JP2015038509A5 - - Google Patents

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JP2015038509A5
JP2015038509A5 JP2014228898A JP2014228898A JP2015038509A5 JP 2015038509 A5 JP2015038509 A5 JP 2015038509A5 JP 2014228898 A JP2014228898 A JP 2014228898A JP 2014228898 A JP2014228898 A JP 2014228898A JP 2015038509 A5 JP2015038509 A5 JP 2015038509A5
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sample
dark
contrast value
calibration
intersection
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JP5852725B2 (ja
JP2015038509A (ja
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JP2014228898A 2008-10-31 2014-11-11 加工終点検出方法 Active JP5852725B2 (ja)

Applications Claiming Priority (2)

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US11039408P 2008-10-31 2008-10-31
US61/110,394 2008-10-31

Related Parent Applications (1)

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JP2011534861A Division JP5649583B2 (ja) 2008-10-31 2009-11-02 加工終点検出方法及び装置

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JP2015038509A JP2015038509A (ja) 2015-02-26
JP2015038509A5 true JP2015038509A5 (enExample) 2015-12-17
JP5852725B2 JP5852725B2 (ja) 2016-02-03

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JP2011534861A Active JP5649583B2 (ja) 2008-10-31 2009-11-02 加工終点検出方法及び装置
JP2014228898A Active JP5852725B2 (ja) 2008-10-31 2014-11-11 加工終点検出方法

