A7A7
【發明所屬之技術領域】 偵測卡’特別是關於 至4 5 0 °c )半導體測 本發明係關於一種半導體測試用之 一種可應用於超低溫及高溫（_丨2 〇 ^ 試之偵測卡。 【先前技術】 圖1為習知應用於半導體測試偵測卡1〇之俯視圖。如圖ι 所示，偵測卡10包含電路板12、設置在電路板12上之環 狀支撐物14、固定在環狀支撐物14上之探針“，及電連 接於探針1 6末端之導線ι 8。 、 圖2為習知半導體偵測卡丨〇應用於測試半導體晶圓3 〇之 剖視圖。如圖2所示，半導體晶圓3〇係安置於晶圓基座32 上，半導體晶圓3 0包含複數個晶片3 6，而晶圓基座3 2具 有加熱裝置3 4。探針1 6係經由通道2 〇電連接於電路板j 2 背面之導線26。當進行測試時，晶圓基座32將上升使得探 針1 6之尖端與晶片3 6之接墊3 8接觸。然而在測試過程 中，加熱裝置3 4將加熱半導體晶圓3 〇，而熱量將經由熱輻 射傳導至偵測卡1 0，或經由探針丨6之尖端熱傳導至偵測卡 10° 圖3為圖2之局邵放大圖。如圖3所示，環狀支撐物丨4具 有斜面28，且斜面28與電路板12之表面的夾角0=7。。此 外，探針1 6係以環氧樹脂2 4固定在環狀支撐物ι 4之斜面 28上。 為了要確保完成的偵測卡探針1 6之水平位置不因使用時 間的增加而產生針位偏移的情況，因此必須以環氧樹脂2 4 H:\Hu\Hyg\思達科技\81229\81229.doc - 5 ~ 本紙張尺度適用中國國家標準(CNS) A4規格(2i〇x 297公釐) 594899[Technical field to which the invention belongs] Detection card 'especially up to 450 ° C) Semiconductor testing The present invention relates to a detection card for semiconductor testing that can be applied to ultra-low temperature and high temperature (_ 丨 2 〇 ^ test [Prior art] FIG. 1 is a top view of a conventional test card 10 for semiconductor testing. As shown in FIG. 1, the test card 10 includes a circuit board 12, a ring-shaped support 14 disposed on the circuit board 12, The probe "fixed on the ring-shaped support 14" and the wire ι 8 electrically connected to the end of the probe 16 are shown in Fig. 2. Fig. 2 is a cross-sectional view of a conventional semiconductor detection card applied to testing a semiconductor wafer. As shown in FIG. 2, the semiconductor wafer 30 is placed on a wafer base 32. The semiconductor wafer 30 includes a plurality of wafers 36, and the wafer base 32 has a heating device 34. The probe 16 It is electrically connected to the lead 26 on the back of the circuit board j 2 via the channel 20. When the test is performed, the wafer base 32 will rise so that the tip of the probe 16 contacts the pad 38 of the wafer 36. However, during the test In the process, the heating device 34 will heat the semiconductor wafer 30, and the heat will be passed through the heat radiation Radiation is transmitted to the detection card 10, or thermally transmitted to the detection card 10 ° through the tip of the probe 丨 6. And the angle between the inclined surface 28 and the surface of the circuit board 12 is 0 = 7. In addition, the probe 16 is fixed on the inclined surface 28 of the annular support ι 4 with epoxy resin 24. In order to ensure the completed detection The horizontal position of the card probe 16 does not cause the needle position to shift due to the increase in the use time, so it must be epoxy 2 4 H: \ Hu \ Hyg \ 思达 科技 \ 81229 \ 81229.doc-5 ~ This paper size applies to Chinese National Standard (CNS) A4 (2i0x 297 mm) 594899
將探針16固定於環狀支撐物"。在習知谓測卡ι〇所使用 的材料中’探針16及支撐物14的材料大多㈣（或鍊鷄合 金）及陶資。由於鎮（或銖鶬合金）&陶毫材料本身皆具 有耐高溫及低溫的特性，因此為因應高溫量測，目前偵測 卡10所使用的材料之主要技術瓶頸大都在於電路板12及環 氧樹脂24。此外’由於物質之熱脹冷縮等特性也會導致低 溫及高溫量測時，偵測卡10之材料及探針16之結構產生物 理及化學變化，以致量測過程無法順利進行。 習知之偵測卡應用於超低溫及超高溫量測時具有以下之 缺點： (1)電路板無法承受高溫：目前偵測卡所用的電路板亦稱 為PCB板，大部分係具有玻璃纖維之聚亞胺 (polyimide)或FR-4。一般的使用溫度係介於25艺至 85°C範圍。當溫度超過85它時，將無法確保偵測卡 本身的電性仍維持如室溫一般。此外，這些高纖塑料 在長期咼溫量測下，將產生毒素，除了會危害量測人 員的身心健康外，亦會因高溫而產生變形，無法進行 量測。 (2 )針位偏移：偵測卡乃是測試機台與待測晶圓之介面， 其製作原理乃是依照待測晶圓上之晶片位置做為偵測 卡之針位，以利在同時間量測大量之元件。因此，針 位之位置的準確與否將直接影響量測水準，由於目前 偵測卡所使用的材料大多僅適用於室溫（2 5。〇至8 5 C ) ’而且每種材料都有其本身的膨脹係數，當溫度 H:\Hu\Hyg\思達科技\81229\81229.