JP2014196542A - 銅エッチング液 - Google Patents
銅エッチング液 Download PDFInfo
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- JP2014196542A JP2014196542A JP2013073217A JP2013073217A JP2014196542A JP 2014196542 A JP2014196542 A JP 2014196542A JP 2013073217 A JP2013073217 A JP 2013073217A JP 2013073217 A JP2013073217 A JP 2013073217A JP 2014196542 A JP2014196542 A JP 2014196542A
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- etching
- copper plating
- copper
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- seed layer
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
【解決手段】セミアディティブ工法によるプリント配線板の製造で使用する硫酸/硫酸第二鉄系の銅エッチング液として、硫酸を54〜180g/Lの範囲内、硫酸第二鉄を16〜96g/Lの範囲内、5−アミノ−1H−テトラゾールを0.02〜0.15g/Lの範囲内で含有する水溶液とする。
【選択図】 なし
Description
Cu + 2FeCl3 → CuCl2 + 2FeCl2 式(1)
Cu + CuCl2 + 2Cl- → 2CuCl2 - 式(2)
本発明の銅エッチング液は、セミアディティブ工法によるプリント配線板の製造において、電解銅めっきでパターンを形成した後、シード層である無電解銅めっきのエッチング除去に使用する銅エッチング液であり、硫酸を54〜180g/L、好ましくは72〜180g/Lの範囲内、硫酸第二鉄を16〜96g/L、好ましくは24〜64g/Lの範囲内、5−アミノ−1H−テトラゾールを0.02〜0.15g/L、好ましくは0.03〜0.1g/Lの範囲内で含有するものである。
[実施例I]
<銅エッチング液の調製>
下記の表1〜表3に示される組成の銅エッチング液(実施例1〜実施例12、比較例1〜比較例22)を調製した。各銅エッチング液の液温は35℃とした。
上記のように調製した34種の銅エッチング液(実施例1〜実施例12、比較例1〜比較例22)について、以下のように、選択エッチング性の評価、パターン幅減少抑制の評価、アンダーカット抑制の評価、基板−パターン接合幅の評価を行い、結果を下記の表4〜表7に示した。
(エッチング速度・速度比の評価)
100mm×100mmの全面樹脂基板上に無電解銅めっきにより膜厚2μmの銅めっき被膜を形成して、評価基板Aを作製した。また、100mm×100mmの評価基板A上に電解銅めっきにより膜厚20μmの銅めっき被膜を形成して、評価基板Bを作製した。
上記のように算出したエッチング速度Va、Vbから、エッチング速度比(Va/Vb)を算出して表4〜表7に示した。
500mm×400mmの全面樹脂基板上に無電解銅めっきにより膜厚0.7μmの銅めっき被膜(シード層)を形成し、このシード層上にめっきレジストを設けて電解銅めっきにより膜厚12μm、ライン/スペース=7μm/7μmのパターンを形成し、レジストを除去した後、100mm×100mmのサイズに裁断して、評価基板Cを作製した。
上記と同様に、評価基板Cに対してジャストエッチング時間でのエッチング処理を行い、シード層除去後のパターンにおけるアンダーカットの有無を、収束イオンビーム装置(FIB)の走査イオン顕微鏡(SIM)像から観察した。そして、アンダーカットが存在する場合、パターン両側において基板表面に平行な方向でのアンダーカット量Wa、Wbを測定し、その平均値((Wa+Wb)/2)を算出してアンダーカット量(単位:μm)として表4〜表7に示した。
上記と同様に、評価基板Cに対してジャストエッチング時間でのエッチング処理を行い、シード層除去後のパターン幅Wを、上記と同様にレーザー顕微鏡を用いて測定し、また、パターン両側におけるアンダーカット量Wa、Wbを、上記と同様に収束イオンビーム装置(FIB)の走査イオン顕微鏡(SIM)像から測定し、基板とパターンとの接合幅W′(単位:μm)を下記の式から算出して表4〜表7に示した。
W′= W −(Wa+Wb)
さらに、酸/酸化剤が塩酸/塩化第二銅である比較例14は、スマットが付着してシード層の除去が困難であり、実用に供し得ないものであった。
Claims (1)
- セミアディティブ工法によるプリント配線板の製造で使用する銅エッチング液において、
硫酸を54〜180g/Lの範囲内、硫酸第二鉄を16〜96g/Lの範囲内、5−アミノ−1H−テトラゾールを0.02〜0.15g/Lの範囲内で含有することを特徴とする銅エッチング液。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013073217A JP5576525B1 (ja) | 2013-03-29 | 2013-03-29 | 銅エッチング液 |
PCT/JP2014/054301 WO2014156414A1 (ja) | 2013-03-29 | 2014-02-24 | 銅エッチング液 |
KR1020157015393A KR101682127B1 (ko) | 2013-03-29 | 2014-02-24 | 구리 에칭액 |
CN201480004011.5A CN104919087B (zh) | 2013-03-29 | 2014-02-24 | 铜蚀刻液 |
TW103110295A TWI606145B (zh) | 2013-03-29 | 2014-03-19 | Copper etching solution |
Applications Claiming Priority (1)
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---|---|---|---|
