JP2014526146A5 - - Google Patents

Download PDF

Info

Publication number
JP2014526146A5
JP2014526146A5 JP2014520222A JP2014520222A JP2014526146A5 JP 2014526146 A5 JP2014526146 A5 JP 2014526146A5 JP 2014520222 A JP2014520222 A JP 2014520222A JP 2014520222 A JP2014520222 A JP 2014520222A JP 2014526146 A5 JP2014526146 A5 JP 2014526146A5
Authority
JP
Japan
Prior art keywords
semiconductor wafer
trench
mask
point
front surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014520222A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014526146A (ja
Filing date
Publication date
Priority claimed from US13/180,021 external-priority patent/US8951819B2/en
Application filed filed Critical
Publication of JP2014526146A publication Critical patent/JP2014526146A/ja
Publication of JP2014526146A5 publication Critical patent/JP2014526146A5/ja
Pending legal-status Critical Current

Links

JP2014520222A 2011-07-11 2012-07-05 プラズマエッチングを伴うハイブリッド分割ビームレーザスクライビングプロセスを用いたウェハダイシング Pending JP2014526146A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/180,021 2011-07-11
US13/180,021 US8951819B2 (en) 2011-07-11 2011-07-11 Wafer dicing using hybrid split-beam laser scribing process with plasma etch
PCT/US2012/045603 WO2013009575A2 (en) 2011-07-11 2012-07-05 Wafer dicing using hybrid split-beam laser scribing process with plasma etch

Publications (2)

Publication Number Publication Date
JP2014526146A JP2014526146A (ja) 2014-10-02
JP2014526146A5 true JP2014526146A5 (https=) 2015-07-09

Family

ID=47506812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014520222A Pending JP2014526146A (ja) 2011-07-11 2012-07-05 プラズマエッチングを伴うハイブリッド分割ビームレーザスクライビングプロセスを用いたウェハダイシング

Country Status (6)

Country Link
US (1) US8951819B2 (https=)
JP (1) JP2014526146A (https=)
KR (1) KR101552607B1 (https=)
CN (1) CN103718287B (https=)
TW (1) TWI508155B (https=)
WO (1) WO2013009575A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall
US9553021B2 (en) * 2012-09-03 2017-01-24 Infineon Technologies Ag Method for processing a wafer and method for dicing a wafer
EP3594998B1 (en) * 2013-03-06 2022-01-05 Plasma-Therm, Llc Method for plasma dicing a semi-conductor wafer
DE102013005136A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zurn Abtragen von sprödhartem Material mittels Laserstrahlung
DE112013007003T5 (de) * 2013-06-20 2016-01-07 Intel Corporation Nicht planare Halbleitervorrichtung mit dotierter Unterrippenregion und Verfahren zu deren Herstellung
US20150037915A1 (en) * 2013-07-31 2015-02-05 Wei-Sheng Lei Method and system for laser focus plane determination in a laser scribing process
US9460966B2 (en) 2013-10-10 2016-10-04 Applied Materials, Inc. Method and apparatus for dicing wafers having thick passivation polymer layer
US9472505B2 (en) * 2013-12-12 2016-10-18 Intel Corporation Die or substrate marking using a laser
US9076860B1 (en) * 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
US20150287638A1 (en) * 2014-04-04 2015-10-08 Jungrae Park Hybrid wafer dicing approach using collimated laser scribing process and plasma etch
US9859162B2 (en) 2014-09-11 2018-01-02 Alta Devices, Inc. Perforation of films for separation
US9418895B1 (en) 2015-03-14 2016-08-16 International Business Machines Corporation Dies for RFID devices and sensor applications
US9972575B2 (en) * 2016-03-03 2018-05-15 Applied Materials, Inc. Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
US9852997B2 (en) * 2016-03-25 2017-12-26 Applied Materials, Inc. Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
US11201077B2 (en) 2017-06-12 2021-12-14 Kulicke & Soffa Netherlands B.V. Parallel assembly of discrete components onto a substrate
JP6720333B2 (ja) 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
JP2019149450A (ja) * 2018-02-27 2019-09-05 株式会社ディスコ ウェーハの加工方法
US10535561B2 (en) * 2018-03-12 2020-01-14 Applied Materials, Inc. Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process
CN108381042A (zh) * 2018-03-23 2018-08-10 伊欧激光科技（苏州）有限公司 晶片加工系统及晶片加工方法
KR102909967B1 (ko) * 2019-10-24 2026-01-09 삼성디스플레이 주식회사 기판 가공 장치 및 기판 가공 방법
EP4073580A1 (en) * 2019-12-10 2022-10-19 View, Inc. Laser methods for processing electrochromic glass
CN111822886B (zh) * 2020-06-11 2022-11-22 华东师范大学重庆研究院 一种微流控芯片微通道的多焦点超快激光制备装置及方法