£|(^ _ 0 _ 本紙張尺度適财目a家標準(CNS) Α4規格(21GX297公釐)----—- A7 ____B7 五、發明説明（3~--- 升高或降低至材料可承受之範園外時，膨脹係數將使 各種材料產生變化，致使原先的針位水平將會嚴重偏 移。更甚者’將使探針剥落或發生彎曲，偵測卡益法 使用。此外’為符合其治具的限制（㈣。），現在傳 統所使用之探針之角度大多為1〇3。。#溫度升高或 降低時，此一角度將會是導致針位偏移、探針受損更 加嚴重。 【發明内容】 本發明之目的料決上述之問題而提供一種可應用於超 低溫及高溫（-120¾至4 5 0 °C )半導體測試之偵測卡，其 係利用加壓空氣調節技術將熱量導入或導出偵測卡，以達 成調節溫度之功能。 為達成上述目的並避免習知技藝之缺點，本發明提供一 種可應用於超低溫及高溫（_丨2 〇它至4 5 〇)半導體測試 (偵測卡，其包含一電路板、一支撐物設置於該電路板表 面、至少一探針以一黏著物固定在該支撐物上、一蓋子固 設於該電路板上及至少一流動線路設置在該電路板及該蓋 子形成之空間中。藉由將一流體導入該流動線路中形成流 動迴路以達成調節溫度功能。本發明係利用加壓空氣（或 氮氣）循環技術將熱量導入或導出偵測卡，以達成調節溫 度之功能’進而確保偵測卡元件之物理性質及化學性質不 會過度變化，以實現偵測卡應用於超低溫及超高溫（-12〇 °C至4 5 0 °C )量測。 相較於習知技藝，本發明具有下列之特點及優點： -7- H:\Hu\Hyg\ 思達科技\81229\81229.doc 本紙張尺度適财®國冢標準(CNS) A4規格_(21〇X297公爱) (1 )本發明 < 加壓流體調節設計利用壓力將流體導入己設 计好 < 空氣迴路中，藉由空氣的循環來調節偵測卡之 電路板、環狀支撐物、環氧樹脂黏著物及探針的溫 度。除了將偵測卡之溫度維持在材料本身所能承受的 教圍内’本發明進一步藉由溫度的控制，降低材料因 /姐度、交化產生之熱脹冷縮所導致之物性或化性變化。 (2)本發明將探針本身之角度加大為135至18〇。範圍，及 將裱狀支撐物之角度改變為i丨。至7 5。範園。不但增 加晶圓晶座與環狀支撐物之距離以減輕溫度變化的影 響，更有效地解決了在高溫或低溫量測時偵測卡最常 遇到的滑針問題，即針位水平偏移的現象。 【實施方式】 本發明將在此參考圖式更加詳細地說明，其中較佳實施 例將出現在下列之敘述中。然而，本發明可以許多不同形 式具體化，且應不限於較佳實施例所揭示者。更確切地 說，這些較佳實施例的提供僅係用以使本發明之揭示更加 充整及徹底，且將完全地表達本發明之範圍給熟悉該項技 藝者。在圖式中，元件的厚度係為了清楚表達而特別地誇 大叩瞭解當談論一元件（例如一電路板、導管或探針） ’’在另一兀件上”時，其可為直接在該另一元件上，也可以 具有介於中間的元件存在。相對地，當談論到一元件係，， 直接在”另一元件上時，則沒有任何介於中間的元件存 在。 圖4為本發明之偵測卡4〇之俯視圖。如圖4所示，偵測卡 H:\Hu\Hyg\ 思達科技\81229\81229. doc 40包含電路板42、設置在電路板42上之環狀支撐物44、 ★固定在環狀支撐物上之探針46、電連接於探針以末端之導 $ 4 8，及设置在電路板4 2上之空氣流動線路$ 〇 (例如導 :)，其中電路板4 2及環狀支撐物4 4係可耐高溫之陶瓷材 =。流動線路50包含二個流體入口 54及複數個朝向環狀支 ‘物4 4之開口 5 2，且流動線路5 〇環繞支撐物4 4、探針w 及導線4 8。 圖5係本發明之偵測卡4 〇應用於測試半導體晶圓8 6之剖 视圖。如圖5所示，電路板42具有中心開口 54，供操作者 目視偵測卡4 0之探計4 6與半導體晶圓8 6之相對位置。探 針46係以黏著物60 (例如環氧樹脂）固定於環狀支撐物 44上，並經由通道56電連接於電路板々^背面之導線58。 本發明之偵測卡40亦可包含蓋子7〇，而空氣流動線路5〇 亦可設置於電路板42及蓋子7〇所形成之空間中（例如設置 於電路板42上或是設置於蓋子7〇上）。蓋子7〇具有開口 7 2，供奴針4 6與半導體晶圓8 6之接觸。半導體晶圓8 6係 女置於晶圓基座8 8上，半導體晶圓8 6包含複數個晶片 92，而晶圓基座88具有加熱裝置9〇。當進行測試時，晶 圓基座8 8將上升使得探針4 6之尖端與晶片9 2之接墊9 4接 觸。 本發明係利用加壓空氣調節技術將熱量導出偵測卡4 〇， 達成調節溫度之功能並實現偵測卡4〇應用於半導體之高溫 測試。藉由將加壓之空氣經由流體入口 5 4導入偵測卡4 〇， 而S氣將沿著流動線路5 〇之開口吹向環狀支撐物4 4，再由 H:\Hu\Hyg\思達科技\81229\81229.doc ^ g 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公^---- 594899 五、發明説明（6 盍子7 0與黏著物6 0形成之間隙7 4將熱量導出偵測卡4 〇。 如此，在量測半導體晶圓80的過程中，即使加熱裝置9〇將 晶圓基座88加熱至45〇t：，本發明藉由調整空氣之流速及 溫度，亦可使得偵測卡4 0之溫度保持在一特定之範圍内， 進而確保偵測卡40上元件之物理性質（例如探針之熱膨脹 現象）及化學性質（例如環氧樹脂之劣化）不會發生過度 變化，以實現偵測卡應用於超高溫4 5 〇它之半導體量測。 典型上，導入偵測卡4 0之空氣之溫度約為2 5 t，而壓力係 介於0至70 kpa範圍。此外，當偵測卡4〇用於超低溫度之 量測時，導入偵測卡4 0之流體為攝氏〇 t的乾燥氮氣 (nitrogen)，以調節偵測卡40之溫度。如此，偵測卡4〇之量 測溫度即可達-1 2 0 °C。 圖6係本發明之偵測卡4 〇之局部放大圖。如圖6所示，導 入偵測卡40之流體經由開口 52在蓋子7〇與電路板42形成 之雙間中流動（如箭頭所示），流體與導線4 8、痴著物 60、探針46、環狀支撐物44及電路板42進行熱交換，再 經由盍子7 0與黏著物6 0形成之間隙7 4流出偵測卡4 〇，完 成偵測卡4 0之溫度調節。此外，環狀支撐物4 4具有斜面 76，而探針係以黏著物60固定在斜面76上。斜面6〇與電 路板42之表面的夾角84係介於11。至75。，較佳之夾角84 為4 5 °。探針4 6可採用由懸臂7 8及尖端8 0構成，懸臂7 8 與尖端80形成一夾角82，而夾角係介於135。至18〇◦範 圍。此外本發明之探測卡亦可採用一體成形，即探針之懸 月與尖^之夾角為180。。藉由將固定探針46之環狀支撑 H:\Hu\Hyg\思達科技\81229\81229.doc _ 10 _ 本紙張尺度適财a a家標準(CNS) _A4規格(伽㈣7公董） 五、發明説明（ 物44的傾斜角度改變為"。至75。，再將探針46本身的角 度也調整為135至180。，# #、瓜& ^ +母的角 k成滑針現象的原因將受到松 制。如此，材料因鼽膨勝… 二 ”、、唇脹現象所導至之位移降低為丨/2， 有效解決了在高溫量測時針位偏移的現象。 相較於習知技藝，本發明具有下列之特點及優點： (1 )本發明《加壓流體調節設計利用壓力將流體導入己也 計好之流體迴路中，藉由流體的循環來調節_卡2 電路板、環狀支撐物、環氧樹脂及探針的溫度。除了 將偵測卡之溫度維持在材料本身所能承受的範園内'， 本發明進-步藉由溫度的控制，減低材料因溫度變化 產生之熱脹冷縮所導致之物性或化性變化。 (2)本發明將探針本身之角度加大為135至18〇。，及將環 狀支撐物之角度改變為"。至75。。不但增加晶圓： 座與環狀支撐物之距離以減輕溫度變化的影響，更有 效地解決了 S高溫或低溫量須4時偵㈣卡最常遇到的滑 針問題，即針位水平偏移的現象。 