JP2014197624A - 縦型熱処理装置の運転方法、縦型熱処理装置及び記憶媒体 - Google Patents
縦型熱処理装置の運転方法、縦型熱処理装置及び記憶媒体 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 37
- 238000003860 storage Methods 0.000 title claims description 5
- 238000011017 operating method Methods 0.000 title claims 3
- 239000007789 gas Substances 0.000 claims abstract description 176
- 238000006243 chemical reaction Methods 0.000 claims abstract description 156
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- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000012495 reaction gas Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 67
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 238000003379 elimination reaction Methods 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 239000007795 chemical reaction product Substances 0.000 claims description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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Abstract
【解決手段】クリーニング工程の後、ダミー用の半導体基板または導電性基板が保持された基板保持具を前記反応容器内に搬入し、前記第1のガスを反応容器内に供給する段階を行わずに、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階を行う除電工程を行う。然る後、第1のガスを前記反応容器内に供給する段階と、第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成する成膜工程を行う。
【選択図】図6
Description
周囲に加熱部が設けられた縦型の反応容器内にクリーニング用のガスを供給して当該反応容器内をクリーニングするクリーニング工程と、
前記クリーニング工程の後、前記第1のガスノズルから第1のガスを前記反応容器内に供給する段階と、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成するプリコート工程と、
前記クリーニング工程の後、ダミー用の半導体基板または導電性基板が保持された基板保持具を前記反応容器内に搬入し、前記第1のガスを反応容器内に供給する段階を行わずに、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階を行う除電工程と、
前記プリコート工程及び除電工程を行った後、複数の製品用の半導体基板が保持された基板保持具を前記反応容器内に搬入する工程と、
続いて、前記第1のガスノズルから第1のガスを前記反応容器内に供給する段階と、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成する成膜工程と、を含むことを特徴とする。
W1 ダミーウエハ
1 反応容器
2 マニホールド
10 縦型熱処理装置
33 クリーニングガス供給管
51 第1の原料ガスノズル
52 第2の原料ガスノズル
70 プラズマ発生部
73 プラズマ電極
Claims (9)
- 原料ガスである第1のガスを供給するための第1のガスノズルと、第1のガスの分子と反応して反応生成物を生成する反応ガスである第2のガスを供給するための第2のガスノズルと、を備えた縦型熱処理装置を運転する方法において、
周囲に加熱部が設けられた縦型の反応容器内にクリーニング用のガスを供給して当該反応容器内をクリーニングするクリーニング工程と、
前記クリーニング工程の後、前記第1のガスノズルから第1のガスを前記反応容器内に供給する段階と、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成するプリコート工程と、
前記クリーニング工程の後、ダミー用の半導体基板または導電性基板が保持された基板保持具を前記反応容器内に搬入し、前記第1のガスを反応容器内に供給する段階を行わずに、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階を行う除電工程と、
前記プリコート工程及び除電工程を行った後、複数の製品用の半導体基板が保持された基板保持具を前記反応容器内に搬入する工程と、
続いて、前記第1のガスノズルから第1のガスを前記反応容器内に供給する段階と、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成する成膜工程と、を含むことを特徴とする縦型熱処理装置の運転方法。 - 前記ダミー用の半導体基板または導電性基板が反応容器内に搬入された状態で行われる、第2のガスをプラズマ化する段階は、プラズマ発生用電極から電界を間欠的に発生させることにより行われることを特徴とする請求項1記載の縦型熱処理装置の運転方法。
- 前記除電工程は、前記プリコート工程の後に行われることを特徴とする請求項1または2記載の縦型熱処理装置の運転方法。
- 第1のガスはシラン系のガスであり、第2のガスはアンモニアガスであることを特徴とする請求項1ないし3のいずれか一項に記載の縦型熱処理装置の運転方法。
- 周囲に加熱部が設けられた縦型の反応容器と、原料ガスである第1のガスを前記反応容器内に供給するための第1のガスノズルと、第1のガスの分子と反応して反応生成物を生成する反応ガスである第2のガスを前記反応容器内に供給するための第2のガスノズルと、前記反応容器内にクリーニング用のガスを供給するためのクリーニングガス供給部と、を備えた縦型熱処理装置において、
前記反応容器内に前記クリーニング用のガスを供給して反応容器内をクリーニングするクリーニング工程と、
前記クリーニング工程の後、前記第1のガスノズルから第1のガスを前記反応容器内に供給する段階と、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成するプリコート工程と、
前記クリーニング工程の後、ダミー用の半導体基板または導電性基板が保持された基板保持具が前記反応容器内に搬入された状態で、前記第1のガスを反応容器内に供給する段階を行わずに、前記第2のガスノズルから第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階を行う除電工程と、
前記プリコート工程及び除電工程を行った後、複数の製品用の半導体基板が保持された基板保持具が前記反応容器内に搬入された状態で、第1のガスを前記反応容器内に供給する段階と、第2のガスを前記反応容器内に供給すると共に第2のガスをプラズマ化する段階と、を交互に複数回行うことにより反応容器内に薄膜を形成する成膜工程と、
を行うように制御信号を出力する制御部を備えることを特徴とする縦型熱処理装置。 - プラズマ発生用電極を備え、
前記制御部は、前記第2のガスをプラズマ化する段階を行うために前記プラズマ発生用電極から電界を間欠的に発生させるように制御信号を出力することを特徴とする請求項5記載の縦型熱処理装置。 - 前記除電工程が前記プリコート工程の後に行われるように、前記制御部により制御信号が出力されることを特徴とする請求項5または6記載の縦型熱処理装置。
- 第1のガスはシラン系のガスであり、第2のガスはアンモニアガスであることを特徴とする請求項5ないし7のいずれか一項に記載の縦型熱処理装置。
- 周囲に加熱部が設けられた縦型の反応容器内に、複数の基板が保持された基板保持具を搬入して熱処理を行う縦型熱処理装置に用いられるコンピュータプログラムを記憶した記憶媒体であって、
前記コンピュータプログラムは、請求項1ないし4のいずれか一項に記載の縦型熱処理装置の運転方法を実行するようにステップ群が組まれていることを特徴とする記憶媒体。
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