JP2014154866A - ドライエッチング装置及びドライエッチング装置用のクランプ - Google Patents

ドライエッチング装置及びドライエッチング装置用のクランプ Download PDF

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Publication number
JP2014154866A
JP2014154866A JP2013026323A JP2013026323A JP2014154866A JP 2014154866 A JP2014154866 A JP 2014154866A JP 2013026323 A JP2013026323 A JP 2013026323A JP 2013026323 A JP2013026323 A JP 2013026323A JP 2014154866 A JP2014154866 A JP 2014154866A
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JP
Japan
Prior art keywords
substrate
clamp
dry etching
etching apparatus
adhesion preventing
Prior art date
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Abandoned
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JP2013026323A
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English (en)
Japanese (ja)
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JP2014154866A5 (enExample
Inventor
Hideji Takahashi
秀治 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2013026323A priority Critical patent/JP2014154866A/ja
Priority to US14/181,279 priority patent/US20140224427A1/en
Publication of JP2014154866A publication Critical patent/JP2014154866A/ja
Publication of JP2014154866A5 publication Critical patent/JP2014154866A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2013026323A 2013-02-14 2013-02-14 ドライエッチング装置及びドライエッチング装置用のクランプ Abandoned JP2014154866A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013026323A JP2014154866A (ja) 2013-02-14 2013-02-14 ドライエッチング装置及びドライエッチング装置用のクランプ
US14/181,279 US20140224427A1 (en) 2013-02-14 2014-02-14 Dry etching apparatus and clamp therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013026323A JP2014154866A (ja) 2013-02-14 2013-02-14 ドライエッチング装置及びドライエッチング装置用のクランプ

Publications (2)

Publication Number Publication Date
JP2014154866A true JP2014154866A (ja) 2014-08-25
JP2014154866A5 JP2014154866A5 (enExample) 2014-10-23

Family

ID=51296640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013026323A Abandoned JP2014154866A (ja) 2013-02-14 2013-02-14 ドライエッチング装置及びドライエッチング装置用のクランプ

Country Status (2)

Country Link
US (1) US20140224427A1 (enExample)
JP (1) JP2014154866A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133449A (ja) * 2017-02-15 2018-08-23 Ｓｐｐテクノロジーズ株式会社 ＳｉＧｅ層のエッチング方法
JP2019054282A (ja) * 2018-12-07 2019-04-04 Ｓｐｐテクノロジーズ株式会社 ＳｉＧｅ層のエッチング方法
JP2020072243A (ja) * 2018-11-02 2020-05-07 株式会社アルバック ドライエッチング方法およびドライエッチング装置
US10739671B2 (en) * 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
JPWO2021024638A1 (enExample) * 2019-08-08 2021-02-11
KR20240110885A (ko) 2021-12-28 2024-07-16 교세라 가부시키가이샤 클램프용 지그 및 세정 장치

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016138218A1 (en) * 2015-02-25 2016-09-01 Applied Materials, Inc. Methods and apparatus for using alkyl amines for the selective removal of metal nitride
CN106298417B (zh) * 2015-05-14 2018-08-24 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN108439328A (zh) * 2018-03-12 2018-08-24 中国科学院光电技术研究所 一种制备柔性薄膜基底微纳米结构的充气薄膜方法
KR102623838B1 (ko) * 2018-08-20 2024-01-11 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2020086241A1 (en) * 2018-10-26 2020-04-30 Applied Materials, Inc. High density carbon films for patterning applications

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252094A (ja) * 1993-02-22 1994-09-09 Hitachi Ltd 半導体製造装置および半導体製造方法
JPH0722340A (ja) * 1993-07-06 1995-01-24 Sony Corp 成膜装置とこれを用いた成膜方法
JPH0897272A (ja) * 1994-09-29 1996-04-12 Kyocera Corp ウェハ支持部材
JPH10107130A (ja) * 1996-09-30 1998-04-24 Kyocera Corp ウエハ保持具
JPH10116816A (ja) * 1996-10-08 1998-05-06 Sanyo Electric Co Ltd ドライエッチング装置
US5942041A (en) * 1996-09-16 1999-08-24 Mosel-Vitelic, Inc. Non-sticking semi-conductor wafer clamp and method of making same
JP2000072529A (ja) * 1998-08-26 2000-03-07 Toshiba Ceramics Co Ltd 耐プラズマ部材およびそれを用いたプラズマ処理装置
JP2000100781A (ja) * 1998-09-18 2000-04-07 Miyazaki Oki Electric Co Ltd エッチング装置および半導体デバイスの製造方法
JP2000277458A (ja) * 1999-01-19 2000-10-06 Tokyo Electron Ltd クランプ機構及びこれを用いた成膜装置
JP2002299422A (ja) * 2001-03-29 2002-10-11 Sharp Corp クランプおよびそれを備えた半導体製造装置
JP2007190593A (ja) * 2006-01-19 2007-08-02 Seiko Epson Corp 基板保持装置及び基板加工装置
JP2011210967A (ja) * 2010-03-30 2011-10-20 Seiko Epson Corp 基板ホルダー

