JP2014517498A5 - - Google Patents

Download PDF

Info

Publication number
JP2014517498A5
JP2014517498A5 JP2014503180A JP2014503180A JP2014517498A5 JP 2014517498 A5 JP2014517498 A5 JP 2014517498A5 JP 2014503180 A JP2014503180 A JP 2014503180A JP 2014503180 A JP2014503180 A JP 2014503180A JP 2014517498 A5 JP2014517498 A5 JP 2014517498A5
Authority
JP
Japan
Prior art keywords
substrate
transfer chamber
reaction chamber
substrate transfer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014503180A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014517498A (ja
JP5885830B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/FI2011/050302 external-priority patent/WO2012136875A1/en
Publication of JP2014517498A publication Critical patent/JP2014517498A/ja
Publication of JP2014517498A5 publication Critical patent/JP2014517498A5/ja
Application granted granted Critical
Publication of JP5885830B2 publication Critical patent/JP5885830B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014503180A 2011-04-07 2011-04-07 プラズマ源を有する堆積反応炉 Active JP5885830B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2011/050302 WO2012136875A1 (en) 2011-04-07 2011-04-07 Deposition reactor with plasma source

Publications (3)

Publication Number Publication Date
JP2014517498A JP2014517498A (ja) 2014-07-17
JP2014517498A5 true JP2014517498A5 (OSRAM) 2015-07-16
JP5885830B2 JP5885830B2 (ja) 2016-03-16

Family

ID=46968646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014503180A Active JP5885830B2 (ja) 2011-04-07 2011-04-07 プラズマ源を有する堆積反応炉

Country Status (9)

Country Link
US (1) US10494718B2 (OSRAM)
EP (1) EP2694701B1 (OSRAM)
JP (1) JP5885830B2 (OSRAM)
KR (4) KR101807231B1 (OSRAM)
CN (1) CN103459660B (OSRAM)
RU (1) RU2571547C2 (OSRAM)
SG (1) SG11201405415TA (OSRAM)
TW (1) TWI519673B (OSRAM)
WO (1) WO2012136875A1 (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2571547C2 (ru) 2011-04-07 2015-12-20 Пикосан Ой Реактор для осаждения с плазменным источником
RU2620230C2 (ru) 2012-11-23 2017-05-23 Пикосан Ой Способ загрузки подложки в реактор асо
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
FI126970B (en) 2014-12-22 2017-08-31 Picosun Oy Atomic layer cultivation in which the first and second species of source materials are present simultaneously
US20190127853A1 (en) * 2016-04-12 2019-05-02 Picosun Oy Coating by ald for suppressing metallic whiskers
US20190194809A1 (en) * 2016-09-16 2019-06-27 Picosun Oy Apparatus and methods for atomic layer deposition
DE17895903T1 (de) * 2017-02-08 2020-01-16 Picosun Oy Abscheidungs- oder Reinigungsvorrichtung mit beweglicher Struktur und Verfahren zum Betrieb
JP6445603B2 (ja) * 2017-03-07 2018-12-26 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ Ａｌｄ反応炉における基板の装填
CN106987826B (zh) * 2017-05-22 2019-03-12 沈阳拓荆科技有限公司 一种双腔式等离子体沉积镀膜方法
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
RU2748658C1 (ru) * 2020-07-16 2021-05-28 Пикосан Ой Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130545B (en) * 2021-09-14 2023-11-08 Picosun Oy A substrate processing apparatus and a method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2880902A (en) * 1957-06-03 1959-04-07 Owsen Peter Collapsible article
US3138483A (en) * 1960-01-11 1964-06-23 Polymer Processes Inc Apparatus for coating interior of hollow body
SU769834A1 (ru) * 1978-07-20 1981-09-07 Институт Физики Полупроволников Со Ан Ссср Устройство дл осождени слоев из газовой фазы
JPS63136921U (OSRAM) * 1987-03-02 1988-09-08
US5088444A (en) * 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
JPH0336274A (ja) 1989-06-30 1991-02-15 Sony Corp プラズマ装置
TW239164B (OSRAM) * 1992-08-12 1995-01-21 Tokyo Electron Co Ltd
JPH0845907A (ja) 1994-07-29 1996-02-16 Toshiba Corp 半導体装置のプラズマ処理方法
KR100239405B1 (ko) 1996-10-24 2000-01-15 김영환 반도체 제조장치
RU2099440C1 (ru) * 1997-01-24 1997-12-20 Плазма Текнололоджи Лимитед Способ обработки поверхностей и устройство для его осуществления
UA69453C2 (uk) * 2001-11-20 2004-09-15 Науковий Центр "Інститут Ядерних Досліджень" Національної Академії Наук України Плазмохімічний реактор
JP2004296490A (ja) 2003-03-25 2004-10-21 Tokyo Electron Ltd 処理装置
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
JP4879509B2 (ja) * 2004-05-21 2012-02-22 株式会社アルバック 真空成膜装置
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
KR100640550B1 (ko) * 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US8282334B2 (en) 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
RU2571547C2 (ru) 2011-04-07 2015-12-20 Пикосан Ой Реактор для осаждения с плазменным источником

Similar Documents

Publication Publication Date Title
JP2014517498A5 (OSRAM)
US10619247B2 (en) Substrate processing apparatus, injector, and substrate processing method
WO2012136876A8 (en) Atomic layer deposition with plasma source
WO2014128267A3 (fr) Dispositif de dépôt chimique en phase vapeur
WO2012087002A3 (ko) 화학 기상 증착 장치 및 이를 사용한 발광소자 제조방법
WO2012136875A8 (en) Deposition reactor with plasma source
TW201500184A (en) Corrosion resistant aluminum coating on plasma chamber components
TWI719940B (zh) 氣體供給裝置及閥裝置
WO2008024932A3 (en) Hotwall reactor and method for reducing particle formation in gan mocvd
WO2008011579A3 (en) Small volume symmetric flow single wafer ald apparatus
JP2009212531A5 (OSRAM)
JP2013151720A5 (OSRAM)
JP2015146347A5 (OSRAM)
ATE551438T1 (de) Cvd-reaktor mit absenkbarer prozesskammerdecke
TW200745372A (en) Catalyst body chemical vapor phase growing apparatus
WO2012056341A3 (en) Closed chamber for wafer wet processing
GB2470704A (en) Isolation valve with corrosion protected and heat transfer enhanced valve actuator and closure apparatus and method
CN105493230A (zh) 具有冷却真空密闭体的热壁反应器
JP2018505551A5 (OSRAM)
WO2012047035A3 (ko) 대칭형 유입구 및 유출구를 통해 반응가스를 공급하는 기판 처리 장치
TWD149224S (zh) 電漿處理裝置用內襯材
WO2009031419A1 (ja) 真空処理システム
KR102217790B1 (ko) 기체 화합물들을 퍼징하기 위한 장치 및 방법
JP2017505377A (ja) プロセスチャンバのインシトゥ洗浄のための方法および装置
WO2013019425A3 (en) Sputter-etch tool and liners