CN104734012B - 面发光激光器以及原子振荡器 - Google Patents
面发光激光器以及原子振荡器 Download PDFInfo
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- CN104734012B CN104734012B CN201410779785.7A CN201410779785A CN104734012B CN 104734012 B CN104734012 B CN 104734012B CN 201410779785 A CN201410779785 A CN 201410779785A CN 104734012 B CN104734012 B CN 104734012B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
- G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/1835—Non-circular mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18352—Mesa with inclined sidewall
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ecology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013263458A JP2015119137A (ja) | 2013-12-20 | 2013-12-20 | 面発光レーザーおよび原子発振器 |
| JP2013-263458 | 2013-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104734012A CN104734012A (zh) | 2015-06-24 |
| CN104734012B true CN104734012B (zh) | 2019-06-14 |
Family
ID=53401148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410779785.7A Expired - Fee Related CN104734012B (zh) | 2013-12-20 | 2014-12-16 | 面发光激光器以及原子振荡器 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9360845B2 (https=) |
| JP (1) | JP2015119137A (https=) |
| CN (1) | CN104734012B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6299955B2 (ja) * | 2013-12-20 | 2018-03-28 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
| JP6274404B2 (ja) * | 2013-12-20 | 2018-02-07 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
| KR102396332B1 (ko) * | 2015-09-22 | 2022-05-12 | 삼성전자주식회사 | Led 디스플레이용 미세간격 코팅부재 및 이를 이용한 코팅방법 |
| JP6786961B2 (ja) | 2016-08-29 | 2020-11-18 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
| US10268163B2 (en) * | 2016-10-19 | 2019-04-23 | Ricoh Company, Ltd. | Atomic oscillator and method for manufacturing atomic oscillator |
| JP2019040953A (ja) * | 2017-08-23 | 2019-03-14 | 住友電気工業株式会社 | 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 |
| JP2021166272A (ja) * | 2020-04-08 | 2021-10-14 | 住友電気工業株式会社 | 面発光レーザおよびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716718A (zh) * | 2004-07-01 | 2006-01-04 | 精工爱普生株式会社 | 光元件及其制造方法 |
| CN103208992A (zh) * | 2012-01-11 | 2013-07-17 | 精工爱普生株式会社 | 原子振荡器用光学模块以及原子振荡器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10353951A1 (de) | 2003-11-18 | 2005-06-16 | U-L-M Photonics Gmbh | Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter |
| JP3482824B2 (ja) | 1997-07-29 | 2004-01-06 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
| JP3791584B2 (ja) | 1999-12-28 | 2006-06-28 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
| US6570905B1 (en) * | 2000-11-02 | 2003-05-27 | U-L-M Photonics Gmbh | Vertical cavity surface emitting laser with reduced parasitic capacitance |
| US6900069B2 (en) * | 2001-03-09 | 2005-05-31 | Seiko Epson Corporation | Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device |
| JP2003008142A (ja) * | 2001-06-26 | 2003-01-10 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ素子 |
| US20050169336A1 (en) | 2004-02-04 | 2005-08-04 | Fuji Xerox Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
| JP4815812B2 (ja) * | 2004-02-04 | 2011-11-16 | 富士ゼロックス株式会社 | 垂直共振器型面発光半導体レーザ装置 |
| JP4568125B2 (ja) * | 2005-01-17 | 2010-10-27 | 株式会社東芝 | 面発光型半導体素子 |
| JP5381180B2 (ja) * | 2009-03-10 | 2014-01-08 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および情報処理装置 |
| JP5527714B2 (ja) * | 2009-11-18 | 2014-06-25 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| JP2011159943A (ja) * | 2010-01-08 | 2011-08-18 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| JP5796454B2 (ja) * | 2011-10-28 | 2015-10-21 | セイコーエプソン株式会社 | 原子発振器 |
| JP6107089B2 (ja) * | 2012-11-30 | 2017-04-05 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
-
2013
- 2013-12-20 JP JP2013263458A patent/JP2015119137A/ja active Pending
-
2014
- 2014-12-16 CN CN201410779785.7A patent/CN104734012B/zh not_active Expired - Fee Related
- 2014-12-17 US US14/573,293 patent/US9360845B2/en not_active Expired - Fee Related
-
2016
- 2016-05-06 US US15/148,065 patent/US10103515B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716718A (zh) * | 2004-07-01 | 2006-01-04 | 精工爱普生株式会社 | 光元件及其制造方法 |
| CN103208992A (zh) * | 2012-01-11 | 2013-07-17 | 精工爱普生株式会社 | 原子振荡器用光学模块以及原子振荡器 |
Non-Patent Citations (1)
| Title |
|---|
| Polarization Control in Strained T-bar VCSELs;F.Monti di Sopra et al.;《IEEE Photonics Technology Letters》;20020831;第14卷(第8期);第1页右栏第1-22行，附图1 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10103515B2 (en) | 2018-10-16 |
| JP2015119137A (ja) | 2015-06-25 |
| US9360845B2 (en) | 2016-06-07 |
| US20150180208A1 (en) | 2015-06-25 |
| CN104734012A (zh) | 2015-06-24 |
| US20160248226A1 (en) | 2016-08-25 |
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