本發明之技術内容及技術特點巳揭示如上，然而熟悉本 項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替換及修#。因此，本發明之保護範圍 應不限於實施例所揭示者’而應包括各種不背離本發明之 替換及修飾，並為本發明之申請專利範圍所涵蓋。 【圖式之簡單說明】 圖1係習知之半導體偵測卡之俯視圖； 圖2係習知半導體偵測卡應用於測試半導體晶圓之剖視 H:\Hu\Hyg\ 思達科技\81229\81229. doc -11 - 594899 A7 B7 五、發明説明（8 ) 圖； 圖3係圖2之局部放大圖， 圖4係本發明之半導體偵測卡之俯視圖； 圖5係本發明之半導體偵測卡應用於測試半導體晶圓之 剖視圖；及 圖6係本發明债測卡之局部放大圖。 元件符號說明 10 習知之偵測卡 1 2 電路板 14 支撐物 16 探針 20 通道 22 開口 24 黏著物 26 導線 28 斜面 3 0 半導體晶圓 32 晶圓基座 34 加熱裝置 3 6 晶片 3 8 接墊 40 偵測卡 42 電路板 44 環狀支撐物 46 探針 50 流動線路 52 開口 54 流體入口 56 通道 5 8 導線 60 黏著物 70 蓋子 72 開口 74 間隙 76 斜面 7 8 懸臂 80 尖端 82 夾角 84 爽角 86 半導體晶圓 8 8 晶圓基座 H:\Hu\Hyg\ 思達科技\81229\81229.doc -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 594899 A7 B7 92 晶片 -13 - 五、發明説明（9 ) 90 加熱裝置 94 接墊 H:\Hu\Hyg\ 思達科技\81229\81229. doc 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)The probe 16 is fixed to the ring-shaped support ". Of the materials used in the conventional test card, the materials of the probe 16 and the support 14 are mostly (or chicken alloy) and ceramics. Since the town (or baht alloy) & ceramic materials have high temperature and low temperature resistance characteristics, in order to respond to high temperature measurement, the main technical bottlenecks of the materials used in the detection card 10 are mostly the circuit board 12 and the ring. Oxygen resin 24. In addition, due to the thermal expansion and contraction of the substance, physical and chemical changes in the material of the detection card 10 and the structure of the probe 16 may occur during low-temperature and high-temperature measurement, so that the measurement process cannot be performed smoothly. Conventional detection cards have the following disadvantages when applied to ultra-low temperature and ultra-high temperature measurement: (1) Circuit boards cannot withstand high temperatures: The circuit boards used by current detection cards are also called PCB boards, and most of them are made of glass fiber. Polyimide or FR-4. Typical operating temperatures range from 25 ° C to 85 ° C. When the temperature exceeds 85 ° C, it will not be able to ensure that the electrical properties of the detection card itself remain as room temperature. In addition, these high-fiber plastics will produce toxins under long-term temperature measurement. In addition to harming the physical and mental health of the measurement personnel, they will also be deformed due to high temperature and cannot be measured. (2) Needle position deviation: The detection card is the interface between the test machine and the wafer to be tested. The manufacturing principle is based on the wafer position on the wafer to be tested as the needle position of the detection card. Measure a large number of components at the same time. Therefore, the accuracy of the needle position will directly affect the measurement level, because most of the materials used in current detection cards are only suitable for room temperature (25.0 to 8 5 C) 'and each material has its own Expansion coefficient itself, when the temperature H: \ Hu \ Hyg \ SIDA Technology \ 81229 \ 81229. £ | (^ _ 0 _ This paper size is suitable for financial standards a home standard (CNS) A4 specification (21GX297 mm)- ----- A7 ____B7 V. Explanation of the invention (3 ~ --- When it is raised or lowered outside the range that the material can withstand, the expansion coefficient will cause changes in various materials, causing the original needle position to be seriously shifted What's more, 'the probe will peel off or bend, and the detection card method is used. In addition,' in order to meet the limitations of its fixture (㈣.), The angle of the traditionally used probes is currently mostly 103. . # When the temperature increases or decreases, this angle will cause the needle position to shift and the probe to be damaged more seriously. [Summary of the invention] The object of the present invention is to solve the above problems and provide an applicable to ultra-low temperature and high temperature. (-120¾ to 450 ° C) Detection card for semiconductor testing, which uses pressurized air conditioning technology Introduce or export heat to the detection card to achieve the function of adjusting temperature. In order to achieve the above purpose and avoid the shortcomings of the conventional technology, the present invention provides a semiconductor that can be applied to ultra-low temperature and high temperature (_ 丨 20 to 4 5) Test (detection card, which includes a circuit board, a support provided on the surface of the circuit board, at least one probe fixed to the support with an adhesive, a cover fixed to the circuit board, and at least one flow The circuit is arranged in the space formed by the circuit board and the cover. A flow circuit is formed by introducing a fluid into the flow circuit to achieve a temperature adjustment function. The present invention uses a pressurized air (or nitrogen) circulation technology to introduce heat into or Export the detection card to achieve the function of adjusting the temperature ', so as to ensure that the physical properties and chemical properties of the detection card components will not be changed excessively, so that the detection card is applied to ultra-low temperature and ultra-high temperature (-12 ° C to 4 5 0 ° C) Measurement. Compared with the conventional technique, the present invention has the following characteristics and advantages: -7- H: \ Hu \ Hyg \ Star Technology \ 81229 \ 81229.doc (CNS) A4 specifications_ (21〇297297) (1) The present invention < pressurized fluid regulation design uses pressure to introduce fluid into the designed < air circuit, and adjust the detection card by air circulation The temperature of the circuit board, ring support, epoxy adhesive and probe. In addition to maintaining the temperature of the detection card within the tolerance range of the material itself, the present invention further reduces the material by controlling the temperature. Changes in physical properties or chemical properties caused by thermal expansion and contraction due to / sexuality and crossover. (2) The present invention increases the angle of the probe itself to 135 to 180. The range, and The angle changes to i 丨. To 7 5. Fan Yuan. Not only increases the distance between the wafer base and the ring-shaped support to reduce the effect of temperature changes, but also effectively solves the problem of the slip pin most commonly encountered by the detection card during high or low temperature measurement, that