JP2015128105A - 半導体ナノ粒子分散体、光電変換素子および撮像装置 - Google Patents

半導体ナノ粒子分散体、光電変換素子および撮像装置 Download PDF

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Publication number
JP2015128105A
JP2015128105A JP2013273094A JP2013273094A JP2015128105A JP 2015128105 A JP2015128105 A JP 2015128105A JP 2013273094 A JP2013273094 A JP 2013273094A JP 2013273094 A JP2013273094 A JP 2013273094A JP 2015128105 A JP2015128105 A JP 2015128105A
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Prior art keywords
photoelectric conversion
semiconductor
radius
conversion element
layer
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JP2013273094A
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Japanese (ja)
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JP2015128105A5 (https=
Inventor
治典 塩見
Harunori Shiomi
治典 塩見
毅隆 別所
Takeru Bessho
毅隆 別所
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013273094A priority Critical patent/JP2015128105A/ja
Priority to TW103136539A priority patent/TWI653750B/zh
Priority to US15/038,216 priority patent/US10014422B2/en
Priority to EP14828314.6A priority patent/EP3087591B1/en
Priority to PCT/JP2014/006291 priority patent/WO2015098048A1/en
Publication of JP2015128105A publication Critical patent/JP2015128105A/ja
Publication of JP2015128105A5 publication Critical patent/JP2015128105A5/ja
Priority to US16/023,515 priority patent/US10580913B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013273094A 2013-12-27 2013-12-27 半導体ナノ粒子分散体、光電変換素子および撮像装置 Pending JP2015128105A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013273094A JP2015128105A (ja) 2013-12-27 2013-12-27 半導体ナノ粒子分散体、光電変換素子および撮像装置
TW103136539A TWI653750B (zh) 2013-12-27 2014-10-22 半導體奈米粒子色散，光電轉換元件，以及影像拾取裝置
US15/038,216 US10014422B2 (en) 2013-12-27 2014-12-17 Semiconductor nanoparticle dispersion for a photoelectric conersion layer
EP14828314.6A EP3087591B1 (en) 2013-12-27 2014-12-17 Semiconductor nanoparticle dispersion, photoelectric conversion element, and image pickup device
PCT/JP2014/006291 WO2015098048A1 (en) 2013-12-27 2014-12-17 Semiconductor nanoparticle dispersion, photoelectric conversion element, and image pickup device
US16/023,515 US10580913B2 (en) 2013-12-27 2018-06-29 Semiconductor nanoparticle dispersion, a photoelectric conversion element, and an image pickup device for substantially uniform absorption edge wavelength

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013273094A JP2015128105A (ja) 2013-12-27 2013-12-27 半導体ナノ粒子分散体、光電変換素子および撮像装置

Publications (2)

Publication Number Publication Date
JP2015128105A true JP2015128105A (ja) 2015-07-09
JP2015128105A5 JP2015128105A5 (https=) 2016-03-03

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JP2013273094A Pending JP2015128105A (ja) 2013-12-27 2013-12-27 半導体ナノ粒子分散体、光電変換素子および撮像装置

Country Status (5)

Country Link
US (2) US10014422B2 (https=)
EP (1) EP3087591B1 (https=)
JP (1) JP2015128105A (https=)
TW (1) TWI653750B (https=)
WO (1) WO2015098048A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018016213A1 (ja) * 2016-07-20 2018-01-25 ソニー株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP2019102623A (ja) * 2017-11-30 2019-06-24 日本放送協会 カラー撮像素子およびその製造方法
WO2019150972A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
JPWO2020054764A1 (ja) * 2018-09-12 2021-08-30 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法
WO2021246155A1 (ja) * 2020-06-03 2021-12-09 ソニーグループ株式会社 量子ドット集合体及びその製造方法、量子ドット集合体層、並びに、撮像装置
JP2021197501A (ja) * 2020-06-17 2021-12-27 東洋インキＳｃホールディングス株式会社 光電変換素子及び光電変換層形成用組成物
WO2022234806A1 (ja) * 2021-05-07 2022-11-10 ソニーグループ株式会社 固体撮像素子

