JP2014516899A - 新規な化合物半導体及びその活用 - Google Patents
新規な化合物半導体及びその活用 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 239000000126 substance Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 abstract description 62
- 230000000052 comparative effect Effects 0.000 description 24
- 239000003153 chemical reaction reagent Substances 0.000 description 20
- 239000010453 quartz Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000031700 light absorption Effects 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000004570 mortar (masonry) Substances 0.000 description 10
- 239000008188 pellet Substances 0.000 description 10
- 230000000630 rising effect Effects 0.000 description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 9
- 229920002554 vinyl polymer Polymers 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000872 buffer Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/75—Cobalt
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Abstract
Description
試薬として、In、Co、及びSbを用意し、これらを乳鉢(mortar)を利用してよく混合してIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb10及びIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb10及びIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb10組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12組成の混合物をペレットの形態で製作した。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12及びIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12及びIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12及びIn0.25Co4Sb11組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb9及びIn0.25Co4Sb10組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb9組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。
Claims (12)
- 上記化学式1のxは、0<x≦0.4であることを特徴とする請求項1に記載の化合物半導体。
- 上記化学式1のxは、0<x≦0.25であることを特徴とする請求項1に記載の化合物半導体。
- 上記化学式1のzは、0.9<z≦2であることを特徴とする請求項1に記載の化合物半導体。
- 上記化学式1のzは、0.9<z≦1.75であることを特徴とする請求項1に記載の化合物半導体。
- 上記化学式1のzは、1.0≦z≦1.5であることを特徴とする請求項1に記載の化合物半導体。
- 上記化学式1のzは、z=1.5であることを特徴とする請求項1に記載の化合物半導体。
- In、Co、Sb、及びTeを含む混合物を形成するステップと、
上記混合物を熱処理するステップと、
を含む請求項1に記載の化合物半導体の製造方法。 - 上記熱処理ステップは、400℃ないし800℃で行われることを特徴とする請求項8に記載の化合物半導体の製造方法。
- 上記熱処理ステップは、2つ以上の熱処理段階を含むことを特徴とする請求項8に記載の化合物半導体の製造方法。
- 請求項1に記載の化合物半導体を含む熱電変換素子。
- 請求項1に記載の化合物半導体を含む太陽電池。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110040401 | 2011-04-28 | ||
KR10-2011-0040401 | 2011-04-28 | ||
KR1020120043839A KR101357159B1 (ko) | 2011-04-28 | 2012-04-26 | 신규한 화합물 반도체 및 그 활용 |
PCT/KR2012/003255 WO2012148198A2 (ko) | 2011-04-28 | 2012-04-26 | 신규한 화합물 반도체 및 그 활용 |
KR10-2012-0043839 | 2012-04-26 |
Publications (2)
Publication Number | Publication Date |
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JP2014516899A true JP2014516899A (ja) | 2014-07-17 |
JP5774141B2 JP5774141B2 (ja) | 2015-09-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013557658A Active JP5774141B2 (ja) | 2011-04-28 | 2012-04-26 | 新規な化合物半導体及びその活用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8747705B2 (ja) |
EP (1) | EP2703345B1 (ja) |
JP (1) | JP5774141B2 (ja) |
KR (1) | KR101357159B1 (ja) |
CN (1) | CN103502144B (ja) |
TW (1) | TWI457287B (ja) |
WO (1) | WO2012148198A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103562127B (zh) * | 2011-05-13 | 2016-07-13 | Lg化学株式会社 | 新的化合物半导体及其用途 |
EP2708498B1 (en) * | 2011-05-13 | 2017-08-16 | LG Chem, Ltd. | Novel compound semiconductor and usage for same |
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CN100452466C (zh) * | 2003-09-12 | 2009-01-14 | 密歇根州州立大学托管委员会 | 热电材料及其制备方法、热电元件以及从热能生成电流的方法 |
US8481843B2 (en) * | 2003-09-12 | 2013-07-09 | Board Of Trustees Operating Michigan State University | Silver-containing p-type semiconductor |
KR100910173B1 (ko) * | 2007-09-10 | 2009-07-30 | 충주대학교 산학협력단 | CoSb3 스커테루다이트계 열전재료 및 그 제조방법 |
CN101397612B (zh) * | 2008-10-21 | 2011-05-25 | 同济大学 | 一种方钴矿基热电块体材料的制备方法 |
KR101042575B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Fe-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
KR101042574B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Ni-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
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2012
- 2012-04-26 EP EP12776437.1A patent/EP2703345B1/en active Active
- 2012-04-26 WO PCT/KR2012/003255 patent/WO2012148198A2/ko unknown
- 2012-04-26 KR KR1020120043839A patent/KR101357159B1/ko active IP Right Grant
- 2012-04-26 JP JP2013557658A patent/JP5774141B2/ja active Active
- 2012-04-26 CN CN201280020831.4A patent/CN103502144B/zh active Active
- 2012-04-27 TW TW101115148A patent/TWI457287B/zh active
- 2012-09-14 US US13/617,177 patent/US8747705B2/en active Active
Patent Citations (7)
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JPH02199006A (ja) * | 1989-01-30 | 1990-08-07 | Agency Of Ind Science & Technol | 1/2/5の組成を有する多元系金属カルコゲナイド |
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US8747705B2 (en) | 2014-06-10 |
CN103502144A (zh) | 2014-01-08 |
WO2012148198A2 (ko) | 2012-11-01 |
JP5774141B2 (ja) | 2015-09-02 |
EP2703345A4 (en) | 2015-01-14 |
KR20120122933A (ko) | 2012-11-07 |
TW201305058A (zh) | 2013-02-01 |
WO2012148198A3 (ko) | 2012-12-20 |
TWI457287B (zh) | 2014-10-21 |
KR101357159B1 (ko) | 2014-02-04 |
EP2703345B1 (en) | 2018-07-25 |
US20130069019A1 (en) | 2013-03-21 |
CN103502144B (zh) | 2015-11-25 |
EP2703345A2 (en) | 2014-03-05 |
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