is, the horizontal offset of the needle position The phenomenon. [Embodiment] The present invention will be described in more detail with reference to the drawings, among which preferred embodiments will appear in the following description. However, the invention may be embodied in many different forms and should not be limited to those disclosed in the preferred embodiments. Rather, these preferred embodiments are provided merely to make the disclosure of the present invention more complete and thorough, and to fully express the scope of the present invention to those skilled in the art. In the drawings, the thickness of an element is exaggerated for clarity. It is understood that when talking about an element (such as a circuit board, catheter, or probe) `` on another element, '' it can be There may also be intervening elements on another element. In contrast, when talking about an element system directly on "the other element, no intervening elements exist." FIG. 4 is a top view of the detection card 40 of the present invention. As shown in Figure 4, the detection card H: \ Hu \ Hyg \ Star Technology \ 81229 \ 81229. Doc 40 contains the circuit board 42, a ring-shaped support 44 provided on the circuit board 42, and it is fixed to the ring-shaped support. The probe 46 on the object, the guide $ 48 which is electrically connected to the end of the probe, and the air flow line $ 0 (for example, the guide) provided on the circuit board 42, wherein the circuit board 42 and the ring-shaped support 4 4 series of high temperature resistant ceramics =. The flow circuit 50 includes two fluid inlets 54 and a plurality of openings 5 2 facing the ring-shaped branch ′ object 4 4, and the flow circuit 50 surrounds the support 4 4, the probe w and the lead 48. FIG. 5 is a cross-sectional view of the detection card 40 of the present invention applied to test a semiconductor wafer 86. As shown in FIG. 5, the circuit board 42 has a central opening 54 for the operator to visually detect the relative position of the probe 46 of the card 40 and the semiconductor wafer 86. The probe 46 is fixed to the ring-shaped support 44 with an adhesive 60 (such as epoxy resin), and is electrically connected to a wire 58 on the back of the circuit board 通道 through a channel 56. The detection card 40 of the present invention may also include a cover 70, and the air flow circuit 50 may also be disposed in a space formed by the circuit board 42 and the cover 70 (for example, on the circuit board 42 or on the cover 7). 〇 上). The cover 70 has an opening 72 for the slave pins 46 to contact the semiconductor wafer 86. The semiconductor wafer 86 is placed on a wafer base 88. The semiconductor wafer 86 includes a plurality of wafers 92, and the wafer base 88 has a heating device 90. When the test is performed, the wafer base 8 8 will rise so that the tip of the probe 46 is in contact with the pad 9 4 of the wafer 92. The invention uses pressurized air conditioning technology to direct the heat out of the detection card 40 to achieve the function of adjusting temperature and realize the detection card 40 to be applied to the high temperature test of semiconductors. By introducing the pressurized air into the detection card 4 through the fluid