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US (2) US8170832B2 (enExample)
EP (2) EP2351062A4 (enExample)
JP (2) JP5649583B2 (enExample)
CN (2) CN102272878B (enExample)
WO (1) WO2010051546A2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102272878B (zh) 2008-10-31 2014-07-23 Fei公司 样本厚度的测量和终点确定
WO2011011661A2 (en) * 2009-07-24 2011-01-27 Omniprobe, Inc. Method and apparatus for the monitoring of sample milling in a charged particle instrument
DE112011102731T5 (de) * 2010-08-18 2013-08-22 Hitachi High-Technologies Corporation Elektronenstrahlvorrichtung
EP2461347A1 (en) * 2010-12-06 2012-06-06 Fei Company Detector system for transmission electron microscope
JP5473891B2 (ja) * 2010-12-27 2014-04-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料作製方法
JP2013057638A (ja) * 2011-09-09 2013-03-28 Sumitomo Rubber Ind Ltd ゴム材料のシミュレーション方法
CN102538670B (zh) * 2011-10-31 2015-04-22 上海显恒光电科技股份有限公司 一种微米级电子束焦斑尺寸的光学测量装置及其方法
JP6062628B2 (ja) * 2011-12-08 2017-01-18 株式会社日立ハイテクサイエンス 薄膜試料作製装置及び方法
JP2013167505A (ja) * 2012-02-15 2013-08-29 Sumitomo Electric Ind Ltd 薄膜試料の作製方法及び膜厚測定方法
CN104428867B (zh) * 2012-07-16 2018-10-16 Fei 公司 用于聚焦离子束处理的终点确定
US10110854B2 (en) 2012-07-27 2018-10-23 Gatan, Inc. Ion beam sample preparation apparatus and methods
US10465293B2 (en) 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
TWI461653B (zh) * 2013-02-06 2014-11-21 Inotera Memories Inc 測量樣本尺寸的方法
WO2014155557A1 (ja) * 2013-03-27 2014-10-02 富士通株式会社 試料測定装置、試料測定方法、半導体装置の評価方法、およびコンピュータプログラム
GB201308436D0 (en) 2013-05-10 2013-06-19 Oxford Instr Nanotechnology Tools Ltd Metrology for preparation of thin samples
CZ304824B6 (cs) * 2013-07-11 2014-11-19 Tescan Orsay Holding, A.S. Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění
US8933401B1 (en) * 2013-10-25 2015-01-13 Lawrence Livermore National Security, Llc System and method for compressive scanning electron microscopy
EP2869328A1 (en) * 2013-10-29 2015-05-06 Fei Company Differential imaging with pattern recognition for process automation of cross sectioning applications
CN103868773A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 透射电镜样品的制作方法
US9594035B2 (en) * 2014-04-25 2017-03-14 Revera, Incorporated Silicon germanium thickness and composition determination using combined XPS and XRF technologies
CN106233420B (zh) * 2014-05-09 2018-10-16 株式会社日立高新技术 试样加工方法及带电粒子束装置
US9779914B2 (en) * 2014-07-25 2017-10-03 E.A. Fischione Instruments, Inc. Apparatus for preparing a sample for microscopy
US11004656B2 (en) * 2014-10-15 2021-05-11 Gatan, Inc. Methods and apparatus for determining, using, and indicating ion beam working properties
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling
CN104697836B (zh) * 2015-03-30 2018-04-06 上海华力微电子有限公司 一种tem样品制备方法
EP3104155A1 (en) 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
NL2017844A (en) * 2015-12-22 2017-06-28 Asml Netherlands Bv Focus control arrangement and method
US9837246B1 (en) 2016-07-22 2017-12-05 Fei Company Reinforced sample for transmission electron microscope
US9779910B1 (en) 2016-09-13 2017-10-03 Qualcomm Incorporated Utilization of voltage contrast during sample preparation for transmission electron microscopy
DE102017209423A1 (de) * 2017-06-02 2018-12-06 Carl Zeiss Microscopy Gmbh Elektronenstrahltomographieverfahren und Elektronenstrahltomographiesystem
CN107894357B (zh) * 2017-11-08 2021-03-05 上海华力微电子有限公司 一种自动化的样本减薄方法
EP3531439B1 (en) 2018-02-22 2020-06-24 FEI Company Intelligent pre-scan in scanning transmission charged particle microscopy
DE102018117492B3 (de) 2018-07-19 2019-10-02 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen
EP3648138A1 (en) * 2018-10-31 2020-05-06 FEI Company Measurement and endpointing of sample thickness
CN109350109B (zh) * 2018-12-06 2022-03-04 北京锐视康科技发展有限公司 多功能牙科扫描系统
WO2020160788A1 (en) * 2019-02-08 2020-08-13 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. Apparatus and method for preparing a sample for transmission microscopy investigations by ion beam initiated ablation
CN111024017B (zh) * 2019-12-04 2021-10-15 中国电子科技集团公司第十三研究所 一种膜厚样片及膜厚样片的制备方法
US12347707B2 (en) * 2020-02-27 2025-07-01 Hitachi High-Tech Corporation Semiconductor analysis system
US11171048B2 (en) * 2020-03-12 2021-11-09 Fei Company Adaptive endpoint detection for automated delayering of semiconductor samples
NL2026054B1 (en) * 2020-07-13 2022-03-15 Delmic Ip B V Method and apparatus for micromachining a sample using a Focused Ion Beam
CN113008171A (zh) * 2021-03-19 2021-06-22 长江存储科技有限责任公司 一种样品厚度的确定方法
WO2022216970A1 (en) * 2021-04-07 2022-10-13 Protochips, Inc. Systems and methods of metadata and image management for reviewing data from transmission electron microscope (tem) sessions
US11455333B1 (en) 2021-04-07 2022-09-27 Protochips, Inc. Systems and methods of metadata and image management for reviewing data from transmission electron microscope (TEM) sessions
CN113324488B (zh) * 2021-05-14 2023-04-18 长江存储科技有限责任公司 一种厚度测量方法和系统
NL2032641B1 (en) 2022-07-29 2024-02-06 Univ Delft Tech Method and apparatus for in-situ sample quality inspection in cryogenic focused ion beam milling
US20240047281A1 (en) * 2022-08-03 2024-02-08 Nxp Usa, Inc. Structure and method for test-point access in a semiconductor
DE102023134086A1 (de) * 2023-12-06 2025-06-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Verfahren zum Bestimmen eines Bearbeitungspunktes, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung von mindestens einem der Verfahren

