JP2014183195A5 - - Google Patents
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- Publication number
- JP2014183195A5 JP2014183195A5 JP2013056803A JP2013056803A JP2014183195A5 JP 2014183195 A5 JP2014183195 A5 JP 2014183195A5 JP 2013056803 A JP2013056803 A JP 2013056803A JP 2013056803 A JP2013056803 A JP 2013056803A JP 2014183195 A5 JP2014183195 A5 JP 2014183195A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- substrate
- insulating film
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 122
- 239000000758 substrate Substances 0.000 claims 42
- 230000003287 optical Effects 0.000 claims 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 6
- 229910052732 germanium Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- -1 silicon germanium Chemical compound 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000005755 formation reaction Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013056803A JP6091273B2 (ja) | 2013-03-19 | 2013-03-19 | 半導体装置とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013056803A JP6091273B2 (ja) | 2013-03-19 | 2013-03-19 | 半導体装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014183195A JP2014183195A (ja) | 2014-09-29 |
| JP2014183195A5 true JP2014183195A5 (ko) | 2016-03-31 |
| JP6091273B2 JP6091273B2 (ja) | 2017-03-08 |
Family
ID=51701617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013056803A Active JP6091273B2 (ja) | 2013-03-19 | 2013-03-19 | 半導体装置とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6091273B2 (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6514904B2 (ja) * | 2015-02-05 | 2019-05-15 | 富士通株式会社 | 光半導体素子 |
| JP6184539B2 (ja) * | 2016-02-18 | 2017-08-23 | 沖電気工業株式会社 | 半導体受光素子、光電融合モジュール、半導体受光素子の製造方法 |
| JP2018049856A (ja) * | 2016-09-20 | 2018-03-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2019117855A (ja) | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US11393939B2 (en) * | 2019-09-20 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Photo sensing device and method of fabricating the photo sensing device |
| US11393940B2 (en) | 2019-09-20 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photodetector and method for forming the same |
| US11404590B2 (en) * | 2019-09-20 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Photo sensing device and method of fabricating the photo sensing device |
| KR102639411B1 (ko) * | 2020-01-15 | 2024-02-26 | 도쿄엘렉트론가부시키가이샤 | 성막 방법, 성막 장치 및 반도체 장치의 제조 방법 |
| JP7468791B1 (ja) | 2022-12-01 | 2024-04-16 | 三菱電機株式会社 | 導波路型受光素子 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51107768A (ja) * | 1975-02-17 | 1976-09-24 | Siemens Ag | Heimendonotakaishirikonkubominoseizohoho |
| JPS57180147A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Semiconductor device |
| EP0227523A3 (en) * | 1985-12-19 | 1989-05-31 | SILICONIX Incorporated | Method for obtaining regions of dielectrically isolated single crystal silicon |
| JP2988353B2 (ja) * | 1995-03-13 | 1999-12-13 | 日本電気株式会社 | 光検出用の半導体装置及びその製造方法 |
| US20110084308A1 (en) * | 2007-08-08 | 2011-04-14 | Ter-Hoe Loh | Semiconductor arrangement and a method for manufacturing the same |
-
2013
- 2013-03-19 JP JP2013056803A patent/JP6091273B2/ja active Active
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