JP2014515559A - 発光デバイスを支持基板に取り付ける方法 - Google Patents

発光デバイスを支持基板に取り付ける方法 Download PDF

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Publication number
JP2014515559A
JP2014515559A JP2014513276A JP2014513276A JP2014515559A JP 2014515559 A JP2014515559 A JP 2014515559A JP 2014513276 A JP2014513276 A JP 2014513276A JP 2014513276 A JP2014513276 A JP 2014513276A JP 2014515559 A JP2014515559 A JP 2014515559A
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Prior art keywords
wafer
light emitting
support substrate
emitting device
semiconductor light
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Pending
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JP2014513276A
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Japanese (ja)
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JP2014515559A5 (enExample
Inventor
ダニエル アレキサンダー シュタイガーワルド
ジェローム チャンドラ バト
サルマン アクラム
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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Publication of JP2014515559A publication Critical patent/JP2014515559A/ja
Publication of JP2014515559A5 publication Critical patent/JP2014515559A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2014513276A 2011-06-01 2012-05-21 発光デバイスを支持基板に取り付ける方法 Pending JP2014515559A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161491918P 2011-06-01 2011-06-01
US61/491,918 2011-06-01
PCT/IB2012/052533 WO2012164431A1 (en) 2011-06-01 2012-05-21 Method of attaching a light emitting device to a support substrate

Related Child Applications (1)

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JP2017179650A Division JP6712579B2 (ja) 2011-06-01 2017-09-20 発光デバイスを支持基板に取り付ける方法

Publications (2)

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JP2014515559A true JP2014515559A (ja) 2014-06-30
JP2014515559A5 JP2014515559A5 (enExample) 2015-07-09

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JP2014513276A Pending JP2014515559A (ja) 2011-06-01 2012-05-21 発光デバイスを支持基板に取り付ける方法
JP2017179650A Active JP6712579B2 (ja) 2011-06-01 2017-09-20 発光デバイスを支持基板に取り付ける方法
JP2020095270A Active JP7134198B2 (ja) 2011-06-01 2020-06-01 発光デバイスを支持基板に取り付ける方法

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JP2020095270A Active JP7134198B2 (ja) 2011-06-01 2020-06-01 発光デバイスを支持基板に取り付ける方法

Country Status (7)

