JP2015061343A - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP2015061343A JP2015061343A JP2013192041A JP2013192041A JP2015061343A JP 2015061343 A JP2015061343 A JP 2015061343A JP 2013192041 A JP2013192041 A JP 2013192041A JP 2013192041 A JP2013192041 A JP 2013192041A JP 2015061343 A JP2015061343 A JP 2015061343A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
- H02M1/348—Passive dissipative snubbers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
11a 表面
11b 裏面
12 横型スイッチ素子(第2横型スイッチ素子)
12a 表面
12b 裏面
13、14 制御用スイッチ素子
15、16 スナバコンデンサ
20 第1基板
30 第2基板
40 ヒートシンク
50 熱伝導性材料
100 インバータ装置(電力変換装置)
301 導電パターン(電位調整パターン)
301a 素子接合パターン部
301b 接続パターン部
304 グランドパターン
C1、C4 第1電流経路
C3、C6 第2電流経路
D1、D3 ドレイン電極(第1電極、第2電極)
S1、S3 ソース電極(第1電極、第2電極)
Claims (14)
- 表面および裏面を含み、前記表面側に第1電極および第2電極を有するとともに、前記第1電極と前記第2電極との間に第1電流経路を有する横型スイッチ素子と、
前記横型スイッチ素子に電気的に接続されるスナバコンデンサと、
前記スナバコンデンサが搭載されているとともに、前記横型スイッチ素子の前記表面側の前記第1電極および前記第2電極が接続されている第1基板とを備え、
前記第1基板は、前記横型スイッチ素子の前記第1電極と前記第2電極との間で電流が流れる前記第1電流経路に対して略逆方向に電流が流れるとともに、前記第1電流経路に対向する位置に配置された第2電流経路を含む、電力変換装置。 - 前記横型スイッチ素子の駆動を制御する制御用スイッチ素子をさらに備え、
前記制御用スイッチ素子は、前記第1基板の前記横型スイッチ素子が接続されている側と反対側の面に搭載されている、請求項1に記載の電力変換装置。 - 前記制御用スイッチ素子は、平面視において、前記横型スイッチ素子と重ならない位置に配置されている、請求項2に記載の電力変換装置。
- 前記制御用スイッチ素子は、平面視において、前記横型スイッチ素子に対して前記スナバコンデンサと反対側に配置されている、請求項2または3に記載の電力変換装置。
- 前記スナバコンデンサは、前記第1基板の前記横型スイッチ素子が接続されている側と反対側の面に搭載されている、請求項1〜4のいずれか1項に記載の電力変換装置。
- 前記スナバコンデンサは、平面視において、前記横型スイッチ素子と重ならない位置に配置されている、請求項1〜5のいずれか1項に記載の電力変換装置。
- 前記横型スイッチ素子に対して前記第1基板とは反対側に配置された第2基板をさらに備え、
前記第2基板は、前記横型スイッチ素子の前記裏面が接続される電位調整パターンと、前記横型スイッチ素子が接合されている側と反対側の面に設けられたグランドパターンとを含み、
前記電位調整パターンは、前記グランドパターンの1/2よりも小さい面積を有するように形成されている、請求項1〜6のいずれか1項に記載の電力変換装置。 - 前記電位調整パターンは、前記横型スイッチ素子の前記裏面が接合される素子接合パターン部と、前記素子接合パターン部を前記第1基板に接続させるための接続パターン部とを含み、
前記接続パターン部は、前記素子接合パターン部よりも小さい面積を有するように形成されている、請求項7に記載の電力変換装置。 - 前記電位調整パターンは、平面視において、前記横型スイッチ素子の面積の2倍以下の面積を有するように形成されている、請求項7または8に記載の電力変換装置。
- 前記横型スイッチ素子から発生する熱を放熱するヒートシンクをさらに備え、
前記ヒートシンクは、前記第2基板の前記グランドパターン側に配置されている、請求項7〜9のいずれか1項に記載の電力変換装置。 - 前記第1基板および前記第2基板の間の前記横型スイッチ素子周辺には、熱伝導性材料が充填されている、請求項7〜10のいずれか1項に記載の電力変換装置。
- 前記制御用スイッチ素子は、前記横型スイッチ素子にカスコード接続されている、請求項1〜11のいずれか1項に記載の電力変換装置。
- 前記制御用スイッチ素子は、縦型デバイスを含む、請求項1〜12のいずれか1項に記載の電力変換装置。
- 前記横型スイッチ素子は、インバータ回路を構成する第1横型スイッチ素子および第2横型スイッチ素子を含み、
前記第1横型スイッチ素子および前記第2横型スイッチ素子は、それぞれ、前記表面側が前記第1基板に対向するように配置されている、請求項1〜13のいずれか1項に記載の電力変換装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013192041A JP5867472B2 (ja) | 2013-09-17 | 2013-09-17 | 電力変換装置 |
CN201410377316.2A CN104467456A (zh) | 2013-09-17 | 2014-08-01 | 电力转换装置 |
