JP2015135927A - 半導体装置、半導体モジュール、および電子回路 - Google Patents

半導体装置、半導体モジュール、および電子回路 Download PDF

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JP2015135927A
JP2015135927A JP2014007506A JP2014007506A JP2015135927A JP 2015135927 A JP2015135927 A JP 2015135927A JP 2014007506 A JP2014007506 A JP 2014007506A JP 2014007506 A JP2014007506 A JP 2014007506A JP 2015135927 A JP2015135927 A JP 2015135927A
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Prior art keywords
electrode
semiconductor region
switching element
wiring
region
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JP2014007506A
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JP2015135927A5 (enExample
Inventor
達也 西脇
Tatsuya Nishiwaki
達也 西脇
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Toshiba Corp
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Toshiba Corp
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Priority to JP2014007506A priority Critical patent/JP2015135927A/ja
Priority to CN201410299803.1A priority patent/CN104795393A/zh
Priority to US14/327,001 priority patent/US20150207407A1/en
Publication of JP2015135927A publication Critical patent/JP2015135927A/ja
Publication of JP2015135927A5 publication Critical patent/JP2015135927A5/ja
Abandoned legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
JP2014007506A 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路 Abandoned JP2015135927A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014007506A JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路
CN201410299803.1A CN104795393A (zh) 2014-01-20 2014-06-27 半导体装置、半导体模块以及电子电路
US14/327,001 US20150207407A1 (en) 2014-01-20 2014-07-09 Semiconductor Device, Semiconductor Module, and Electronic Circuit

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JP2014007506A JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路

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JP2015135927A true JP2015135927A (ja) 2015-07-27
JP2015135927A5 JP2015135927A5 (enExample) 2016-04-14

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US (1) US20150207407A1 (enExample)
JP (1) JP2015135927A (enExample)
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162910A (ja) * 2016-03-08 2017-09-14 国立大学法人東京工業大学 半導体装置および測定装置
JP2017174863A (ja) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 半導体装置
US10566452B2 (en) 2018-03-19 2020-02-18 Kabushiki Kaisha Toshiba Semiconductor device and control device
JP2023112319A (ja) * 2022-02-01 2023-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置
JP2024133724A (ja) * 2020-08-12 2024-10-02 富士電機株式会社 半導体モジュール
WO2025150446A1 (ja) * 2024-01-12 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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US9859238B2 (en) * 2014-06-26 2018-01-02 Mitsubishi Electric Corporation Semiconductor device comprising regions of different current drive capabilities
DE102016102493B3 (de) * 2016-02-12 2017-07-20 Infineon Technologies Ag Halbleitervorrichtung mit einem temperatursensor, temperatursensor und verfahren zum herstellen einer halbleitervorrichtung mit einem temperatursensor
US10811985B2 (en) 2016-08-26 2020-10-20 General Electric Company Power conversion system and an associated method thereof
JP7352437B2 (ja) * 2019-10-25 2023-09-28 株式会社東芝 半導体装置
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法

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US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
JP4610199B2 (ja) * 2004-01-14 2011-01-12 ルネサスエレクトロニクス株式会社 Ｄｃ−ｄｃコンバータ用半導体集積回路及びｄｃ−ｄｃコンバータ
JP5547429B2 (ja) * 2009-06-19 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置
CN203118955U (zh) * 2012-12-19 2013-08-07 中兴通讯股份有限公司 一种晶体管及晶体管的散热装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162910A (ja) * 2016-03-08 2017-09-14 国立大学法人東京工業大学 半導体装置および測定装置
JP2017174863A (ja) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 半導体装置
US10566452B2 (en) 2018-03-19 2020-02-18 Kabushiki Kaisha Toshiba Semiconductor device and control device
JP2024133724A (ja) * 2020-08-12 2024-10-02 富士電機株式会社 半導体モジュール
JP7768304B2 (ja) 2020-08-12 2025-11-12 富士電機株式会社 半導体モジュール
JP2023112319A (ja) * 2022-02-01 2023-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7742782B2 (ja) 2022-02-01 2025-09-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置
WO2025150446A1 (ja) * 2024-01-12 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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