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US5373137A (en) 1994-01-28 1994-12-13 Litton Systems, Inc. Multiple-line laser writing apparatus and method
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (ja) 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (ja) 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6562698B2 (en) * 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
JP2001110811A (ja) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4387007B2 (ja) 1999-10-26 2009-12-16 株式会社ディスコ 半導体ウェーハの分割方法
JP2001144126A (ja) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001148358A (ja) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法
US6300593B1 (en) * 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
CA2395960A1 (en) 2000-01-10 2001-07-19 Electro Scientific Industries, Inc. Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulsewidths
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
WO2001074529A2 (en) 2000-03-30 2001-10-11 Electro Scientific Industries, Inc. Laser system and method for single pass micromachining of multilayer workpieces
KR100773070B1 (ko) 2000-07-12 2007-11-02 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Ｉｃ 퓨즈를 하나의 펄스로 절단하기 위한 ｕｖ 레이저시스템 및 방법
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (ja) 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
KR100451950B1 (ko) 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
AU2003246348A1 (en) 2002-02-25 2003-09-09 Disco Corporation Method for dividing semiconductor wafer
JP2003257896A (ja) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
KR101037142B1 (ko) 2002-04-19 2011-05-26 일렉트로 사이언티픽 인더스트리즈, 아이엔씨 펄스 레이저를 이용한 기판의 프로그램 제어 다이싱
JP2004031526A (ja) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (ja) 2002-07-17 2009-07-01 新光電気工業株式会社 半導体装置の製造方法
JP3908148B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
JP3775410B2 (ja) * 2003-02-03 2006-05-17 セイコーエプソン株式会社 レーザー加工方法、レーザー溶接方法並びにレーザー加工装置
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP2004322168A (ja) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP3842769B2 (ja) * 2003-09-01 2006-11-08 株式会社東芝 レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法
JP4408361B2 (ja) 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (ja) 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
JP2005203541A (ja) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
JP2006013115A (ja) * 2004-06-25 2006-01-12 Seiko Epson Corp エッチング方法及び微細構造体の製造方法
JP4018088B2 (ja) * 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (ja) 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
US20060086898A1 (en) * 2004-10-26 2006-04-27 Matsushita Electric Industrial Co., Ltd. Method and apparatus of making highly repetitive micro-pattern using laser writer
US20060146910A1 (en) * 2004-11-23 2006-07-06 Manoochehr Koochesfahani Method and apparatus for simultaneous velocity and temperature measurements in fluid flow
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (ja) * 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
JP4478053B2 (ja) 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4599243B2 (ja) 2005-07-12 2010-12-15 株式会社ディスコ レーザー加工装置
ATE512747T1 (de) * 2005-10-31 2011-07-15 Advanced Laser Separation Internat Alsi B V Verfahren zum formen eines oder mehrerer getrennten ritze in einer oberfläche eines substrats
JP4769560B2 (ja) 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP4372115B2 (ja) 2006-05-12 2009-11-25 パナソニック株式会社 半導体装置の製造方法、および半導体モジュールの製造方法
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
JP4544231B2 (ja) 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP4840174B2 (ja) * 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP4840200B2 (ja) 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP4488037B2 (ja) 2007-07-24 2010-06-23 パナソニック株式会社 半導体ウェハの処理方法
JP5205012B2 (ja) * 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 表示装置及び当該表示装置を具備する電子機器
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
CN101990480A (zh) 2008-04-10 2011-03-23 应用材料股份有限公司 激光刻划平台与杂合书写策略
TWI384577B (zh) * 2008-07-31 2013-02-01 家登精密工業股份有限公司 門上凹陷區域兩旁配置有晶圓限制件模組之前開式晶圓盒
US8211781B2 (en) * 2008-11-10 2012-07-03 Stanley Electric Co., Ltd. Semiconductor manufacturing method
JP5590642B2 (ja) * 2009-02-02 2014-09-17 独立行政法人国立高等専門学校機構 スクライブ加工装置及びスクライブ加工方法
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8557683B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing

Similar Documents

Publication Publication Date Title
JP2014526146A5 (https=)
WO2011163149A3 (en) Wafer dicing using femtosecond-based laser and plasma etch
WO2017151254A3 (en) Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
WO2013009575A3 (en) Wafer dicing using hybrid split-beam laser scribing process with plasma etch
TW201612965A (en) Wafer dicing using hybrid laser and plasma etch approach with mask application by vacuum lamination
WO2012173791A3 (en) Wafer dicing using hybrid galvanic laser scribing process with plasma etch
WO2012173790A3 (en) Hybrid laser and plasma etch wafer dicing using substrate carrier
WO2012173792A3 (en) Laser and plasma etch wafer dicing using physically-removable mask
WO2012173793A3 (en) Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch
JP2014523113A5 (https=)
EP4583660A3 (en) Methods of forming a semiconductor device structure including a stair step structure, and related semiconductor devices
JP2013535114A5 (https=)
TW201614768A (en) Method of forming an interconnect structure for a semiconductor device
WO2012173768A3 (en) Water soluble mask for substrate dicing by laser and plasma etch
TW200721305A (en) Semiconductor device structures and methods of forming semiconductor structures
WO2011087874A3 (en) Method of controlling trench microloading using plasma pulsing
WO2010002683A3 (en) Method for fabricating high density pillar structures by double patterning using positive photoresist
JP2017034246A5 (ja) 半導体装置の作製方法
ATE553497T1 (de) Herstelungsverfahren für halbleiterbauelemente
JP2017103388A5 (https=)
WO2012173759A3 (en) In-situ deposited mask layer for device singulation by laser scribing and plasma etch
TW200711066A (en) Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device
MY198103A (en) Wafer processing method
JP2010531542A5 (https=)
TW200501216A (en) Organic semiconductor device and method of manufacture of same