EP14182420.1A EP2849324A3 (en) | 2013-09-17 | 2014-08-27 | Power conversion apparatus |
US14/484,266 US20150078044A1 (en) | 2013-09-17 | 2014-09-12 | Power conversion apparatus |
Applications Claiming Priority (1)
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JP2013192041A JP5867472B2 (ja) | 2013-09-17 | 2013-09-17 | 電力変換装置 |
Publications (2)
Publication Number | Publication Date |
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JP2015061343A true JP2015061343A (ja) | 2015-03-30 |
JP5867472B2 JP5867472B2 (ja) | 2016-02-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013192041A Expired - Fee Related JP5867472B2 (ja) | 2013-09-17 | 2013-09-17 | 電力変換装置 |
Country Status (4)
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US (1) | US20150078044A1 (ja) |
EP (1) | EP2849324A3 (ja) |
JP (1) | JP5867472B2 (ja) |
CN (1) | CN104467456A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016214012A (ja) * | 2015-05-12 | 2016-12-15 | 株式会社ジェイテクト | 電力変換装置 |
JP2017123358A (ja) * | 2016-01-04 | 2017-07-13 | 京セラ株式会社 | パワーモジュール |
JP2017228683A (ja) * | 2016-06-23 | 2017-12-28 | ルネサスエレクトロニクス株式会社 | 電子装置 |
JP2020167869A (ja) * | 2019-03-29 | 2020-10-08 | 株式会社富士通ゼネラル | パワーモジュール |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104081646A (zh) * | 2012-01-31 | 2014-10-01 | 株式会社安川电机 | 电力变换装置和用于制造电力变换装置的方法 |
JP6020572B2 (ja) * | 2012-08-29 | 2016-11-02 | 株式会社安川電機 | 電力変換装置 |
CN105190881A (zh) * | 2013-03-18 | 2015-12-23 | 株式会社安川电机 | 电力变换装置 |
CN110416205B (zh) * | 2015-03-24 | 2024-01-02 | 株式会社东芝 | 半导体装置、逆变电路、驱动装置、车辆以及升降机 |
US9698076B1 (en) * | 2015-12-22 | 2017-07-04 | Ksr Ip Holdings Llc. | Metal slugs for double-sided cooling of power module |
CN108702080B (zh) * | 2016-02-08 | 2021-01-12 | Abb瑞士股份有限公司 | 用于高压电力系统的开关设备和包括这种开关设备的装置 |
CN108738369B (zh) * | 2017-02-13 | 2022-03-29 | 新电元工业株式会社 | 电子模块 |
CN112260560B (zh) * | 2019-07-05 | 2023-12-19 | 松下知识产权经营株式会社 | 电力变换装置 |
WO2022074971A1 (ja) | 2020-10-05 | 2022-04-14 | ローム株式会社 | 半導体装置 |
Citations (7)
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JPH11332253A (ja) * | 1998-05-11 | 1999-11-30 | Mitsubishi Electric Corp | 電力変換装置 |
JP2001192180A (ja) * | 2000-01-07 | 2001-07-17 | Mitsubishi Electric Corp | エレベータの制御装置およびエレベータ用インバータ装置 |
JP2003017658A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | 電力用半導体装置 |
JP2005532776A (ja) * | 2002-07-10 | 2005-10-27 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 車両のオールタネータ用アクティブ整流器モジュール |
