JP2015133424A5 - - Google Patents

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Publication number
JP2015133424A5
JP2015133424A5 JP2014004537A JP2014004537A JP2015133424A5 JP 2015133424 A5 JP2015133424 A5 JP 2015133424A5 JP 2014004537 A JP2014004537 A JP 2014004537A JP 2014004537 A JP2014004537 A JP 2014004537A JP 2015133424 A5 JP2015133424 A5 JP 2015133424A5
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JP
Japan
Prior art keywords
forming
upper electrode
metal layer
refractory metal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014004537A
Other languages
English (en)
Japanese (ja)
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JP2015133424A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014004537A priority Critical patent/JP2015133424A/ja
Priority claimed from JP2014004537A external-priority patent/JP2015133424A/ja
Priority to US14/595,996 priority patent/US20150200243A1/en
Publication of JP2015133424A publication Critical patent/JP2015133424A/ja
Publication of JP2015133424A5 publication Critical patent/JP2015133424A5/ja
Priority to US15/599,743 priority patent/US20170256605A1/en
Pending legal-status Critical Current

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JP2014004537A 2014-01-14 2014-01-14 電子部品の製造方法 Pending JP2015133424A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014004537A JP2015133424A (ja) 2014-01-14 2014-01-14 電子部品の製造方法
US14/595,996 US20150200243A1 (en) 2014-01-14 2015-01-13 Method for fabricating electronic device
US15/599,743 US20170256605A1 (en) 2014-01-14 2017-05-19 Method for fabricating electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014004537A JP2015133424A (ja) 2014-01-14 2014-01-14 電子部品の製造方法

Publications (2)

Publication Number Publication Date
JP2015133424A JP2015133424A (ja) 2015-07-23
JP2015133424A5 true JP2015133424A5 (enExample) 2017-02-16

Family

ID=53522031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014004537A Pending JP2015133424A (ja) 2014-01-14 2014-01-14 電子部品の製造方法

Country Status (2)

Country Link
US (2) US20150200243A1 (enExample)
JP (1) JP2015133424A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10008559B2 (en) * 2016-03-24 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Etching process control in forming MIM capacitor
JP6717520B2 (ja) 2016-07-05 2020-07-01 住友電工デバイス・イノベーション株式会社 コンデンサの製造方法
JP6880451B2 (ja) * 2017-08-07 2021-06-02 住友電工デバイス・イノベーション株式会社 キャパシタ構造の作製方法
JP2024000604A (ja) * 2022-06-21 2024-01-09 住友電工デバイス・イノベーション株式会社 電子デバイス

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521435A (ja) * 1990-11-29 1993-01-29 Seiko Epson Corp 半導体装置
JPH05102330A (ja) * 1991-06-25 1993-04-23 Fujitsu Ltd 半導体装置の製造方法
JPH05308104A (ja) * 1992-04-30 1993-11-19 Fujitsu Ltd 半導体装置の製造方法
US5479316A (en) * 1993-08-24 1995-12-26 Analog Devices, Inc. Integrated circuit metal-oxide-metal capacitor and method of making same
JP3324946B2 (ja) * 1996-02-22 2002-09-17 シャープ株式会社 Ｍｉｍキャパシタ及びその製造方法、並びに半導体装置及びその製造方法
DE19728474A1 (de) * 1997-07-03 1999-01-07 Siemens Ag Elektrodenanordnung
US20030025143A1 (en) * 2001-08-01 2003-02-06 Lin Benjamin Szu-Min Metal-insulator-metal capacitor and method of manufacture
US6583491B1 (en) * 2002-05-09 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having microelectronic capacitor structure fabricated therein
US20120304742A1 (en) * 2004-04-02 2012-12-06 ChipSensors Limited Integrated cmos porous sensor
EP1878809B1 (en) * 2005-04-26 2011-02-23 Mitsui Mining and Smelting Co., Ltd. ELEMENT STRUCTURE USING A Al-Ni-B ALLOY WIRING MATERIAL
US7607227B2 (en) * 2006-02-08 2009-10-27 Eastman Kodak Company Method of forming a printhead
JP4699408B2 (ja) * 2006-08-24 2011-06-08 富士通株式会社 電子デバイス及びその製造方法
JP4889512B2 (ja) * 2007-01-22 2012-03-07 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7863665B2 (en) * 2007-03-29 2011-01-04 Raytheon Company Method and structure for reducing cracks in a dielectric layer in contact with metal
CN101849289B (zh) * 2007-07-23 2014-02-26 维斯普瑞公司 制备三层梁的方法和设备
JP5395360B2 (ja) * 2008-02-25 2014-01-22 新光電気工業株式会社 電子部品内蔵基板の製造方法
JP2010021171A (ja) * 2008-07-08 2010-01-28 Renesas Technology Corp 半導体装置の製造方法およびそれに用いる半導体製造装置
US8148249B2 (en) * 2008-09-12 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabricating high-k metal gate devices
US8729666B2 (en) * 2009-09-23 2014-05-20 X-Fab Semiconductor Foundries Ag Ultra-low voltage coefficient capacitors
FR2951025B1 (fr) * 2009-10-01 2012-03-23 St Microelectronics Sa Procede d'ajustement a la fabrication d'un circuit comprenant un element resonant
JP2011228462A (ja) * 2010-04-19 2011-11-10 Taiyo Yuden Co Ltd 薄膜キャパシタ
US8815677B2 (en) * 2011-06-14 2014-08-26 Intermolecular, Inc. Method of processing MIM capacitors to reduce leakage current

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