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CN108292689B (zh) * 2015-11-27 2021-07-20 京瓷株式会社 光电转换膜和光电转换装置
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10892297B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
KR102701843B1 (ko) * 2021-04-07 2024-08-30 삼성에스디아이 주식회사 잉크 조성물, 이를 이용한 막 및 디스플레이 장치

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JPH05218501A (ja) * 1992-01-31 1993-08-27 Sony Corp 不純物ドーピング方法
US20090074653A1 (en) * 2003-12-11 2009-03-19 Industrial Technology Research Institute Znx (x=s, se, te) quantum dot preparation method
JP2006228938A (ja) * 2005-02-17 2006-08-31 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子
JP2009527108A (ja) * 2006-02-13 2009-07-23 ソレクサント・コーポレイション ナノ構造層を備える光起電装置
JP2010521061A (ja) * 2007-02-26 2010-06-17 イーストマン コダック カンパニー ドープされたナノ粒子系半導体接合
JP2011528865A (ja) * 2008-07-21 2011-11-24 インヴィサージ テクノロジーズ インコーポレイテッド 安定高感度光検出器のための材料、作製機器、および方法、それにより作製される画像センサ
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
JP2012253004A (ja) * 2011-05-11 2012-12-20 Peccell Technologies Inc 色素増感型光電変換素子用光電極及びその製造方法
US20130037111A1 (en) * 2011-08-10 2013-02-14 International Business Machines Corporation Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films

Cited By (22)

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US11758743B2 (en) 2016-07-20 2023-09-12 Sony Corporation Semiconductor film and method of producing the same, photoelectric conversion element, solid-state imaging element and electronic apparatus
CN109417079B (zh) * 2016-07-20 2023-06-20 索尼公司 半导体膜及其制造方法、光电转换元件、固态成像元件和电子装置
JPWO2018016213A1 (ja) * 2016-07-20 2019-05-23 ソニー株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP2023130335A (ja) * 2016-07-20 2023-09-20 ソニーグループ株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
WO2018016213A1 (ja) * 2016-07-20 2018-01-25 ソニー株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP2022095628A (ja) * 2016-07-20 2022-06-28 ソニーグループ株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP7302688B2 (ja) 2016-07-20 2023-07-04 ソニーグループ株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP7040445B2 (ja) 2016-07-20 2022-03-23 ソニーグループ株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
JP7548369B2 (ja) 2016-07-20 2024-09-10 ソニーグループ株式会社 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置
CN109417079A (zh) * 2016-07-20 2019-03-01 索尼公司 半导体膜及其制造方法、光电转换元件、固态成像元件和电子装置
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JP2019102623A (ja) * 2017-11-30 2019-06-24 日本放送協会 カラー撮像素子およびその製造方法
JP7085337B2 (ja) 2017-11-30 2022-06-16 日本放送協会 カラー撮像素子
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WO2019150972A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置
US11903226B2 (en) 2018-01-31 2024-02-13 Sony Group Corporation Photoelectric conversion element and imaging device
US12266734B2 (en) 2018-09-12 2025-04-01 Toppan Inc. Infrared sensor and manufacturing method for the same
JPWO2020054764A1 (ja) * 2018-09-12 2021-08-30 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法
WO2021246155A1 (ja) * 2020-06-03 2021-12-09 ソニーグループ株式会社 量子ドット集合体及びその製造方法、量子ドット集合体層、並びに、撮像装置
JP7589454B2 (ja) 2020-06-17 2024-11-26 ａｒｔｉｅｎｃｅ株式会社 光電変換素子及び光電変換層形成用組成物
JP2021197501A (ja) * 2020-06-17 2021-12-27 東洋インキＳｃホールディングス株式会社 光電変換素子及び光電変換層形成用組成物
WO2022234806A1 (ja) * 2021-05-07 2022-11-10 ソニーグループ株式会社 固体撮像素子

Also Published As

Publication number Publication date
WO2015098048A1 (en) 2015-07-02
US20160293783A1 (en) 2016-10-06
US20180308994A1 (en) 2018-10-25
US10014422B2 (en) 2018-07-03
EP3087591A1 (en) 2016-11-02
TW201526218A (zh) 2015-07-01
US10580913B2 (en) 2020-03-03
TWI653750B (zh) 2019-03-11
EP3087591B1 (en) 2021-09-22

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