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629898A (en) * 1981-10-02 1986-12-16 Oregon Graduate Center Electron and ion beam apparatus and passivation milling
JP2602287B2 (ja) * 1988-07-01 1997-04-23 株式会社日立製作所 Ｘ線マスクの欠陥検査方法及びその装置
US5093572A (en) * 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
US6051834A (en) * 1991-05-15 2000-04-18 Hitachi, Ltd. Electron microscope
JP3119959B2 (ja) * 1993-02-05 2000-12-25 セイコーインスツルメンツ株式会社 集束イオンビーム装置および加工観察装置
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
JP3221797B2 (ja) 1994-06-14 2001-10-22 株式会社日立製作所 試料作成方法及びその装置
JP3058394B2 (ja) * 1994-06-23 2000-07-04 シャープ株式会社 透過電子顕微鏡用断面試料作成方法
DE29507225U1 (de) * 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
JPH10214587A (ja) * 1997-01-30 1998-08-11 Hitachi Ltd 立体観察用走査透過電子顕微鏡及び立体画像形成システム
JP3987208B2 (ja) * 1998-07-03 2007-10-03 株式会社日立製作所 走査透過型電子顕微鏡
US6276987B1 (en) * 1998-08-04 2001-08-21 International Business Machines Corporation Chemical mechanical polishing endpoint process control
US6768110B2 (en) 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation
US6905623B2 (en) * 2000-12-15 2005-06-14 Credence Systems Corporation Precise, in-situ endpoint detection for charged particle beam processing
US6815359B2 (en) * 2001-03-28 2004-11-09 Advanced Micro Devices, Inc. Process for improving the etch stability of ultra-thin photoresist
US6774365B2 (en) * 2001-03-28 2004-08-10 Advanced Micro Devices, Inc. SEM inspection and analysis of patterned photoresist features
US6589709B1 (en) * 2001-03-28 2003-07-08 Advanced Micro Devices, Inc. Process for preventing deformation of patterned photoresist features
US6630288B2 (en) * 2001-03-28 2003-10-07 Advanced Micro Devices, Inc. Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US6716571B2 (en) * 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6653231B2 (en) * 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6828259B2 (en) * 2001-03-28 2004-12-07 Advanced Micro Devices, Inc. Enhanced transistor gate using E-beam radiation
US6683316B2 (en) * 2001-08-01 2004-01-27 Aspex, Llc Apparatus for correlating an optical image and a SEM image and method of use thereof
JP3776887B2 (ja) * 2003-01-07 2006-05-17 株式会社日立ハイテクノロジーズ 電子線装置
JP4153388B2 (ja) * 2003-08-29 2008-09-24 Ｔｄｋ株式会社 試料測定方法
KR100594234B1 (ko) * 2003-12-05 2006-06-30 삼성전자주식회사 편광 현상을 이용하여 해상도를 향상시킬 수 있는 포토마스크 및 그 제조방법
KR101065074B1 (ko) * 2004-01-16 2011-09-15 삼성전자주식회사 투과전자현미경 성분 맵핑용 표준시료 및 이를 이용한 투과전자현미경 성분 맵핑방법
US7141791B2 (en) * 2004-09-07 2006-11-28 Kla-Tencor Technologies Corporation Apparatus and method for E-beam dark field imaging
JP4664041B2 (ja) * 2004-10-27 2011-04-06 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及び試料作製方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
CN101105463B (zh) * 2006-07-10 2010-12-22 中芯国际集成电路制造(上海)有限公司 Tem样品最小有效厚度的检测方法
CN101153833B (zh) 2006-09-30 2010-09-29 中芯国际集成电路制造(上海)有限公司 透射电子显微镜样品的制作方法
EP2106555B1 (en) * 2006-10-20 2015-01-07 FEI Company Method for s/tem sample analysis
US7834315B2 (en) * 2007-04-23 2010-11-16 Omniprobe, Inc. Method for STEM sample inspection in a charged particle beam instrument
US8835845B2 (en) * 2007-06-01 2014-09-16 Fei Company In-situ STEM sample preparation
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
EP2149897A1 (en) 2008-07-31 2010-02-03 FEI Company Method for milling and end-pointing a sample
CN102272878B (zh) 2008-10-31 2014-07-23 Fei公司 样本厚度的测量和终点确定
EP2233907A1 (en) * 2009-03-27 2010-09-29 FEI Company Forming an image while milling a work piece

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