JP2014183092A - 半導体装置の製造方法およびそれに用いられるドライエッチング装置 - Google Patents
半導体装置の製造方法およびそれに用いられるドライエッチング装置 Download PDFInfo
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- 238000001312 dry etching Methods 0.000 title claims abstract description 101
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 62
- 150000001875 compounds Chemical class 0.000 claims abstract description 41
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 229910052724 xenon Inorganic materials 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 75
- 239000000758 substrate Substances 0.000 description 49
- 229910002704 AlGaN Inorganic materials 0.000 description 33
- 239000007789 gas Substances 0.000 description 15
- 238000009616 inductively coupled plasma Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】化合物半導体の表面を加工するドライエッチング工程の際にプラズマ生成領域にXe、Hg−Xe、UV光などを照射することでドライエッチングの反応を促進させる。これにより、より短時間で化合物半導体の表面加工が可能となり、表面のダメージを低減することが可能となる。したがって、ドライエッチング工程の後で熱処理や窒素プラズマを用いた後処理を行わなくても、ドライエッチング工程のみでダメージが低減された表面とすることができる。よって、3族元素の窒化物を主成分とする化合物半導体をドライエッチングする工程を含む半導体装置の製造方法において、製造工程の簡略化を図ることが可能となる。
【選択図】図3
Description
本発明の第1実施形態について説明する。本実施形態では、図1に示す半導体装置の製造工程中におけるドライエッチング工程において、本発明の一実施形態にかかる製造方法を適用している。
Si(111)やSiC,及びサファイヤなどの半絶縁性基板1の表面に、GaN層2およびn型のAlGaN層3が積層された構造を有する化合物半導体基板を用意する。例えば、半絶縁性基板1の表面に、GaN層2およびAlGaN層3をMOCVD(Metal Organic Chemical Vapor Deposition:有機金属気相成長)法や超高純度、高精度にしたMBE(Molecular Beam Epitaxy:分子線エピタキシー)法などによって形成する。
AlGaN層3の表面に、層間膜となる酸化膜10を形成した後、酸化膜10の表面に第2マスクとなるレジスト11を形成する。そして、フォトリソグラフィ工程を経てレジスト11をパターニングしたのち、このレジスト11をマスクとして酸化膜10をパターニングする。これにより、AlGaN層3の表面のうちリセス形状部3aの形成予定位置においてレジスト11および酸化膜10が開口させられる。この後、レジスト11および酸化膜10をマスクとして用いたドライエッチング工程を行うことで、AlGaN層3の表面をリセス加工したリセス形状部3aを形成する。このとき、ドライエッチング工程を図3に示すICP(Inductively Coupled Plasma:誘導結合型)ドライエッチング装置を用いて行っている。
リセス形状部3a内を含め、AlGaN層3の表面に酸化膜などの絶縁膜、不純物をドープしたPoly−Si、Alなどの金属材料を順に成膜したのち、図示しないマスクを用いてこれらをパターニングする。これにより、ゲート絶縁膜4、ゲート電極5およびゲート配線層6が形成される。
ゲート絶縁膜4、ゲート電極5およびゲート配線層6を覆いつつ、溝部3b、3cの形成予定領域が開口する絶縁膜及びマスクを形成する。例えば、絶縁膜は酸化膜12を形成した後、酸化膜12の表面にマスクとなるレジスト13を形成することで構成することができる。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してドライエッチング工程で用いるドライエッチング装置の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に対して被エッチング対象となる半導体装置の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態は、第1実施形態に対して被エッチング対象となる半導体装置の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
2 GaN層
3 AlGaN層
3a リセス形状部
4 ゲート絶縁膜
5 ゲート電極
7 ソース電極
8 ドレイン電極
20 チャンバー
20a ステージ
20b 入射部
20c 光源
Claims (9)
- 3族元素の窒化物を主成分とする化合物半導体(2、3)をチャンバー(20)内に配置されるステージ(20a)上に設置し、該チャンバー内にエッチングガスを供給すると共にプラズマを発生させて、ドライエッチングにて前記化合物半導体の表面を加工するドライエッチング工程を含み、
前記ドライエッチング工程では、該ドライエッチング中に前記チャンバー内に光照射を行うことを特徴とする化合物半導体にて構成される半導体装置の製造方法。 - 前記ドライエッチング工程では、前記光照射される光の波長を500nmよりも短波長とすることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記ドライエッチング工程では、前記光照射を前記化合物半導体の表面に行い、かつ、該表面での前記光照射の強度を0.05mW/cm2以上とすることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記ドライエッチング工程では、誘導結合型ドライエッチング装置を用いたドライエッチングを行い、該誘導結合型ドライエッチング装置に備えられる誘導結合型電極(21)に供給する電力を10W〜1000Wに設定すると共に、バイアス電源(22)におけるバイアスパワーを100W以下に設定することを特徴とする請求項1ないし3のいずれか1つに記載の半導体装置の製造方法。
- 前記ドライエッチング工程は、横型もしくは縦型の整流素子または横型もしくは縦型のスイッチングデバイスを備えた半導体装置であって、前記化合物半導体のうち、前記横型もしくは縦型の整流素子または前記横型もしくは縦型スイッチングデバイスにおける電極(5、7、8)が配置される表面をドライエッチングする際に適用されることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置の製造方法。
- 3族元素の窒化物を主成分とする化合物半導体(2、3)が搭載されるステージ(20a)と、
前記ステージが内蔵され、エッチングガスが導入される共にプラズマを発生させ、ドライエッチングにて前記化合物半導体の表面を加工するチャンバー(20)と、
前記チャンバー内に光照射を行う光源(23)と、を有することを特徴とするドライエッチング装置。 - 前記光源は、Xeランプ、Hg−XeランプもしくはUVランプのいずれかであることを特徴とする請求項6に記載のドライエッチング装置。
- 前記光源は、前記チャンバーの上方に配置され、前記ステージに対して垂直方向からプラズマ生成領域に光照射を行うことを特徴とする請求項6または7に記載のドライエッチング装置。
- 前記光源は、前記チャンバーの側面に配置され、該チャンバーの側面からプラズマ生成領域に光照射を行うことを特徴とする請求項6または7に記載のドライエッチング装置。
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JP6287143B2 (ja) | 2013-12-06 | 2018-03-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
CN105355550B (zh) * | 2015-12-02 | 2018-05-01 | 中国科学院微电子研究所 | Iii族氮化物低损伤刻蚀方法 |
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