TWI653750B - 半導體奈米粒子色散，光電轉換元件，以及影像拾取裝置 - Google Patents

半導體奈米粒子色散，光電轉換元件，以及影像拾取裝置 Download PDF

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Publication number
TWI653750B
TWI653750B TW103136539A TW103136539A TWI653750B TW I653750 B TWI653750 B TW I653750B TW 103136539 A TW103136539 A TW 103136539A TW 103136539 A TW103136539 A TW 103136539A TW I653750 B TWI653750 B TW I653750B
Authority
TW
Taiwan
Prior art keywords
photoelectric conversion
semiconductor
radius
conversion element
semiconductor nanoparticle
Prior art date
Application number
TW103136539A
Other languages
English (en)
Chinese (zh)
Other versions
TW201526218A (zh
Inventor
Michinori Shiomi
鹽見治典
Takeru BESSHO
別所毅隆
Original Assignee
Sony Corporation
新力股份有限公司
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Publication date
Application filed by Sony Corporation, 新力股份有限公司 filed Critical Sony Corporation
Publication of TW201526218A publication Critical patent/TW201526218A/zh
Application granted granted Critical
Publication of TWI653750B publication Critical patent/TWI653750B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW103136539A 2013-12-27 2014-10-22 半導體奈米粒子色散，光電轉換元件，以及影像拾取裝置 TWI653750B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013273094A JP2015128105A (ja) 2013-12-27 2013-12-27 半導体ナノ粒子分散体、光電変換素子および撮像装置
JP2013-273094 2013-12-27

Publications (2)

Publication Number Publication Date
TW201526218A TW201526218A (zh) 2015-07-01
TWI653750B true TWI653750B (zh) 2019-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW103136539A TWI653750B (zh) 2013-12-27 2014-10-22 半導體奈米粒子色散，光電轉換元件，以及影像拾取裝置

Country Status (5)

Country Link
US (2) US10014422B2 (https=)
EP (1) EP3087591B1 (https=)
JP (1) JP2015128105A (https=)
TW (1) TWI653750B (https=)
WO (1) WO2015098048A1 (https=)

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EP3490002B1 (en) * 2016-07-20 2024-05-01 Sony Group Corporation Semiconductor film, photoelectric conversion element, solid-state imaging element, and electronic device
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10892297B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
JP7085337B2 (ja) * 2017-11-30 2022-06-16 日本放送協会 カラー撮像素子
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
JPWO2019150972A1 (ja) * 2018-01-31 2021-02-12 ソニー株式会社 光電変換素子および撮像装置
WO2020054764A1 (ja) * 2018-09-12 2020-03-19 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法
JP2021190635A (ja) * 2020-06-03 2021-12-13 ソニーグループ株式会社 量子ドット集合体及びその製造方法、量子ドット集合体層、並びに、撮像装置
JP7589454B2 (ja) * 2020-06-17 2024-11-26 ａｒｔｉｅｎｃｅ株式会社 光電変換素子及び光電変換層形成用組成物
KR102701843B1 (ko) * 2021-04-07 2024-08-30 삼성에스디아이 주식회사 잉크 조성물, 이를 이용한 막 및 디스플레이 장치
JP2022172951A (ja) * 2021-05-07 2022-11-17 ソニーグループ株式会社 固体撮像素子

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JP3405099B2 (ja) 1996-11-27 2003-05-12 松下電器産業株式会社 カラーセンサ
US7005229B2 (en) * 2002-10-02 2006-02-28 3M Innovative Properties Company Multiphoton photosensitization method
WO2004053938A2 (en) * 2002-12-09 2004-06-24 Pixelligent Technologies Llc Programmable photolithographic mask based on nano-sized semiconductor particles
TWI242539B (en) 2003-12-11 2005-11-01 Ind Tech Res Inst ZnX (X=S,Se,Te) quantum dots preparation method
JP2006228938A (ja) * 2005-02-17 2006-08-31 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子
JP2006245285A (ja) 2005-03-03 2006-09-14 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子
WO2007095386A2 (en) * 2006-02-13 2007-08-23 Solexant Corporation Photovoltaic device with nanostructured layers
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JP5365221B2 (ja) 2009-01-29 2013-12-11 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
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Also Published As

Publication number Publication date
WO2015098048A1 (en) 2015-07-02
JP2015128105A (ja) 2015-07-09
US20160293783A1 (en) 2016-10-06
US20180308994A1 (en) 2018-10-25
US10014422B2 (en) 2018-07-03
EP3087591A1 (en) 2016-11-02
TW201526218A (zh) 2015-07-01
US10580913B2 (en) 2020-03-03
EP3087591B1 (en) 2021-09-22

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