JP2014160084A - 圧力センサ - Google Patents
圧力センサ Download PDFInfo
- Publication number
- JP2014160084A JP2014160084A JP2014085224A JP2014085224A JP2014160084A JP 2014160084 A JP2014160084 A JP 2014160084A JP 2014085224 A JP2014085224 A JP 2014085224A JP 2014085224 A JP2014085224 A JP 2014085224A JP 2014160084 A JP2014160084 A JP 2014160084A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- substrate
- differential pressure
- diaphragm
- signal converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 229910000833 kovar Inorganic materials 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000013013 elastic material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
- G01L19/0046—Fluidic connecting means using isolation membranes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
【解決手段】圧力センサは、機械的に測定された変数を電気信号に変換する測定素子3と、測定素子3からの電気信号をさらに処理する信号変換器4を有する。さらに、圧力センサは、基板1とともに、不活性な封入媒体を含む第1の閉鎖空洞6を形成する第1のダイアフラム5を有する。圧力センサの測定素子3の少なくとも一方の側には、アクティブ表面が備えられ、第1の空洞6内で封入媒体と直に接触される。信号変換器4は、不被覆の集積回路(unhoused integrated circuit)の形で、基板1上に配置される。さらに、圧力センサは、絶対圧、相対圧あるいは差圧を測定するのに適し得る。
【選択図】図1
Description
2 導体トラック
3 測定素子
4 信号変換器
5 第1のダイアフラム
6 第1の空洞
7 弾性材
8 中間層
9 切欠部
10 第2のダイアフラム
11 第2の空洞
12 接触領域
13 接続部
14 第1の窪み
15 第2の窪み
Claims (7)
- 電気部品に接触接続される導体トラックを有し、セラミックから構成される基板と、
前記基板の第1の窪みに配置され、機械的に測定された変数を電気信号に変換する測定素子と、
前記測定素子に前記基板の前記導体トラックを介して接触接続され、前記測定素子からの電気信号をさらに処理する信号変換器と、
前記基板とともに、第1の不活性な封入媒体を有する第1の閉鎖空洞を形成する第1のダイアフラムと、
を備え、
前記測定素子の少なくとも一方の側は、アクティブ表面を有し、前記第1の不活性な封入媒体と直に接触し、
前記基板と第2のダイアフラムとが、第2の不活性な封入媒体を有し前記基板において前記第1の閉鎖空洞とは反対側に配置された第2の閉鎖空洞を形成し、
前記測定素子の背面側は、前記第2の不活性な封入媒体と直に接触し、
前記伝導トラックは、前記第1の閉鎖空洞および前記第2の閉鎖空洞の外部に配置され、外部から接触接続することができる少なくとも1つの領域を有し、
前記信号変換器が、不被覆の集積回路(unhoused integrated circuit)の形態であり、
前記信号変換器は、前記基板の前記第1の窪みとは反対側に位置する第2の窪みに配置され、
前記信号変換器は、前記第2の不活性な封入媒体と直に接触する、
ことを特徴とする差圧センサ。 - リング状の形態を取る中間層が前記第1のダイアフラムと前記基板との間に配置され、
前記中間層が前記第1のダイアフラムにはんだ付けまたは溶接によって直に接続され、
前記中間層の熱膨張係数と前記基板の熱膨張係数とが一致する、
ことを特徴とする請求項1に記載の差圧センサ。 - 前記中間層はコバールを含む、
ことを特徴とする請求項2に記載の差圧センサ。 - 圧入力を行う2つの管状接続部を備え、
前記管状接続部の少なくとも一部は、前記第1のダイアフラムおよび/または第2のダイアフラム上に配置される、
ことを特徴とする請求項1乃至3のいずれか1項に記載の差圧センサ。 - 前記基板は、複数の層を有するセラミックから構成される、
ことを特徴とする請求項1乃至4のいずれか1項に記載の差圧センサ。 - 前記基板は、HTCC(高温同時焼成セラミック)で構成される、
ことを特徴とする請求項5に記載の差圧センサ。 - 前記基板は、LTCC(低温同時焼成セラミック)で構成される、
ことを特徴とする請求項5に記載の差圧センサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008021091.9 | 2008-04-28 | ||
DE102008021091A DE102008021091A1 (de) | 2008-04-28 | 2008-04-28 | Drucksensor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011506652A Division JP2011519041A (ja) | 2008-04-28 | 2009-04-20 | 圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014160084A true JP2014160084A (ja) | 2014-09-04 |
JP5739039B2 JP5739039B2 (ja) | 2015-06-24 |
Family
ID=40846118
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011506652A Pending JP2011519041A (ja) | 2008-04-28 | 2009-04-20 | 圧力センサ |
JP2014085224A Active JP5739039B2 (ja) | 2008-04-28 | 2014-04-17 | 圧力センサ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011506652A Pending JP2011519041A (ja) | 2008-04-28 | 2009-04-20 | 圧力センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8234926B2 (ja) |
EP (1) | EP2269020B1 (ja) |
JP (2) | JP2011519041A (ja) |
DE (1) | DE102008021091A1 (ja) |
WO (1) | WO2009132981A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8569851B2 (en) * | 2010-06-18 | 2013-10-29 | General Electric Company | Sensor and method for fabricating the same |
