JP2015119137A - 面発光レーザーおよび原子発振器 - Google Patents

面発光レーザーおよび原子発振器 Download PDF

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Publication number
JP2015119137A
JP2015119137A JP2013263458A JP2013263458A JP2015119137A JP 2015119137 A JP2015119137 A JP 2015119137A JP 2013263458 A JP2013263458 A JP 2013263458A JP 2013263458 A JP2013263458 A JP 2013263458A JP 2015119137 A JP2015119137 A JP 2015119137A
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Japan
Prior art keywords
emitting laser
layer
resin layer
strain
surface emitting
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Pending
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JP2013263458A
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English (en)
Japanese (ja)
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JP2015119137A5 (https=
Inventor
金子　剛
Takeshi Kaneko
剛 金子
哲朗 西田
Tetsuro Nishida
哲朗 西田
祐司 倉知
Yuji Kurachi
祐司 倉知
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Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2013263458A priority Critical patent/JP2015119137A/ja
Priority to CN201410779785.7A priority patent/CN104734012B/zh
Priority to US14/573,293 priority patent/US9360845B2/en
Publication of JP2015119137A publication Critical patent/JP2015119137A/ja
Priority to US15/148,065 priority patent/US10103515B2/en
Publication of JP2015119137A5 publication Critical patent/JP2015119137A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
    • G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18352—Mesa with inclined sidewall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ecology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Semiconductor Lasers (AREA)
JP2013263458A 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器 Pending JP2015119137A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013263458A JP2015119137A (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器
CN201410779785.7A CN104734012B (zh) 2013-12-20 2014-12-16 面发光激光器以及原子振荡器
US14/573,293 US9360845B2 (en) 2013-12-20 2014-12-17 Vertical cavity surface emitting laser and atomic oscillator
US15/148,065 US10103515B2 (en) 2013-12-20 2016-05-06 Vertical cavity surface emitting laser and atomic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013263458A JP2015119137A (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器

Publications (2)

Publication Number Publication Date
JP2015119137A true JP2015119137A (ja) 2015-06-25
JP2015119137A5 JP2015119137A5 (https=) 2017-02-02

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ID=53401148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013263458A Pending JP2015119137A (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器

Country Status (3)

Country Link
US (2) US9360845B2 (https=)
JP (1) JP2015119137A (https=)
CN (1) CN104734012B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119145A (ja) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
US10326256B2 (en) 2016-08-29 2019-06-18 Seiko Epson Corporation Surface emitting laser and atomic oscillator

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6274404B2 (ja) * 2013-12-20 2018-02-07 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
KR102396332B1 (ko) * 2015-09-22 2022-05-12 삼성전자주식회사 Led 디스플레이용 미세간격 코팅부재 및 이를 이용한 코팅방법
US10268163B2 (en) * 2016-10-19 2019-04-23 Ricoh Company, Ltd. Atomic oscillator and method for manufacturing atomic oscillator
JP2019040953A (ja) * 2017-08-23 2019-03-14 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP2021166272A (ja) * 2020-04-08 2021-10-14 住友電気工業株式会社 面発光レーザおよびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003008142A (ja) * 2001-06-26 2003-01-10 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
US6570905B1 (en) * 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
JP2005252240A (ja) * 2004-02-04 2005-09-15 Fuji Xerox Co Ltd 垂直共振器型面発光半導体レーザ装置
JP2006019498A (ja) * 2004-07-01 2006-01-19 Seiko Epson Corp 光素子及びその製造方法
JP2010212385A (ja) * 2009-03-10 2010-09-24 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および情報処理装置
JP2013098606A (ja) * 2011-10-28 2013-05-20 Seiko Epson Corp 原子発振器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10353951A1 (de) 2003-11-18 2005-06-16 U-L-M Photonics Gmbh Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter
JP3482824B2 (ja) 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
JP3791584B2 (ja) 1999-12-28 2006-06-28 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US6900069B2 (en) * 2001-03-09 2005-05-31 Seiko Epson Corporation Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device
US20050169336A1 (en) 2004-02-04 2005-08-04 Fuji Xerox Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JP4568125B2 (ja) * 2005-01-17 2010-10-27 株式会社東芝 面発光型半導体素子
JP5527714B2 (ja) * 2009-11-18 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011159943A (ja) * 2010-01-08 2011-08-18 Ricoh Co Ltd 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5892320B2 (ja) 2012-01-11 2016-03-23 セイコーエプソン株式会社 原子発振器用の光学モジュールおよび原子発振器
JP6107089B2 (ja) * 2012-11-30 2017-04-05 株式会社リコー 面発光レーザ素子及び原子発振器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570905B1 (en) * 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
JP2003008142A (ja) * 2001-06-26 2003-01-10 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP2005252240A (ja) * 2004-02-04 2005-09-15 Fuji Xerox Co Ltd 垂直共振器型面発光半導体レーザ装置
JP2006019498A (ja) * 2004-07-01 2006-01-19 Seiko Epson Corp 光素子及びその製造方法
JP2010212385A (ja) * 2009-03-10 2010-09-24 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および情報処理装置
JP2013098606A (ja) * 2011-10-28 2013-05-20 Seiko Epson Corp 原子発振器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MONTI ET AL: ""Polarization Control in Strained T-bar VCSELｓ"", PHOTONICS TECHNOLOGY LETTERRS, vol. 14, no. 8, JPN6017038262, August 2002 (2002-08-01), pages 1034 - 1036, XP001132208, ISSN: 0003759532, DOI: 10.1109/LPT.2002.1021960 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119145A (ja) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
US10326256B2 (en) 2016-08-29 2019-06-18 Seiko Epson Corporation Surface emitting laser and atomic oscillator

Also Published As

Publication number Publication date
US10103515B2 (en) 2018-10-16
US9360845B2 (en) 2016-06-07
US20150180208A1 (en) 2015-06-25
CN104734012A (zh) 2015-06-24
US20160248226A1 (en) 2016-08-25
CN104734012B (zh) 2019-06-14

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