JP2007318911A (ja) * | 2006-05-25 | 2007-12-06 | Toyota Industries Corp | 半導体装置 |
JP2013153027A (ja) * | 2012-01-24 | 2013-08-08 | Fujitsu Ltd | 半導体装置及び電源装置 |
WO2013114565A1 (ja) * | 2012-01-31 | 2013-08-08 | 株式会社安川電機 | 電力変換装置および電力変換装置の製造方法 |
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EP1908049A2 (en) * | 2005-06-24 | 2008-04-09 | International Rectifier Corporation | Semiconductor half-bridge module with low inductance |
JP4564937B2 (ja) * | 2006-04-27 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電気回路装置及び電気回路モジュール並びに電力変換装置 |
JP4501964B2 (ja) * | 2007-06-01 | 2010-07-14 | 株式会社日立製作所 | 電力変換装置 |
JP2009219268A (ja) * | 2008-03-11 | 2009-09-24 | Daikin Ind Ltd | 電力変換装置 |
JP5169353B2 (ja) * | 2008-03-18 | 2013-03-27 | 三菱電機株式会社 | パワーモジュール |
JP5258721B2 (ja) | 2009-09-18 | 2013-08-07 | 三菱電機株式会社 | インバータ装置 |
CN102640408B (zh) * | 2009-11-17 | 2015-05-20 | 三菱电机株式会社 | 三电平电力变换装置 |
-
2013
- 2013-09-17 JP JP2013192041A patent/JP5867472B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-01 CN CN201410377316.2A patent/CN104467456A/zh active Pending
- 2014-08-27 EP EP14182420.1A patent/EP2849324A3/en not_active Withdrawn
- 2014-09-12 US US14/484,266 patent/US20150078044A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11332253A (ja) * | 1998-05-11 | 1999-11-30 | Mitsubishi Electric Corp | 電力変換装置 |
JP2001192180A (ja) * | 2000-01-07 | 2001-07-17 | Mitsubishi Electric Corp | エレベータの制御装置およびエレベータ用インバータ装置 |
JP2003017658A (ja) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | 電力用半導体装置 |
JP2005532776A (ja) * | 2002-07-10 | 2005-10-27 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 車両のオールタネータ用アクティブ整流器モジュール |
JP2007318911A (ja) * | 2006-05-25 | 2007-12-06 | Toyota Industries Corp | 半導体装置 |
JP2013153027A (ja) * | 2012-01-24 | 2013-08-08 | Fujitsu Ltd | 半導体装置及び電源装置 |
WO2013114565A1 (ja) * | 2012-01-31 | 2013-08-08 | 株式会社安川電機 | 電力変換装置および電力変換装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016214012A (ja) * | 2015-05-12 | 2016-12-15 | 株式会社ジェイテクト | 電力変換装置 |
JP2017123358A (ja) * | 2016-01-04 | 2017-07-13 | 京セラ株式会社 | パワーモジュール |
JP2017228683A (ja) * | 2016-06-23 | 2017-12-28 | ルネサスエレクトロニクス株式会社 | 電子装置 |
JP2020167869A (ja) * | 2019-03-29 | 2020-10-08 | 株式会社富士通ゼネラル | パワーモジュール |
Also Published As
Publication number | Publication date |
---|---|
JP5867472B2 (ja) | 2016-02-24 |
EP2849324A3 (en) | 2015-04-08 |
CN104467456A (zh) | 2015-03-25 |
EP2849324A2 (en) | 2015-03-18 |
US20150078044A1 (en) | 2015-03-19 |
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