Country Link
US (3) US9153758B2 (enExample)
EP (1) EP2715814B8 (enExample)
JP (3) JP2014515559A (enExample)
KR (2) KR101932951B1 (enExample)
CN (2) CN103582958B (enExample)
TW (1) TWI586005B (enExample)
WO (1) WO2012164431A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016178307A (ja) * 2015-03-20 2016-10-06 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 発光ダイオードを備えた光電子デバイス
KR20170029077A (ko) * 2015-09-04 2017-03-15 삼성전자주식회사 발광소자 패키지
JP2019145690A (ja) * 2018-02-21 2019-08-29 日亜化学工業株式会社 発光装置及び発光装置の製造方法
KR20200008112A (ko) * 2017-04-27 2020-01-23 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 웨이퍼 스케일 접합 활성 포토닉스 인터포저
JP2021502711A (ja) * 2017-12-15 2021-01-28 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングＯＳＲＡＭ ＯＬＥＤ ＧｍｂＨ オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014515559A (ja) 2011-06-01 2014-06-30 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスを支持基板に取り付ける方法
US9105621B2 (en) * 2012-12-20 2015-08-11 Imec Method for bonding of group III-nitride device-on-silicon and devices obtained thereof
JP2014150196A (ja) * 2013-02-01 2014-08-21 Toshiba Corp 半導体発光装置およびその製造方法
KR20150101311A (ko) * 2014-02-26 2015-09-03 삼성전자주식회사 발광 소자 패키지
JP6407544B2 (ja) * 2014-03-28 2018-10-17 シチズン電子株式会社 Ｌｅｄ発光装置及びｌｅｄ発光装置の製造方法
CN107155373B (zh) * 2014-06-18 2019-01-15 艾克斯瑟乐普林特有限公司 微组装led显示器
KR102417181B1 (ko) * 2015-11-09 2022-07-05 삼성전자주식회사 발광 패키지, 반도체 발광 소자, 발광 모듈 및 발광 패키지의 제조 방법
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
DE102015121056A1 (de) 2015-12-03 2017-06-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Bauelementen und Bauelement
CN107482099B (zh) * 2016-06-08 2019-09-10 光宝光电(常州)有限公司 发光二极管封装结构
DE102018101815A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102018103169A1 (de) 2018-02-13 2019-08-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
DE102019121678B4 (de) * 2019-08-12 2025-02-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit verbesserter wärmeabfuhr und verfahren zur herstellung eines bauelements
CN111106210A (zh) * 2019-12-30 2020-05-05 晶能光电（江西）有限公司 Mini LED芯片制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284602A1 (en) * 2004-06-30 2007-12-13 Ashay Chitnis Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法
JP2011071273A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置の製造方法及び半導体発光装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197742A (ja) * 1997-09-22 1999-04-09 Nichia Chem Ind Ltd 窒化物半導体素子
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US7038288B2 (en) * 2002-09-25 2006-05-02 Microsemi Corporation Front side illuminated photodiode with backside bump
KR20040062074A (ko) * 2002-12-31 2004-07-07 엘지전자 주식회사 광기록재생기용 스윙 암 조립체의 에프피시비 고정구조
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
JP2004356230A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 発光装置およびその製造方法
US6876008B2 (en) 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
KR100862453B1 (ko) * 2004-11-23 2008-10-08 삼성전기주식회사 ＧａＮ 계 화합물 반도체 발광소자
JP2006332501A (ja) * 2005-05-30 2006-12-07 Konica Minolta Opto Inc 発光ダイオード（ｌｅｄ）及び発光ダイオードの製造方法
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
KR100640496B1 (ko) * 2005-11-23 2006-11-01 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2006279080A (ja) * 2006-07-10 2006-10-12 Sanyo Electric Co Ltd 発光素子ウエハの固定方法
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
CN101027954A (zh) 2007-04-06 2007-09-05 王清山 组合式多功能播种机
DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8916890B2 (en) 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US7859000B2 (en) * 2008-04-10 2010-12-28 Cree, Inc. LEDs using single crystalline phosphor and methods of fabricating same
US7734123B2 (en) * 2008-05-02 2010-06-08 Intel Corporation Evanescent III-V silicon photonics device with spin coat bonding
JP2010040894A (ja) * 2008-08-07 2010-02-18 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP5276412B2 (ja) * 2008-11-04 2013-08-28 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP5375041B2 (ja) * 2008-11-13 2013-12-25 日亜化学工業株式会社 発光装置およびその製造方法
KR100990122B1 (ko) * 2008-12-02 2010-10-29 한국광기술원 교류 발광 다이오드 칩 및 그의 제조방법
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP5521325B2 (ja) * 2008-12-27 2014-06-11 日亜化学工業株式会社 発光装置及びその製造方法
US8704257B2 (en) * 2009-03-31 2014-04-22 Epistar Corporation Light-emitting element and the manufacturing method thereof
TWI480962B (zh) * 2009-04-09 2015-04-11 隆達電子股份有限公司 發光二極體封裝以及發光二極體晶圓級封裝製程
JP5482378B2 (ja) * 2009-04-20 2014-05-07 日亜化学工業株式会社 発光装置
JP5726409B2 (ja) * 2009-07-01 2015-06-03 シャープ株式会社 発光装置および発光装置の製造方法
JP2011071272A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2011199221A (ja) * 2010-03-24 2011-10-06 Hitachi Cable Ltd 発光ダイオード
KR101762173B1 (ko) * 2011-01-13 2017-08-04 삼성전자 주식회사 웨이퍼 레벨 발광 소자 패키지 및 그의 제조 방법
JP2014515559A (ja) 2011-06-01 2014-06-30 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスを支持基板に取り付ける方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284602A1 (en) * 2004-06-30 2007-12-13 Ashay Chitnis Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法
JP2011071273A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置の製造方法及び半導体発光装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016178307A (ja) * 2015-03-20 2016-10-06 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 発光ダイオードを備えた光電子デバイス
KR20170029077A (ko) * 2015-09-04 2017-03-15 삼성전자주식회사 발광소자 패키지
KR102374268B1 (ko) 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
KR20200008112A (ko) * 2017-04-27 2020-01-23 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 웨이퍼 스케일 접합 활성 포토닉스 인터포저
JP2020519015A (ja) * 2017-04-27 2020-06-25 ザ リサーチ ファンデーション フォー ザ ステート ユニバーシティ オブ ニューヨーク ウェハスケール接着アクティブフォトニクスインタポーザ
US11435523B2 (en) 2017-04-27 2022-09-06 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
KR102581742B1 (ko) 2017-04-27 2023-09-22 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 웨이퍼 스케일 접합 활성 포토닉스 인터포저
US11841531B2 (en) 2017-04-27 2023-12-12 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
JP2021502711A (ja) * 2017-12-15 2021-01-28 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングＯＳＲＡＭ ＯＬＥＤ ＧｍｂＨ オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
JP7047094B2 (ja) 2017-12-15 2022-04-04 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
JP2019145690A (ja) * 2018-02-21 2019-08-29 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP7235944B2 (ja) 2018-02-21 2023-03-09 日亜化学工業株式会社 発光装置及び発光装置の製造方法

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