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832781A (en) * 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
JP2000243812A (ja) * 1999-02-19 2000-09-08 Nihon Ceratec Co Ltd 半導体ウェハ用クランプリング
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
JP2007281150A (ja) * 2006-04-05 2007-10-25 Tokyo Electron Ltd 処理装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252094A (ja) * 1993-02-22 1994-09-09 Hitachi Ltd 半導体製造装置および半導体製造方法
JPH0722340A (ja) * 1993-07-06 1995-01-24 Sony Corp 成膜装置とこれを用いた成膜方法
JPH0897272A (ja) * 1994-09-29 1996-04-12 Kyocera Corp ウェハ支持部材
US5942041A (en) * 1996-09-16 1999-08-24 Mosel-Vitelic, Inc. Non-sticking semi-conductor wafer clamp and method of making same
JPH10107130A (ja) * 1996-09-30 1998-04-24 Kyocera Corp ウエハ保持具
JPH10116816A (ja) * 1996-10-08 1998-05-06 Sanyo Electric Co Ltd ドライエッチング装置
JP2000072529A (ja) * 1998-08-26 2000-03-07 Toshiba Ceramics Co Ltd 耐プラズマ部材およびそれを用いたプラズマ処理装置
JP2000100781A (ja) * 1998-09-18 2000-04-07 Miyazaki Oki Electric Co Ltd エッチング装置および半導体デバイスの製造方法
JP2000277458A (ja) * 1999-01-19 2000-10-06 Tokyo Electron Ltd クランプ機構及びこれを用いた成膜装置
JP2002299422A (ja) * 2001-03-29 2002-10-11 Sharp Corp クランプおよびそれを備えた半導体製造装置
JP2007190593A (ja) * 2006-01-19 2007-08-02 Seiko Epson Corp 基板保持装置及び基板加工装置
JP2011210967A (ja) * 2010-03-30 2011-10-20 Seiko Epson Corp 基板ホルダー

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133449A (ja) * 2017-02-15 2018-08-23 Ｓｐｐテクノロジーズ株式会社 ＳｉＧｅ層のエッチング方法
US11906898B2 (en) 2017-11-10 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing phase shift photo masks
US10739671B2 (en) * 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
US12411404B2 (en) 2017-11-10 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing phase shift photo masks
JP2020072243A (ja) * 2018-11-02 2020-05-07 株式会社アルバック ドライエッチング方法およびドライエッチング装置
JP7191647B2 (ja) 2018-11-02 2022-12-19 株式会社アルバック ドライエッチング方法およびドライエッチング装置
JP2019054282A (ja) * 2018-12-07 2019-04-04 Ｓｐｐテクノロジーズ株式会社 ＳｉＧｅ層のエッチング方法
JPWO2021024638A1 (enExample) * 2019-08-08 2021-02-11
WO2021024638A1 (ja) * 2019-08-08 2021-02-11 京セラ株式会社 クランプ用治具および洗浄装置
JP7308955B2 (ja) 2019-08-08 2023-07-14 京セラ株式会社 クランプ用治具および洗浄装置
TWI827861B (zh) * 2019-08-08 2024-01-01 日商京瓷股份有限公司 夾持用輔助具及洗淨裝置
US12057328B2 (en) 2019-08-08 2024-08-06 Kyocera Corporation Clamping jig and cleaning device
KR20240110885A (ko) 2021-12-28 2024-07-16 교세라 가부시키가이샤 클램프용 지그 및 세정 장치

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