DE102014200082A1 (de) * | 2014-01-08 | 2015-07-09 | Robert Bosch Gmbh | Drucksensor zur Erfassung eines Drucks eines fluiden Mediums |
US9648745B2 (en) | 2014-10-22 | 2017-05-09 | Honeywell International Inc. | Systems and methods for mounting the printed wiring assembly to the header assembly of a pressure sensor |
DE102016200263A1 (de) * | 2016-01-13 | 2017-07-13 | Robert Bosch Gmbh | Mikromechanischer Drucksensor |
US10163660B2 (en) | 2017-05-08 | 2018-12-25 | Tt Electronics Plc | Sensor device with media channel between substrates |
US10285275B2 (en) | 2017-05-25 | 2019-05-07 | Tt Electronics Plc | Sensor device having printed circuit board substrate with built-in media channel |
DE102017122607A1 (de) * | 2017-09-28 | 2019-03-28 | Tdk Electronics Ag | Mediengetrennter Drucktransmitter |
US11015994B2 (en) | 2018-08-22 | 2021-05-25 | Rosemount Aerospace Inc. | Differential MEMS pressure sensors with a ceramic header body and methods of making differential MEMS pressure sensors |
CN209326840U (zh) | 2018-12-27 | 2019-08-30 | 热敏碟公司 | 压力传感器及压力变送器 |
DE102019123701B4 (de) * | 2019-09-04 | 2022-08-11 | Technische Universität Ilmenau | Vorrichtung und Verfahren zur Erfassung und Modifikation von Normal- und/oder Scherkräften, sowie deren Verwendung |
Citations (7)
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JPH0260838U (ja) * | 1988-10-27 | 1990-05-07 | ||
JP2003315193A (ja) * | 2002-04-24 | 2003-11-06 | Denso Corp | 圧力センサ |
JP2003337075A (ja) * | 2002-05-17 | 2003-11-28 | Nagano Keiki Co Ltd | 絶対圧型圧力センサ |
JP2005337970A (ja) * | 2004-05-28 | 2005-12-08 | Toyoda Mach Works Ltd | 半導体圧力センサ |
JP2006177919A (ja) * | 2004-11-26 | 2006-07-06 | Kyocera Corp | 圧力センサ |
JP2006220430A (ja) * | 2005-02-08 | 2006-08-24 | Jtekt Corp | 圧力センサ及びその製造方法 |
WO2007054070A1 (de) * | 2005-11-10 | 2007-05-18 | Epcos Ag | Mems-package und verfahren zur herstellung |
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-
2008
- 2008-04-28 DE DE102008021091A patent/DE102008021091A1/de not_active Ceased
-
2009
- 2009-04-20 EP EP09738025.7A patent/EP2269020B1/de active Active
- 2009-04-20 WO PCT/EP2009/054656 patent/WO2009132981A1/de active Application Filing
- 2009-04-20 JP JP2011506652A patent/JP2011519041A/ja active Pending
-
2010
- 2010-10-14 US US12/904,871 patent/US8234926B2/en active Active
-
2014
- 2014-04-17 JP JP2014085224A patent/JP5739039B2/ja active Active
Patent Citations (8)
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JPH0260838U (ja) * | 1988-10-27 | 1990-05-07 | ||
JP2003315193A (ja) * | 2002-04-24 | 2003-11-06 | Denso Corp | 圧力センサ |
JP2003337075A (ja) * | 2002-05-17 | 2003-11-28 | Nagano Keiki Co Ltd | 絶対圧型圧力センサ |
JP2005337970A (ja) * | 2004-05-28 | 2005-12-08 | Toyoda Mach Works Ltd | 半導体圧力センサ |
JP2006177919A (ja) * | 2004-11-26 | 2006-07-06 | Kyocera Corp | 圧力センサ |
JP2006220430A (ja) * | 2005-02-08 | 2006-08-24 | Jtekt Corp | 圧力センサ及びその製造方法 |
WO2007054070A1 (de) * | 2005-11-10 | 2007-05-18 | Epcos Ag | Mems-package und verfahren zur herstellung |
JP2009514691A (ja) * | 2005-11-10 | 2009-04-09 | エプコス アクチエンゲゼルシャフト | Memsパッケージおよび製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110083513A1 (en) | 2011-04-14 |
EP2269020B1 (de) | 2017-03-01 |
DE102008021091A1 (de) | 2009-10-29 |
JP5739039B2 (ja) | 2015-06-24 |
US8234926B2 (en) | 2012-08-07 |
JP2011519041A (ja) | 2011-06-30 |
WO2009132981A1 (de) | 2009-11-05 |
EP2269020A1 (de) | 2011-01-05 |
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