inlet 54, the S gas will be blown along the opening of the flow line 50 toward the ring-shaped support 4 4 and then H: \ Hu \ Hyg \ think达 科技 \ 81229 \ 81229.doc ^ g This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 public ^^ 594899) V. Description of the invention (6 Gap 70 and the gap formed by the adhesive 60 7 4 Leads the heat out of the detection card 4 0. Thus, in the process of measuring the semiconductor wafer 80, even if the heating device 90 heats the wafer base 88 to 4500 t :, the present invention adjusts the flow rate of air by And temperature can also keep the temperature of the detection card 40 within a specific range, thereby ensuring the physical properties of the components on the detection card 40 (such as the thermal expansion of the probe) and chemical properties (such as the degradation of epoxy resin). ) No excessive change will occur, so that the detection card is used for semiconductor measurement at ultra-high temperature 4 5 0. Typically, the temperature of the air introduced into the detection card 40 is about 2 5 t, and the pressure is between 0 and 0. Up to 70 kpa. In addition, when the detection card 40 is used for ultra-low temperature measurement, the detection card 40 is imported. The fluid is dry nitrogen at 0 ° C to adjust the temperature of the detection card 40. In this way, the measurement temperature of the detection card 40 can reach -120 ° C. Figure 6 is the detection of the present invention A partial enlarged view of the card 4 〇. As shown in FIG. 6, the fluid introduced into the detection card 40 flows through the opening 52 in the double space formed by the cover 70 and the circuit board 42 (as shown by the arrow), and the fluid and the wire 4 8 , The obsession 60, the probe 46, the ring-shaped support 44, and the circuit board 42 perform heat exchange, and then flow out of the detection card 4 0 through the gap 7 4 formed by the mule 70 and the adhesive 60, and the detection card is completed The temperature adjustment of 40. In addition, the ring-shaped support 44 has an inclined surface 76, and the probe is fixed on the inclined surface 76 with an adhesive 60. The angle 84 between the inclined surface 60 and the surface of the circuit board 42 is between 11. to 75. The preferred angle 84 is 45 °. The probe 46 can be composed of a cantilever 7 8 and a tip 80, and the cantilever 7 8 and the tip 80 form an angle 82, and the angle is between 135 and 18 °. Range. In addition, the detection card of the present invention can also be integrated, that is, the angle between the moon and the tip of the probe is 180. By fixing the ring of the probe 46 Support H: \ Hu \ Hyg \ Sida Technology \ 81229 \ 81229.doc _ 10 _ This paper size is suitable for aa home standards (CNS) _A4 specifications (Gallium 7 public directors) 5. Description of the invention (the tilt angle of object 44 is changed From "quote to 75", the angle of the probe 46 itself is also adjusted to 135 to 180. The cause of the slippery phenomenon of ##, melon & ^ + female will be loosened. In this way, the material's displacement due to bulging wins ... ", and the displacement caused by the lip swelling phenomenon is reduced to 丨 / 2, which effectively solves the phenomenon of needle position