JP2014236153A5 - - Google Patents

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Publication number
JP2014236153A5
JP2014236153A5 JP2013118017A JP2013118017A JP2014236153A5 JP 2014236153 A5 JP2014236153 A5 JP 2014236153A5 JP 2013118017 A JP2013118017 A JP 2013118017A JP 2013118017 A JP2013118017 A JP 2013118017A JP 2014236153 A5 JP2014236153 A5 JP 2014236153A5
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JP
Japan
Prior art keywords
type diffusion
diffusion layer
electrode
semiconductor
semiconductor substrate
Prior art date
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Application number
JP2013118017A
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English (en)
Japanese (ja)
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JP2014236153A (ja
JP6107435B2 (ja
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Priority to JP2013118017A priority Critical patent/JP6107435B2/ja
Priority claimed from JP2013118017A external-priority patent/JP6107435B2/ja
Priority to US14/198,763 priority patent/US9012959B2/en
Priority to DE102014209931.5A priority patent/DE102014209931B4/de
Publication of JP2014236153A publication Critical patent/JP2014236153A/ja
Publication of JP2014236153A5 publication Critical patent/JP2014236153A5/ja
Application granted granted Critical
Publication of JP6107435B2 publication Critical patent/JP6107435B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013118017A 2013-06-04 2013-06-04 半導体装置及びその製造方法 Expired - Fee Related JP6107435B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013118017A JP6107435B2 (ja) 2013-06-04 2013-06-04 半導体装置及びその製造方法
US14/198,763 US9012959B2 (en) 2013-06-04 2014-03-06 Semiconductor device
DE102014209931.5A DE102014209931B4 (de) 2013-06-04 2014-05-23 Halbleitervorrichtung und Verfahren zu deren Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013118017A JP6107435B2 (ja) 2013-06-04 2013-06-04 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2014236153A JP2014236153A (ja) 2014-12-15
JP2014236153A5 true JP2014236153A5 (enExample) 2016-04-28
JP6107435B2 JP6107435B2 (ja) 2017-04-05

Family

ID=51899650

Family Applications (1)

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JP2013118017A Expired - Fee Related JP6107435B2 (ja) 2013-06-04 2013-06-04 半導体装置及びその製造方法

Country Status (3)

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US (1) US9012959B2 (enExample)
JP (1) JP6107435B2 (enExample)
DE (1) DE102014209931B4 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6107435B2 (ja) * 2013-06-04 2017-04-05 三菱電機株式会社 半導体装置及びその製造方法
US9111750B2 (en) * 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
JP2015073073A (ja) * 2013-09-06 2015-04-16 三菱電機株式会社 半導体装置およびその製造方法
US10153276B2 (en) * 2014-12-17 2018-12-11 Infineon Technologies Austria Ag Group III heterojunction semiconductor device having silicon carbide-containing lateral diode
US9773898B2 (en) * 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US10192980B2 (en) * 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
EP3525232A1 (en) * 2018-02-09 2019-08-14 Nexperia B.V. Semiconductor device and method of manufacturing the same
JP7131155B2 (ja) * 2018-07-18 2022-09-06 サンケン電気株式会社 半導体装置
JP7364997B2 (ja) * 2019-03-13 2023-10-19 テキサス インスツルメンツ インコーポレイテッド 窒化物半導体基板
CN111902937A (zh) * 2020-06-04 2020-11-06 英诺赛科（珠海）科技有限公司 半导体装置及其制造方法
CN112038336B (zh) * 2020-06-15 2023-03-24 湖南三安半导体有限责任公司 氮化物器件及其esd防护结构和制作方法
US11881478B2 (en) * 2020-07-01 2024-01-23 Innoscience (Zhuhai) Technology Co., Ltd. High electron mobility transistor device and method for manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2002170963A (ja) * 2000-12-01 2002-06-14 Sanken Electric Co Ltd 半導体素子、半導体装置、及び半導体素子の製造方法
JP4961646B2 (ja) * 2001-08-29 2012-06-27 株式会社デンソー 半導体装置およびその製造方法
JP4542912B2 (ja) * 2005-02-02 2010-09-15 株式会社東芝 窒素化合物半導体素子
JP4645313B2 (ja) * 2005-06-14 2011-03-09 富士電機システムズ株式会社 半導体装置
JP2008235612A (ja) * 2007-03-21 2008-10-02 Denso Corp 保護素子
JP5319084B2 (ja) 2007-06-19 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2010010262A (ja) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd 半導体装置
JP5524462B2 (ja) 2008-08-06 2014-06-18 シャープ株式会社 半導体装置
US7915645B2 (en) 2009-05-28 2011-03-29 International Rectifier Corporation Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
US9607876B2 (en) * 2010-12-15 2017-03-28 Efficient Power Conversion Corporation Semiconductor devices with back surface isolation
JP5678866B2 (ja) 2011-10-31 2015-03-04 株式会社デンソー 半導体装置およびその製造方法
JP2013118017A (ja) 2013-03-21 2013-06-13 Occs Planning Corp 電子広告配信システム及び方法
JP6107435B2 (ja) * 2013-06-04 2017-04-05 三菱電機株式会社 半導体装置及びその製造方法

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