WO2013019425A3 - Sputter-etch tool and liners - Google Patents

Sputter-etch tool and liners Download PDF

Info

Publication number
WO2013019425A3
WO2013019425A3 PCT/US2012/047439 US2012047439W WO2013019425A3 WO 2013019425 A3 WO2013019425 A3 WO 2013019425A3 US 2012047439 W US2012047439 W US 2012047439W WO 2013019425 A3 WO2013019425 A3 WO 2013019425A3
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
anode
etch
plasma
inlet
Prior art date
Application number
PCT/US2012/047439
Other languages
French (fr)
Other versions
WO2013019425A2 (en
Inventor
Teruo Sasagawa
Original Assignee
Qualcomm Mems Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies, Inc. filed Critical Qualcomm Mems Technologies, Inc.
Priority to JP2014522892A priority Critical patent/JP2014523144A/en
Priority to KR1020147005573A priority patent/KR20140064826A/en
Priority to CN201280038145.XA priority patent/CN103718269A/en
Publication of WO2013019425A2 publication Critical patent/WO2013019425A2/en
Publication of WO2013019425A3 publication Critical patent/WO2013019425A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Abstract

This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.
PCT/US2012/047439 2011-07-29 2012-07-19 Sputter-etch tool and liners WO2013019425A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014522892A JP2014523144A (en) 2011-07-29 2012-07-19 Sputter etching tool and liner
KR1020147005573A KR20140064826A (en) 2011-07-29 2012-07-19 Sputter-etch tool and liners
CN201280038145.XA CN103718269A (en) 2011-07-29 2012-07-19 Sputter-etch tool and liners

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/194,801 2011-07-29
US13/194,801 US20130026136A1 (en) 2011-07-29 2011-07-29 Sputter-etch tool and liners

Publications (2)

Publication Number Publication Date
WO2013019425A2 WO2013019425A2 (en) 2013-02-07
WO2013019425A3 true WO2013019425A3 (en) 2013-04-04

Family

ID=46705027

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/047439 WO2013019425A2 (en) 2011-07-29 2012-07-19 Sputter-etch tool and liners

Country Status (6)

Country Link
US (1) US20130026136A1 (en)
JP (1) JP2014523144A (en)
KR (1) KR20140064826A (en)
CN (1) CN103718269A (en)
TW (1) TW201308424A (en)
WO (1) WO2013019425A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
EP2808735B1 (en) * 2012-01-27 2017-03-22 Asahi Kasei Kabushiki Kaisha Fine concavo-convex structure product, mold fabrication method, and use of a heat-reactive resist material
US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
TWI467150B (en) * 2013-06-05 2015-01-01 Univ Dayeh Method of detecting anti-fluoride corrosion resistance of anodically oxidized aluminum film
JP6649689B2 (en) * 2015-03-16 2020-02-19 株式会社ディスコ Decompression processing apparatus and wafer holding method
US10403476B2 (en) * 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0266604A2 (en) * 1986-11-03 1988-05-11 International Business Machines Corporation Anode plate for a parallel-plate reactive ion etching reactor
JPH02280324A (en) * 1989-04-21 1990-11-16 Fuji Electric Co Ltd Dry etching method
US6030508A (en) * 1995-11-02 2000-02-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber having a gas baffle with improved uniformity
US6436253B1 (en) * 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600464A (en) * 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
JPS61292920A (en) * 1985-06-21 1986-12-23 Hitachi Micro Comput Eng Ltd Plasma treater
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
US4999320A (en) * 1988-03-31 1991-03-12 Texas Instruments Incorporated Method for suppressing ionization avalanches in a helium wafer cooling assembly
JPH0355832A (en) * 1989-07-25 1991-03-11 Toshiba Corp Semiconductor production device
JPH03122293A (en) * 1989-10-04 1991-05-24 Nec Kyushu Ltd Reactive ion etching device
US5137610A (en) * 1991-04-15 1992-08-11 Motorola, Inc. Sputter chamber with extended protection plate and method of use
JPH0529274A (en) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp Semiconductor manufacturing device and cleaning method thereof
US5467883A (en) * 1992-12-14 1995-11-21 At&T Corp. Active neural network control of wafer attributes in a plasma etch process
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
JP2007300045A (en) * 2006-05-08 2007-11-15 Toshiba Matsushita Display Technology Co Ltd Dry etching device
JP5424628B2 (en) * 2008-12-11 2014-02-26 株式会社日立ハイテクノロジーズ Vacuum processing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0266604A2 (en) * 1986-11-03 1988-05-11 International Business Machines Corporation Anode plate for a parallel-plate reactive ion etching reactor
JPH02280324A (en) * 1989-04-21 1990-11-16 Fuji Electric Co Ltd Dry etching method
US6030508A (en) * 1995-11-02 2000-02-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber having a gas baffle with improved uniformity
US6436253B1 (en) * 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity

Also Published As

Publication number Publication date
JP2014523144A (en) 2014-09-08
US20130026136A1 (en) 2013-01-31
TW201308424A (en) 2013-02-16
KR20140064826A (en) 2014-05-28
WO2013019425A2 (en) 2013-02-07
CN103718269A (en) 2014-04-09

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