JP2014529183A - 特定の有機化合物を含む化学機械研磨用組成物の存在下での元素ゲルマニウムおよび／またはＳｉ１−ｘＧｅｘ材料の化学機械研磨を含む、半導体デバイスを製造するための方法 - Google Patents

特定の有機化合物を含む化学機械研磨用組成物の存在下での元素ゲルマニウムおよび／またはＳｉ１−ｘＧｅｘ材料の化学機械研磨を含む、半導体デバイスを製造するための方法 Download PDF

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JP2014529183A
JP2014529183A JP2014523427A JP2014523427A JP2014529183A JP 2014529183 A JP2014529183 A JP 2014529183A JP 2014523427 A JP2014523427 A JP 2014523427A JP 2014523427 A JP2014523427 A JP 2014523427A JP 2014529183 A JP2014529183 A JP 2014529183A
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amino
heterocyclic
alkyl
alkylaryl
aryl
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JP2014529183A5 (enExample
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マルテン ノラー，バスティアン
マルテン ノラー，バスティアン
ドレシャー，ベッティナ
ジロー，クリストフ
リー，ユーチョウ
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dispersion Chemistry (AREA)
JP2014523427A 2011-08-01 2012-07-30 特定の有機化合物を含む化学機械研磨用組成物の存在下での元素ゲルマニウムおよび／またはＳｉ１−ｘＧｅｘ材料の化学機械研磨を含む、半導体デバイスを製造するための方法 Pending JP2014529183A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161513694P 2011-08-01 2011-08-01
US61/513694 2011-08-01
PCT/IB2012/053877 WO2013018015A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND

Publications (2)

Publication Number Publication Date
JP2014529183A true JP2014529183A (ja) 2014-10-30
JP2014529183A5 JP2014529183A5 (enExample) 2015-09-10

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JP2014523427A Pending JP2014529183A (ja) 2011-08-01 2012-07-30 特定の有機化合物を含む化学機械研磨用組成物の存在下での元素ゲルマニウムおよび／またはＳｉ１−ｘＧｅｘ材料の化学機械研磨を含む、半導体デバイスを製造するための方法

Country Status (8)

Country Link
US (1) US9443739B2 (enExample)
EP (1) EP2742103B1 (enExample)
JP (1) JP2014529183A (enExample)
KR (1) KR20140059216A (enExample)
CN (1) CN103827235B (enExample)
RU (1) RU2605941C2 (enExample)
TW (1) TWI548728B (enExample)
WO (1) WO2013018015A2 (enExample)

Cited By (3)

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JP2014225517A (ja) * 2013-05-15 2014-12-04 株式会社フジミインコーポレーテッド 研磨用組成物
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
WO2019181269A1 (ja) * 2018-03-22 2019-09-26 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤

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WO2012102187A1 (ja) * 2011-01-25 2012-08-02 日立化成工業株式会社 Ｃｍｐ研磨液及びその製造方法、複合粒子の製造方法、並びに基体の研磨方法
WO2013077369A1 (ja) 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
WO2014184709A2 (en) * 2013-05-15 2014-11-20 Basf Se Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
JP6436638B2 (ja) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP6094541B2 (ja) * 2014-07-28 2017-03-15 信越半導体株式会社 ゲルマニウムウェーハの研磨方法
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
US9530655B2 (en) 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
US9431261B2 (en) * 2014-12-01 2016-08-30 The Boeing Company Removal of defects by in-situ etching during chemical-mechanical polishing processing
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
KR102640734B1 (ko) * 2015-12-24 2024-02-27 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
JP6723440B2 (ja) * 2016-08-26 2020-07-15 フエロ コーポレーション スラリー組成物及びシリカの選択的研磨の方法
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US11697183B2 (en) 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
US10920105B2 (en) 2018-07-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Materials and methods for chemical mechanical polishing of ruthenium-containing materials
KR102886739B1 (ko) 2019-02-11 2025-11-17 삼성전자주식회사 연마 조성물 및 이를 사용한 반도체 소자 제조 방법
US12448568B2 (en) * 2022-03-10 2025-10-21 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

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JP2009525615A (ja) * 2006-02-01 2009-07-09 キャボット マイクロエレクトロニクス コーポレイション 相変化合金をｃｍｐするための組成物及び方法
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JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
WO2019181269A1 (ja) * 2018-03-22 2019-09-26 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤

Also Published As

Publication number Publication date
TW201323590A (zh) 2013-06-16
WO2013018015A2 (en) 2013-02-07
US20140170852A1 (en) 2014-06-19
TWI548728B (zh) 2016-09-11
EP2742103B1 (en) 2016-09-21
CN103827235A (zh) 2014-05-28
KR20140059216A (ko) 2014-05-15
CN103827235B (zh) 2016-08-17
RU2605941C2 (ru) 2016-12-27
US9443739B2 (en) 2016-09-13
WO2013018015A3 (en) 2013-03-28
EP2742103A2 (en) 2014-06-18
RU2014107763A (ru) 2015-09-10
EP2742103A4 (en) 2015-03-25

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