JP2013073217A JP5576525B1 (ja) | 2013-03-29 | 2013-03-29 | 銅エッチング液 |
Publications (2)
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JP5576525B1 JP5576525B1 (ja) | 2014-08-20 |
JP2014196542A true JP2014196542A (ja) | 2014-10-16 |
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ID=51579038
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Application Number | Title | Priority Date | Filing Date |
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JP2013073217A Active JP5576525B1 (ja) | 2013-03-29 | 2013-03-29 | 銅エッチング液 |
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---|---|
JP (1) | JP5576525B1 (ja) |
KR (1) | KR101682127B1 (ja) |
CN (1) | CN104919087B (ja) |
TW (1) | TWI606145B (ja) |
WO (1) | WO2014156414A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023119940A1 (ja) * | 2021-12-24 | 2023-06-29 | 日東電工株式会社 | 配線回路基板およびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3458036B2 (ja) * | 1996-03-05 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
JPH11256368A (ja) * | 1998-03-10 | 1999-09-21 | Asahi Denka Kogyo Kk | 薄銅箔用のエッチング液および薄銅箔のエッチング方法 |
JP2002266087A (ja) * | 2001-03-07 | 2002-09-18 | Hitachi Chem Co Ltd | 銅のエッチング液およびそれを用いたプリント配線板の製造方法 |
JP3962239B2 (ja) | 2001-10-30 | 2007-08-22 | 株式会社Adeka | エッチング剤組成物及びパターン形成方法 |
JP4434632B2 (ja) * | 2003-06-10 | 2010-03-17 | 三菱瓦斯化学株式会社 | プリント配線板の製造方法 |
TWI282377B (en) * | 2003-07-25 | 2007-06-11 | Mec Co Ltd | Etchant, replenishment solution and method for producing copper wiring using the same |
JP4430990B2 (ja) | 2004-06-29 | 2010-03-10 | 株式会社荏原電産 | セミアディティブ工法用回路形成エッチング液 |
JP2006111953A (ja) | 2004-10-18 | 2006-04-27 | Mec Kk | 銅又は銅合金のエッチング剤、その製造法、補給液及び配線基板の製造法 |
JP5273710B2 (ja) | 2007-11-27 | 2013-08-28 | メック株式会社 | エッチング剤 |
JP2009041112A (ja) * | 2008-10-16 | 2009-02-26 | Hitachi Chem Co Ltd | 銅のエッチング液およびそれを用いたプリント配線板の製造方法 |
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2013
- 2013-03-29 JP JP2013073217A patent/JP5576525B1/ja active Active
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2014
- 2014-02-24 CN CN201480004011.5A patent/CN104919087B/zh active Active
- 2014-02-24 KR KR1020157015393A patent/KR101682127B1/ko active IP Right Grant
- 2014-02-24 WO PCT/JP2014/054301 patent/WO2014156414A1/ja active Application Filing
- 2014-03-19 TW TW103110295A patent/TWI606145B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023119940A1 (ja) * | 2021-12-24 | 2023-06-29 | 日東電工株式会社 | 配線回路基板およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104919087B (zh) | 2017-03-15 |
KR20150110481A (ko) | 2015-10-02 |
JP5576525B1 (ja) | 2014-08-20 |
TW201443285A (zh) | 2014-11-16 |
TWI606145B (zh) | 2017-11-21 |
WO2014156414A1 (ja) | 2014-10-02 |
CN104919087A (zh) | 2015-09-16 |
KR101682127B1 (ko) | 2016-12-02 |
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