JP2014239091A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
Description
102・・・シャワープレート
103・・・誘電体窓
104・・・処理室
105・・・ガス供給装置
106・・・真空排気装置
107・・・導波管
109・・・電磁波発生用高周波電源
110・・・磁場発生用コイル
111・・・試料載置用電極
112・・・ウエハ
113・・・整合器
114・・・高周波バイアス電源
115・・・高周波フィルター
116・・・直流電源
117・・・排気用開閉バルブ
118・・・排気速度可変バルブ
120・・・制御部
121・・・パルス発生ユニット
Claims (8)
- 真空容器と、前記真空容器内にプラズマを生成するための第一の高周波電力を供給する第一の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記第二の高周波電力の反射電力を抑制する整合器とを備えるプラズマ処理装置において、
前記第一の高周波電力と前記第二の高周波電力が時間変調される場合、前記整合器は、前記時間変調された第二の高周波電力のオン開始時間を開始時間とする所定時間経過後から前記時間変調された第二の高周波電力のオン終了時間までの期間とするサンプリング有効期間に整合を行うための情報をサンプリングし、前記オン終了時間後から次のサンプリング有効期間までは、前記サンプリング有効期間に行われた整合状態を維持する制御が行われることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定時間を前記第二の高周波電力のピークトウピーク値であるVppが安定するのに要する時間とすることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定時間を前記プラズマの発光強度が安定するのに要する時間とすることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定時間をプラズマ密度が安定するのに要する時間とすることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記第二の高周波電力を時間変調する周波数は、前記整合器のサンプリング周波数の整数倍とすることを特徴とするプラズマ処理装置。 - 真空容器と、前記真空容器内にプラズマを生成するための第一の高周波電力を供給する第一の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記第二の高周波電力の反射電力を抑制する整合器とを備えるプラズマ処理装置において、
前記第一の高周波電力と前記第二の高周波電力が時間変調される場合、前記整合器は、前記時間変調された第二の高周波電力のオン終了時間から所定時間前までの期間であるサンプリング有効期間に整合を行うための情報をサンプリングし、前記オン終了時間後から次のサンプリング有効期間までは、前記サンプリング有効期間に行われた整合状態を維持する制御が行われることを特徴とするプラズマ処理装置。 - 請求項6に記載のプラズマ処理装置において、
前記第二の高周波電力を時間変調する周波数は、前記整合器のサンプリング周波数の整数倍とすることを特徴とするプラズマ処理装置。 - 真空容器と、前記真空容器内にプラズマを生成するための第一の高周波電力を供給する第一の高周波電源と、前記真空容器内に配置され試料を載置する試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記第二の高周波電力の反射電力を抑制する整合器とを備えるプラズマ処理装置を用いたプラズマ処理方法において、
前記第一の高周波電力と前記第二の高周波電力を時間変調し、
前記時間変調された第二の高周波電力のオン終了時間から所定時間前までの期間であるサンプリング有効期間に整合を行うための情報をサンプリングするとともに前記オン終了時間後から次のサンプリング有効期間までは、前記サンプリング有効期間に行われた整合状態を維持して前記整合器の整合を行うことを特徴とするプラズマ処理方法。
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JP2013119396A JP6180799B2 (ja) | 2013-06-06 | 2013-06-06 | プラズマ処理装置 |
TW102148436A TWI492262B (zh) | 2013-06-06 | 2013-12-26 | Plasma processing device and plasma processing method |
CN201410030630.3A CN104241071B (zh) | 2013-06-06 | 2014-01-22 | 等离子体处理装置及等离子体处理方法 |
KR1020140013111A KR101589168B1 (ko) | 2013-06-06 | 2014-02-05 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US14/183,556 US9336999B2 (en) | 2013-06-06 | 2014-02-19 | Plasma processing apparatus and plasma processing method |
KR1020160004679A KR101819922B1 (ko) | 2013-06-06 | 2016-01-14 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US15/132,701 US10192718B2 (en) | 2013-06-06 | 2016-04-19 | Plasma processing apparatus and plasma processing method |
US16/050,089 US11004658B2 (en) | 2013-06-06 | 2018-07-31 | Plasma processing apparatus and plasma processing method |
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JP6180799B2 (ja) | 2017-08-16 |
CN104241071B (zh) | 2017-03-01 |
KR20160011221A (ko) | 2016-01-29 |
KR20140143316A (ko) | 2014-12-16 |
KR101819922B1 (ko) | 2018-01-18 |
US11004658B2 (en) | 2021-05-11 |
US20160233057A1 (en) | 2016-08-11 |
US20180337022A1 (en) | 2018-11-22 |
US10192718B2 (en) | 2019-01-29 |
TWI492262B (zh) | 2015-07-11 |
US20140363977A1 (en) | 2014-12-11 |
CN104241071A (zh) | 2014-12-24 |
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KR101589168B1 (ko) | 2016-01-27 |
US9336999B2 (en) | 2016-05-10 |
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