JP2015146461A5 - - Google Patents
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- JP2015146461A5 JP2015146461A5 JP2015090579A JP2015090579A JP2015146461A5 JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5 JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- oxygen
- precursor
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 26
- 229910052710 silicon Inorganic materials 0.000 claims 21
- 239000010703 silicon Substances 0.000 claims 21
- 239000002243 precursor Substances 0.000 claims 16
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 8
- 238000005137 deposition process Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000005229 chemical vapour deposition Methods 0.000 claims 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- IVSPVXKJEGPQJP-UHFFFAOYSA-N 2-silylethylsilane Chemical group [SiH3]CC[SiH3] IVSPVXKJEGPQJP-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 150000003141 primary amines Chemical class 0.000 claims 2
- 150000003335 secondary amines Chemical class 0.000 claims 2
- 239000012686 silicon precursor Substances 0.000 claims 2
- 150000003512 tertiary amines Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261677267P | 2012-07-30 | 2012-07-30 | |
| US61/677,267 | 2012-07-30 | ||
| US13/949,420 | 2013-07-24 | ||
| US13/949,420 US9243324B2 (en) | 2012-07-30 | 2013-07-24 | Methods of forming non-oxygen containing silicon-based films |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Division JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015146461A JP2015146461A (ja) | 2015-08-13 |
| JP2015146461A5 true JP2015146461A5 (cg-RX-API-DMAC7.html) | 2017-01-12 |
| JP6356630B2 JP6356630B2 (ja) | 2018-07-11 |
Family
ID=48917373
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
| JP2015090579A Active JP6356630B2 (ja) | 2012-07-30 | 2015-04-27 | 酸素不含ケイ素系膜及びその形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9243324B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2692897B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5788932B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101640153B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN103572251B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI504775B (cg-RX-API-DMAC7.html) |
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| TW201441408A (zh) * | 2013-03-15 | 2014-11-01 | Applied Materials Inc | 包含氮化矽之膜的電漿輔助原子層沉積 |
| JP5855691B2 (ja) | 2014-02-25 | 2016-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6340251B2 (ja) * | 2014-05-30 | 2018-06-06 | 東京エレクトロン株式会社 | ＳｉＣＮ膜の成膜方法 |
| US9685325B2 (en) | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
| US9969756B2 (en) | 2014-09-23 | 2018-05-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude | Carbosilane substituted amine precursors for deposition of Si-containing films and methods thereof |
| KR102188751B1 (ko) * | 2014-10-24 | 2020-12-08 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 막을 증착시키기 위한 조성물 및 이를 사용하는 방법 |
| US9879340B2 (en) * | 2014-11-03 | 2018-01-30 | Versum Materials Us, Llc | Silicon-based films and methods of forming the same |
| CN107406978B (zh) * | 2015-02-06 | 2019-12-03 | 弗萨姆材料美国有限责任公司 | 用于碳掺杂含硅膜的组合物以及使用所述组合物的方法 |
| TWI716333B (zh) | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| JP6968701B2 (ja) | 2015-05-02 | 2021-11-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 低誘電率かつ低湿式エッチング速度の誘電体薄膜を堆積させるための方法 |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US9786492B2 (en) * | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| CN109072426B (zh) * | 2016-02-26 | 2021-12-03 | 弗萨姆材料美国有限责任公司 | 组合物和使用其沉积含硅膜的方法 |
| TWI724141B (zh) | 2016-03-23 | 2021-04-11 | 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US10157736B2 (en) * | 2016-05-06 | 2018-12-18 | Lam Research Corporation | Methods of encapsulation |
| US20180033614A1 (en) | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| KR102646828B1 (ko) * | 2017-04-13 | 2024-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 저-k 막들의 증착을 위한 방법 및 장치 |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| CN114875388A (zh) | 2017-05-05 | 2022-08-09 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
| TWI633201B (zh) * | 2017-10-24 | 2018-08-21 | 國立交通大學 | 非晶碳薄膜、其製造方法與包含其之光學系統 |
| US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
| US11239420B2 (en) | 2018-08-24 | 2022-02-01 | Lam Research Corporation | Conformal damage-free encapsulation of chalcogenide materials |
| JP7421551B2 (ja) * | 2018-10-03 | 2024-01-24 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素及び窒素を含有する膜を製造するための方法 |
| SE543442C2 (en) * | 2019-02-01 | 2021-02-16 | Ionautics Ab | A method and apparatus for chemical vapor deposition and a Fin field-effect transistor |
| US20220234903A1 (en) * | 2019-05-24 | 2022-07-28 | Versum Materials Us, Llc | Organosilicon precursors for deposition of silicon-containing films |
| TWI819257B (zh) * | 2019-12-20 | 2023-10-21 | 美商應用材料股份有限公司 | 具有可調整碳含量之碳氮化矽間隙填充 |
| US11499014B2 (en) | 2019-12-31 | 2022-11-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane |
| US12341005B2 (en) * | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| US12142479B2 (en) * | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| CN114686844A (zh) * | 2020-12-31 | 2022-07-01 | 厦门理工学院 | 一种基于原子层沉积的非晶硅薄膜制备方法 |
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2013
- 2013-07-24 US US13/949,420 patent/US9243324B2/en active Active
- 2013-07-29 TW TW102127178A patent/TWI504775B/zh active
- 2013-07-30 JP JP2013157982A patent/JP5788932B2/ja active Active
- 2013-07-30 EP EP13178623.8A patent/EP2692897B1/en active Active
- 2013-07-30 CN CN201310332542.4A patent/CN103572251B/zh active Active
- 2013-07-30 KR KR1020130090486A patent/KR101640153B1/ko active Active
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2015
- 2015-04-27 JP JP2015090579A patent/JP6356630B2/ja active Active