JP2015144248A - 半導体装置、及びその製造方法 - Google Patents

半導体装置、及びその製造方法 Download PDF

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Publication number
JP2015144248A
JP2015144248A JP2014245236A JP2014245236A JP2015144248A JP 2015144248 A JP2015144248 A JP 2015144248A JP 2014245236 A JP2014245236 A JP 2014245236A JP 2014245236 A JP2014245236 A JP 2014245236A JP 2015144248 A JP2015144248 A JP 2015144248A
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Japan
Prior art keywords
mos transistor
type mos
layer
semiconductor device
region
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Pending
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JP2014245236A
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English (en)
Japanese (ja)
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JP2015144248A5 (cg-RX-API-DMAC7.html
Inventor
亮太 関口
Ryota Sekiguchi
亮太 関口
尾内　敏彦
Toshihiko Onouchi
敏彦 尾内
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014245236A priority Critical patent/JP2015144248A/ja
Priority to PCT/JP2014/006359 priority patent/WO2015098073A1/en
Priority to EP14833293.5A priority patent/EP3087606A1/en
Priority to CN201480070810.2A priority patent/CN105900235A/zh
Priority to US15/106,996 priority patent/US9786806B2/en
Publication of JP2015144248A publication Critical patent/JP2015144248A/ja
Publication of JP2015144248A5 publication Critical patent/JP2015144248A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H10F30/2275—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier being a metal-semiconductor-metal [MSM] Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/283—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having Schottky gates
    • H10F30/2843—Schottky gate FETs, e.g. photo MESFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014245236A 2013-12-25 2014-12-03 半導体装置、及びその製造方法 Pending JP2015144248A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014245236A JP2015144248A (ja) 2013-12-25 2014-12-03 半導体装置、及びその製造方法
PCT/JP2014/006359 WO2015098073A1 (en) 2013-12-25 2014-12-22 Semiconductor device and method for manufacturing the same
EP14833293.5A EP3087606A1 (en) 2013-12-25 2014-12-22 Semiconductor device and method for manufacturing the same
CN201480070810.2A CN105900235A (zh) 2013-12-25 2014-12-22 半导体装置及其制造方法
US15/106,996 US9786806B2 (en) 2013-12-25 2014-12-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013267156 2013-12-25
JP2013267156 2013-12-25
JP2014245236A JP2015144248A (ja) 2013-12-25 2014-12-03 半導体装置、及びその製造方法

Publications (2)

Publication Number Publication Date
JP2015144248A true JP2015144248A (ja) 2015-08-06
JP2015144248A5 JP2015144248A5 (cg-RX-API-DMAC7.html) 2017-12-28

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Family Applications (1)

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JP2014245236A Pending JP2015144248A (ja) 2013-12-25 2014-12-03 半導体装置、及びその製造方法

Country Status (5)

Country Link
US (1) US9786806B2 (cg-RX-API-DMAC7.html)
EP (1) EP3087606A1 (cg-RX-API-DMAC7.html)
JP (1) JP2015144248A (cg-RX-API-DMAC7.html)
CN (1) CN105900235A (cg-RX-API-DMAC7.html)
WO (1) WO2015098073A1 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018509004A (ja) * 2015-12-31 2018-03-29 ユニスト（ウルサン ナショナル インスティテュート オブ サイエンス アンド テクノロジー） ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ
JP2020510323A (ja) * 2017-02-23 2020-04-02 フォルシュングスフェアブント ベルリン エー ファウＦｏｒｓｃｈｕｎｇｓｖｅｒｂｕｎｄ Ｂｅｒｌｉｎ ｅ．Ｖ． 放射検出器及びその製造方法
JP2020136910A (ja) * 2019-02-20 2020-08-31 キヤノン株式会社 発振器、撮像装置
JP2021034905A (ja) * 2019-08-26 2021-03-01 キヤノン株式会社 発振器、照明装置、撮像装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6812172B2 (ja) * 2016-08-30 2021-01-13 パイオニア株式会社 電磁波検出装置
JP7516786B2 (ja) * 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
TWI715311B (zh) 2019-11-26 2021-01-01 國立交通大學 具有寬能隙三五族汲極之金屬氧化物矽半導體場效電晶體及其製造方法
CN114203641A (zh) * 2021-12-08 2022-03-18 厦门吉顺芯微电子有限公司 一种cmos工艺集成肖特基器件的制程整合工艺
CN114242720A (zh) * 2021-12-13 2022-03-25 厦门市三安集成电路有限公司 一种氮化物器件和cmos器件集成结构及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926705A (en) * 1995-10-19 1999-07-20 Nec Corporation Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode
US20050167709A1 (en) * 2002-09-19 2005-08-04 Augusto Carlos J. Light-sensing device
JP2006210685A (ja) * 2005-01-28 2006-08-10 Canon Inc 固体撮像装置の製造方法
JP2007242894A (ja) * 2006-03-08 2007-09-20 Toshiba Corp 半導体装置およびその製造方法
US20090057770A1 (en) * 2007-09-04 2009-03-05 Sung-Man Pang Semiconductor device and method of fabricating the same
JP2013038390A (ja) * 2011-07-13 2013-02-21 Canon Inc ダイオード素子及び検出素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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DE4219523A1 (de) 1992-06-15 1993-12-16 Daimler Benz Ag Monolithisch integrierter Millimeterwellenschaltkreis und Verfahren zu dessen Herstellung
JP2870470B2 (ja) 1996-03-04 1999-03-17 ソニー株式会社 受光装置の製造方法
JP2008306080A (ja) 2007-06-11 2008-12-18 Hitachi Ltd 光センサ素子、およびこれを用いた光センサ装置、画像表示装置
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926705A (en) * 1995-10-19 1999-07-20 Nec Corporation Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode
US20050167709A1 (en) * 2002-09-19 2005-08-04 Augusto Carlos J. Light-sensing device
JP2006210685A (ja) * 2005-01-28 2006-08-10 Canon Inc 固体撮像装置の製造方法
JP2007242894A (ja) * 2006-03-08 2007-09-20 Toshiba Corp 半導体装置およびその製造方法
US20090057770A1 (en) * 2007-09-04 2009-03-05 Sung-Man Pang Semiconductor device and method of fabricating the same
JP2013038390A (ja) * 2011-07-13 2013-02-21 Canon Inc ダイオード素子及び検出素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018509004A (ja) * 2015-12-31 2018-03-29 ユニスト（ウルサン ナショナル インスティテュート オブ サイエンス アンド テクノロジー） ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ
JP2020510323A (ja) * 2017-02-23 2020-04-02 フォルシュングスフェアブント ベルリン エー ファウＦｏｒｓｃｈｕｎｇｓｖｅｒｂｕｎｄ Ｂｅｒｌｉｎ ｅ．Ｖ． 放射検出器及びその製造方法
JP2020136910A (ja) * 2019-02-20 2020-08-31 キヤノン株式会社 発振器、撮像装置
JP2021034905A (ja) * 2019-08-26 2021-03-01 キヤノン株式会社 発振器、照明装置、撮像装置

Also Published As

Publication number Publication date
US9786806B2 (en) 2017-10-10
US20160351744A1 (en) 2016-12-01
EP3087606A1 (en) 2016-11-02
CN105900235A (zh) 2016-08-24
WO2015098073A1 (en) 2015-07-02

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