JP2014511146A5 - - Google Patents

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Publication number
JP2014511146A5
JP2014511146A5 JP2014505353A JP2014505353A JP2014511146A5 JP 2014511146 A5 JP2014511146 A5 JP 2014511146A5 JP 2014505353 A JP2014505353 A JP 2014505353A JP 2014505353 A JP2014505353 A JP 2014505353A JP 2014511146 A5 JP2014511146 A5 JP 2014511146A5
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JP
Japan
Prior art keywords
dopant material
silicon
concentration
zone
growth
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Pending
Application number
JP2014505353A
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English (en)
Japanese (ja)
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JP2014511146A (ja
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Publication date
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Priority claimed from PCT/US2012/033593 external-priority patent/WO2012142463A2/en
Publication of JP2014511146A publication Critical patent/JP2014511146A/ja
Publication of JP2014511146A5 publication Critical patent/JP2014511146A5/ja
Pending legal-status Critical Current

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JP2014505353A 2011-04-14 2012-04-13 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 Pending JP2014511146A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161475351P 2011-04-14 2011-04-14
US61/475,351 2011-04-14
PCT/US2012/033593 WO2012142463A2 (en) 2011-04-14 2012-04-13 Silicon ingot having uniform multiple dopants and method and apparatus for producing same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016099240A Division JP2016179937A (ja) 2011-04-14 2016-05-18 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置

Publications (2)

Publication Number Publication Date
JP2014511146A JP2014511146A (ja) 2014-05-12
JP2014511146A5 true JP2014511146A5 (cg-RX-API-DMAC10.html) 2015-05-07

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ID=47010006

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014505353A Pending JP2014511146A (ja) 2011-04-14 2012-04-13 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置
JP2016099240A Pending JP2016179937A (ja) 2011-04-14 2016-05-18 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置

Family Applications After (1)

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JP2016099240A Pending JP2016179937A (ja) 2011-04-14 2016-05-18 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置

Country Status (9)

Country Link
US (1) US10202705B2 (cg-RX-API-DMAC10.html)
EP (1) EP2697412B1 (cg-RX-API-DMAC10.html)
JP (2) JP2014511146A (cg-RX-API-DMAC10.html)
KR (1) KR20140097971A (cg-RX-API-DMAC10.html)
CN (1) CN103608496B (cg-RX-API-DMAC10.html)
MY (1) MY173316A (cg-RX-API-DMAC10.html)
PH (1) PH12013502137A1 (cg-RX-API-DMAC10.html)
TW (1) TWI618678B (cg-RX-API-DMAC10.html)
WO (1) WO2012142463A2 (cg-RX-API-DMAC10.html)

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US9834857B2 (en) * 2013-05-16 2017-12-05 S-Tech Co., Ltd. Ingot raw material supply system
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
US10724148B2 (en) * 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
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US10337117B2 (en) * 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
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WO2018012654A1 (ko) * 2016-07-14 2018-01-18 포토멕 주식회사 실리콘 반도체 잉곳 제조용 투입장치 및 도핑방법
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
CN111511965A (zh) * 2017-09-08 2020-08-07 各星有限公司 用于提拉晶体生长的混合坩埚组件
EP3864197B1 (en) * 2018-10-12 2022-08-03 GlobalWafers Co., Ltd. Dopant concentration control in silicon melt to enhance the ingot quality
KR102872672B1 (ko) 2019-04-11 2025-10-20 글로벌웨이퍼스 씨오., 엘티디. 말기 본체 길이에서 감소된 왜곡을 갖는 잉곳을 준비하기 위한 프로세스
KR102576552B1 (ko) 2019-04-18 2023-09-07 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 단결정 실리콘 잉곳을 성장시키기 위한 방법들
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
WO2021050176A1 (en) * 2019-09-13 2021-03-18 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
TWI784689B (zh) * 2020-09-29 2022-11-21 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US12588445B2 (en) 2022-08-24 2026-03-24 Semiconductor Components Industries, Llc Methods of manufacturing semiconductor devices and semiconductor devices
US12546028B2 (en) 2023-05-25 2026-02-10 Globalwafers Co., Ltd. Ingot puller apparatus having dopant feeders for adding a plurality of dopant batches
US12662749B2 (en) 2023-05-25 2026-06-23 GlobalWafers, Co. Ltd. Methods for adding a plurality of dopant batches to an ingot puller apparatus

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