A1 (de) | 2021-07-26 | 2023-01-26 | Disco Corporation | Schleifverfahren für harte wafer |
KR20230016590A (ko) | 2021-07-26 | 2023-02-02 | 가부시기가이샤 디스코 | 경질 웨이퍼의 연삭 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP6353666B2 (ja) | 2018-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8048780B2 (en) | Method of processing optical device wafer | |
US7977215B2 (en) | Method of processing optical device wafer | |
KR102549852B1 (ko) | 평탄화 방법 | |
US7611970B2 (en) | Wafer processing method | |
KR102450902B1 (ko) | SiC 웨이퍼의 생성 방법 | |
US11094523B2 (en) | Processing method for wafer | |
US7745311B2 (en) | Working method for an optical device wafer | |
KR20170021731A (ko) | 웨이퍼의 가공 방법 | |
CN107026073B (zh) | 处理基板的方法 | |
JP6324796B2 (ja) | 単結晶基板の加工方法 | |
JP6198618B2 (ja) | ウェーハの加工方法 | |
JP6353666B2 (ja) | 加工装置 | |
CN110571131B (zh) | 倒角加工方法 | |
JP2013219271A (ja) | 光デバイスウエーハの加工方法 | |
JP7166714B2 (ja) | 切削ブレード、切削ブレードの製造方法及び被加工物の加工方法 | |
JP2013219076A (ja) | 光デバイスウエーハの加工方法 | |
JP2019150925A (ja) | 被加工物の研削方法 | |
US20240105513A1 (en) | Wafer processing method and device chip manufacturing method | |
JP7081993B2 (ja) | 被加工物の加工方法 | |
JP2024011312A (ja) | ウェーハの研削方法および研削装置 | |
KR20230068998A (ko) | 가공 방법 | |
CN113199390A (zh) | 晶片的加工方法 | |
JP2023158692A (ja) | 被加工物の研削方法 | |
JP2022076711A (ja) | ウェーハの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180323 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180522 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180611 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6353666 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |