JP2015143688A - プログラムされたマニピュレータを用いた表面除層 - Google Patents
プログラムされたマニピュレータを用いた表面除層 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/28—Splitting layers from work; Mutually separating layers by cutting
- B26D3/282—Splitting layers from work; Mutually separating layers by cutting by peeling-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Forests & Forestry (AREA)
- Health & Medical Sciences (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
112 走査電子顕微鏡(SEM)
114 真空室
118 試料
120 ステージ
122 コンピュータまたはコントローラ
130 除層プローブ・チップ
134 表示装置
Claims (16)
- 故障分離および欠陥位置特定のための試料の原位置除層用の装置であって、
光軸に沿ったビームを生み出す光学デバイスと、
真空室と、
表面除層のために試料を支持するために前記真空室内に設置され、前記光軸に対して可動の運動ステージと、
前記試料の表面から材料層を除去する除層プローブ・チップを有するアクチュエータと
を備える装置。 - 前記除層プローブが、前記真空室内で表面除層を実行し、同時に前記光学デバイスによって観察されるように設置された、請求項1に記載の装置。
- 前記除層プローブ・チップが、前記試料の表面から材料を剥離することができる切削刃を含む、請求項1または2に記載の装置。
- 前記切削刃が、前記試料上に剥離されたエリアを作り出し、前記剥離されたエリアが、前記除層プローブ・チップの前記切削刃によって画定された幅寸法を有する、請求項3に記載の装置。
- 前記除層プローブ・チップが幅寸法を有し、前記除層プローブ・チップが、前記試料上のエリアを剥離するように形成されており、前記試料上の剥離されたエリアが、前記除層プローブ・チップの前記幅寸法に実質的に等しい幅寸法を有する、請求項1から4のいずれか一項に記載の装置。
- 前記除層プローブ・チップの前記切削刃が50μm以下の幅寸法を有する、請求項3に記載の装置。
- 前記切削刃の前記幅寸法が10μmから50μmの範囲内にある、請求項6に記載の装置。
- 前記除層プローブ・チップが、50°以下の角度で前記試料の表面と接触するように、前記アクチュエータ内に装着された、請求項1から7のいずれか一項に記載の装置。
- 前記除層プローブ・チップが、45°から50°の間の範囲内で前記試料の表面と接触するように、前記アクチュエータ内に装着された、請求項8に記載の装置。
- 前記除層プローブ・チップがタングステンでできている、請求項1から9のいずれか一項に記載の装置。
- 前記光学システムが荷電粒子ビーム・システムである、請求項1から10のいずれか一項に記載の装置。
- 故障分離および欠陥位置特定のための試料の原位置除層法であって、
可動ステージ上に試料を装着するステップと、
前記試料のターゲット・エリアをビーム光軸と整列させるステップと、
前記試料から材料層を剥離して、その下の層の表面を露出させるステップと、
露出させた表面を電気的に検査して、電気的不良の位置を決定するステップと、
不良が見つかった場合にはこのプロセスを停止し、または、不良の位置が特定されるまで前記剥離および前記電気検査の各ステップを継続するステップと
を含む方法において、
プローブ・チップを使用して前記試料から材料層を剥離することを特徴とする方法。 - 前記試料の前記材料層の前記エリアが、前記プローブ・チップの幅寸法によって画定された幅寸法を有する、請求項11に記載の方法。
- 前記除層チップが切削刃(148)を備え、前記プローブ・チップの前記切削刃が、50μm以下の幅寸法を有するように形成された、請求項11または12に記載の方法。
- 前記プローブ・チップが、50°以下の角度で前記試料の表面と接触する、請求項11から13のいずれか一項に記載の方法。
- 前記プローブ・チップがタングステンから形成された、請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/169,100 US9735066B2 (en) | 2014-01-30 | 2014-01-30 | Surface delayering with a programmed manipulator |
US14/169,100 | 2014-01-30 |
Publications (3)
Publication Number | Publication Date |
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JP2015143688A true JP2015143688A (ja) | 2015-08-06 |
JP2015143688A5 JP2015143688A5 (ja) | 2018-03-01 |
JP6498950B2 JP6498950B2 (ja) | 2019-04-10 |
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US (1) | US9735066B2 (ja) |
EP (1) | EP2902845B1 (ja) |
JP (1) | JP6498950B2 (ja) |
CN (1) | CN104821284B (ja) |
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TWI618131B (zh) * | 2013-08-30 | 2018-03-11 | 半導體能源研究所股份有限公司 | 剝離起點形成裝置及形成方法、疊層體製造裝置 |
CN106514757B (zh) * | 2016-12-02 | 2018-09-18 | 四川航天长征装备制造有限公司 | 显微镜阀门非金属组合件毛边去除机 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6067154A (en) * | 1998-10-23 | 2000-05-23 | Advanced Micro Devices, Inc. | Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy |
JP2005090987A (ja) * | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 昇温脱離ガス分析装置および分析方法 |
US20050139781A1 (en) * | 2003-12-05 | 2005-06-30 | Eiichi Hazaki | Defective product inspection apparatus, probe positioning method and probe moving method |
JP2005189239A (ja) * | 2003-12-05 | 2005-07-14 | Hitachi High-Technologies Corp | 不良検査装置並びにプローブ位置決め方法およびプローブ移動方法 |
JP2005297185A (ja) * | 2004-04-15 | 2005-10-27 | Fei Co | 微小構造を修正するためのスタイラス・システム |
JP2006500987A (ja) * | 2002-09-30 | 2006-01-12 | メディプレックス コーポレーション | 抗血栓性多層コーティングステントからの薬物放出 |
JP2008014899A (ja) * | 2006-07-10 | 2008-01-24 | Jeol Ltd | 試料作製方法 |
JP2008281528A (ja) * | 2007-05-14 | 2008-11-20 | Nitto Bunseki Center:Kk | 薄膜積層材料の前処理方法及び前処理装置 |
US20110180707A1 (en) * | 2010-01-27 | 2011-07-28 | Takashi Iwanami | Microsampling apparatus and sampling method thereof |
JP2012073069A (ja) * | 2010-09-28 | 2012-04-12 | Fuji Electric Co Ltd | 半導体デバイス基板の欠陥部観察用試料の作製方法 |
JP2012098229A (ja) * | 2010-11-05 | 2012-05-24 | Hitachi Ltd | サンプリング装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6353219B1 (en) | 1994-07-28 | 2002-03-05 | Victor B. Kley | Object inspection and/or modification system and method |
KR970007379A (ko) * | 1995-07-19 | 1997-02-21 | 김주용 | 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법 |
US6352454B1 (en) * | 1999-10-20 | 2002-03-05 | Xerox Corporation | Wear-resistant spring contacts |
JP2001356134A (ja) * | 2000-04-13 | 2001-12-26 | Innotech Corp | プローブカード装置およびそれに用いられるプローブ |
US6630369B2 (en) | 2001-07-17 | 2003-10-07 | Ultra Tec Manufacturing, Inc. | Sample preparation apparatus and method |
JP3656910B2 (ja) | 2002-07-22 | 2005-06-08 | 住友電気工業株式会社 | スクライブ溝の加工方法及びスクライブ装置 |
TW594899B (en) * | 2002-12-18 | 2004-06-21 | Star Techn Inc | Detection card for semiconductor measurement |
JP4652725B2 (ja) * | 2004-06-09 | 2011-03-16 | エスアイアイ・ナノテクノロジー株式会社 | フォトマスク欠陥修正方法 |
KR100968697B1 (ko) | 2004-06-22 | 2010-07-06 | 호야 가부시키가이샤 | 그레이 톤 마스크 블랭크 및 그레이 톤 마스크의 제조방법 |
US20060147814A1 (en) | 2005-01-03 | 2006-07-06 | Ted Liang | Methods for repairing an alternating phase-shift mask |
KR100818998B1 (ko) | 2006-09-01 | 2008-04-02 | 삼성전자주식회사 | 결함이 수정된 포토마스크 및 포토마스크의 결함 수정 방법 |
JP2008134603A (ja) | 2006-10-31 | 2008-06-12 | Sii Nanotechnology Inc | フォトマスク欠陥修正方法 |
JP5147227B2 (ja) * | 2006-12-19 | 2013-02-20 | 株式会社日本マイクロニクス | 電気的接続装置の使用方法 |
EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
US8536875B2 (en) * | 2009-10-28 | 2013-09-17 | Infinitum Solutions, Inc. | Testing flex and APFA assemblies for hard disk drives |
FR2959823B1 (fr) | 2010-05-07 | 2013-05-17 | Centre Nat Rech Scient | Microscope a force atomique fonctionnant en mode circulaire, dispositif permettant sa mise en oeuvre et procede de mesure |
EP2461348A1 (en) | 2010-12-06 | 2012-06-06 | FEI Company | Detector system for use with transmission electron microscope spectroscopy |
-
2014
- 2014-01-30 US US14/169,100 patent/US9735066B2/en active Active
-
2015
- 2015-01-28 JP JP2015014855A patent/JP6498950B2/ja active Active
- 2015-01-29 CN CN201510045475.7A patent/CN104821284B/zh active Active
- 2015-01-29 EP EP15152977.3A patent/EP2902845B1/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6067154A (en) * | 1998-10-23 | 2000-05-23 | Advanced Micro Devices, Inc. | Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy |
JP2006500987A (ja) * | 2002-09-30 | 2006-01-12 | メディプレックス コーポレーション | 抗血栓性多層コーティングステントからの薬物放出 |
JP2005090987A (ja) * | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 昇温脱離ガス分析装置および分析方法 |
US20050139781A1 (en) * | 2003-12-05 | 2005-06-30 | Eiichi Hazaki | Defective product inspection apparatus, probe positioning method and probe moving method |
JP2005189239A (ja) * | 2003-12-05 | 2005-07-14 | Hitachi High-Technologies Corp | 不良検査装置並びにプローブ位置決め方法およびプローブ移動方法 |
JP2005297185A (ja) * | 2004-04-15 | 2005-10-27 | Fei Co | 微小構造を修正するためのスタイラス・システム |
JP2008014899A (ja) * | 2006-07-10 | 2008-01-24 | Jeol Ltd | 試料作製方法 |
JP2008281528A (ja) * | 2007-05-14 | 2008-11-20 | Nitto Bunseki Center:Kk | 薄膜積層材料の前処理方法及び前処理装置 |
US20110180707A1 (en) * | 2010-01-27 | 2011-07-28 | Takashi Iwanami | Microsampling apparatus and sampling method thereof |
JP2011153883A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi Ltd | マイクロサンプリング装置及びサンプリング方法 |
JP2012073069A (ja) * | 2010-09-28 | 2012-04-12 | Fuji Electric Co Ltd | 半導体デバイス基板の欠陥部観察用試料の作製方法 |
JP2012098229A (ja) * | 2010-11-05 | 2012-05-24 | Hitachi Ltd | サンプリング装置 |
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EP2902845B1 (en) | 2020-04-15 |
JP6498950B2 (ja) | 2019-04-10 |
CN104821284A (zh) | 2015-08-05 |
EP2902845A1 (en) | 2015-08-05 |
CN104821284B (zh) | 2019-06-21 |
US9735066B2 (en) | 2017-08-15 |
US20150214124A1 (en) | 2015-07-30 |
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