CN104795393A - 半导体装置、半导体模块以及电子电路 - Google Patents

半导体装置、半导体模块以及电子电路 Download PDF

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Publication number
CN104795393A
CN104795393A CN201410299803.1A CN201410299803A CN104795393A CN 104795393 A CN104795393 A CN 104795393A CN 201410299803 A CN201410299803 A CN 201410299803A CN 104795393 A CN104795393 A CN 104795393A
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electrode
semiconductor regions
switching element
semiconductor
wiring
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CN201410299803.1A
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Chinese (zh)
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西脇达也
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Toshiba Corp
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Toshiba Corp
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
CN201410299803.1A 2014-01-20 2014-06-27 半导体装置、半导体模块以及电子电路 Pending CN104795393A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-007506 2014-01-20
JP2014007506A JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路

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US (1) US20150207407A1 (enExample)
JP (1) JP2015135927A (enExample)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107086247A (zh) * 2016-02-12 2017-08-22 英飞凌科技股份有限公司 包括温度传感器的半导体装置及其制造方法和电路
CN109997304A (zh) * 2016-08-26 2019-07-09 通用电气公司 功率转换系统及其相关方法

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DE112014006764B4 (de) * 2014-06-26 2022-09-01 Mitsubishi Electric Corporation Halbleitervorrichtung
JP2017162910A (ja) * 2016-03-08 2017-09-14 国立大学法人東京工業大学 半導体装置および測定装置
JP6659418B2 (ja) * 2016-03-18 2020-03-04 トヨタ自動車株式会社 半導体装置
JP6864640B2 (ja) 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
JP7352437B2 (ja) * 2019-10-25 2023-09-28 株式会社東芝 半導体装置
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法
JP7524665B2 (ja) * 2020-08-12 2024-07-30 富士電機株式会社 半導体装置
JP7742782B2 (ja) * 2022-02-01 2025-09-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置
WO2025150446A1 (ja) * 2024-01-12 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
CN1641986A (zh) * 2004-01-14 2005-07-20 恩益禧电子股份有限公司 Dc－dc转换器用半导体集成电路
US20100321846A1 (en) * 2009-06-19 2010-12-23 Nec Electronics Corporation Semiconductor apparatus and temperature detection circuit
CN203118955U (zh) * 2012-12-19 2013-08-07 中兴通讯股份有限公司 一种晶体管及晶体管的散热装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
CN1641986A (zh) * 2004-01-14 2005-07-20 恩益禧电子股份有限公司 Dc－dc转换器用半导体集成电路
US20100321846A1 (en) * 2009-06-19 2010-12-23 Nec Electronics Corporation Semiconductor apparatus and temperature detection circuit
CN203118955U (zh) * 2012-12-19 2013-08-07 中兴通讯股份有限公司 一种晶体管及晶体管的散热装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107086247A (zh) * 2016-02-12 2017-08-22 英飞凌科技股份有限公司 包括温度传感器的半导体装置及其制造方法和电路
CN107086247B (zh) * 2016-02-12 2021-01-26 英飞凌科技股份有限公司 包括温度传感器的半导体装置及其制造方法和电路
CN109997304A (zh) * 2016-08-26 2019-07-09 通用电气公司 功率转换系统及其相关方法
US10811985B2 (en) 2016-08-26 2020-10-20 General Electric Company Power conversion system and an associated method thereof

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JP2015135927A (ja) 2015-07-27

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