deviation during high temperature measurement. Compared with conventional techniques, the present invention has The following features and advantages: (1) The "pressurized fluid regulation design of the present invention uses pressure to introduce fluid into a fluid circuit that has also been calculated, and is adjusted by the circulation of the fluid. Card 2 Circuit board, ring support, ring The temperature of the oxygen resin and the probe. In addition to maintaining the temperature of the detection card within the range that the material itself can withstand, the present invention further reduces the thermal expansion and contraction of the material due to temperature changes by controlling the temperature. (2) The present invention increases the angle of the probe itself to 135 to 180 °, and changes the angle of the ring-shaped support to " to 75. Not only increases the wafer: The distance between the base and the ring-shaped support to reduce the effect of temperature changes, more effectively solve the problem of slipping needles, which is the most commonly encountered problem when the high-temperature or low-temperature amount of 4 hours detection card, that is, the horizontal displacement of the needle position. The technical content and technical characteristics of the invention However, those skilled in the art may still make various substitutions and modifications without departing from the spirit of the present invention based on the teaching and disclosure of the present invention. Therefore, the scope of protection of the present invention should not be limited to those disclosed in the embodiments, but should be It includes various replacements and modifications that do not depart from the present invention, and is covered by the scope of patent application for the present invention. [Simplified description of the drawings] FIG. 1 is a top view of a conventional semiconductor detection card; FIG. 2 is a conventional semiconductor detection card Sectional view applied to testing semiconductor wafers H: \ Hu \ Hyg \ Star Technology \ 81229 \ 81229. Doc -11-594899 A7 B7 V. Description of the invention (8) Figure; Figure 3 is a partial enlarged view of Figure 2. Fig. 4 is a top view of the semiconductor detection card of the present invention; Fig. 5 is a sectional view of the semiconductor detection card of the present invention applied to test a semiconductor wafer; and Fig. 6 is a partial enlarged view of the debt detection card of the present invention. Known detection card 1 2 Circuit board 14 Support 16 Probe 20 Channel 22 Opening 24 Adhesive 26 Wire 28 Bevel 3 0 Semiconductor wafer 32 Wafer base 34 Heating device 3 6 Wafer 3 8 Pad 40 Detection Card 42 Circuit board 44 Ring-shaped support 46 Probe 50 Flow line 52 Opening 54 Fluid inlet 56 Channel 5 8 Lead 60 Adhesive 70 Cover 72 Opening 74 Gap 76 Bevel 7 8 Cantilever 80 Tip 82 Angle 82 Slight angle 86 Semiconductor wafer 8 8 Wafer base H: \ Hu \ Hyg \ Star Technology \ 81229 \ 81229.doc -12- This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 594899 A7 B7 92 Wafer-13- V. Description of the invention (9) 90 Heating device 94 Pad H: \ Hu \ Hyg \ Sida Technology \ 81229 \ 81229. Doc This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)