JP2014146623A - 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法 - Google Patents

半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法 Download PDF

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Publication number
JP2014146623A
JP2014146623A JP2013012531A JP2013012531A JP2014146623A JP 2014146623 A JP2014146623 A JP 2014146623A JP 2013012531 A JP2013012531 A JP 2013012531A JP 2013012531 A JP2013012531 A JP 2013012531A JP 2014146623 A JP2014146623 A JP 2014146623A
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Japan
Prior art keywords
etching
layer
etching method
substrate
mass
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JP2013012531A
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English (en)
Japanese (ja)
Inventor
Tadashi Inaba
正 稲葉
Tetsuya Kamimura
上村　　哲也
Atsushi Mizutani
篤史 水谷
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2013012531A priority Critical patent/JP2014146623A/ja
Priority to PCT/JP2014/051382 priority patent/WO2014115805A1/ja
Priority to TW103102556A priority patent/TWI611046B/zh
Publication of JP2014146623A publication Critical patent/JP2014146623A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2013012531A 2013-01-25 2013-01-25 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法 Pending JP2014146623A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013012531A JP2014146623A (ja) 2013-01-25 2013-01-25 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法
PCT/JP2014/051382 WO2014115805A1 (ja) 2013-01-25 2014-01-23 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法並びにエッチング液のキット
TW103102556A TWI611046B (zh) 2013-01-25 2014-01-24 半導體基板的蝕刻方法、蝕刻液及半導體元件的製造方法以及蝕刻液套組

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013012531A JP2014146623A (ja) 2013-01-25 2013-01-25 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法

Publications (1)

Publication Number Publication Date
JP2014146623A true JP2014146623A (ja) 2014-08-14

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JP2013012531A Pending JP2014146623A (ja) 2013-01-25 2013-01-25 半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法

Country Status (3)

Country Link
JP (1) JP2014146623A (zh)
TW (1) TWI611046B (zh)
WO (1) WO2014115805A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170042240A (ko) 2015-10-08 2017-04-18 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물 및 반도체소자의 세정방법, 그리고 반도체소자의 제조방법
KR20170044586A (ko) 2015-10-15 2017-04-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물, 반도체소자의 세정방법 및 반도체소자의 제조방법
KR20170124705A (ko) * 2016-05-03 2017-11-13 동우 화인켐 주식회사 질화티타늄 막의 식각액 조성물
KR20190041492A (ko) * 2016-09-29 2019-04-22 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018061670A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液、および積層体の処理方法
WO2023189353A1 (ja) * 2022-03-28 2023-10-05 富士フイルム株式会社 処理液、処理方法、電子デバイスの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183017A (ja) * 1998-12-11 2000-06-30 Nec Kyushu Ltd 薬液濃度制御装置
JP2005045285A (ja) * 1998-06-25 2005-02-17 Samsung Electronics Co Ltd 半導体素子の製造方法
JP2005097715A (ja) * 2003-08-19 2005-04-14 Mitsubishi Chemicals Corp チタン含有層用エッチング液及びチタン含有層のエッチング方法
JP2008285508A (ja) * 2007-05-15 2008-11-27 Mitsubishi Gas Chem Co Inc 洗浄用組成物
JP2009021516A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009019255A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009044129A (ja) * 2007-07-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2012256876A (ja) * 2011-05-17 2012-12-27 Fujifilm Corp エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045285A (ja) * 1998-06-25 2005-02-17 Samsung Electronics Co Ltd 半導体素子の製造方法
JP2000183017A (ja) * 1998-12-11 2000-06-30 Nec Kyushu Ltd 薬液濃度制御装置
JP2005097715A (ja) * 2003-08-19 2005-04-14 Mitsubishi Chemicals Corp チタン含有層用エッチング液及びチタン含有層のエッチング方法
JP2008285508A (ja) * 2007-05-15 2008-11-27 Mitsubishi Gas Chem Co Inc 洗浄用組成物
JP2009021516A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009019255A (ja) * 2007-07-13 2009-01-29 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2009044129A (ja) * 2007-07-13 2009-02-26 Tokyo Ohka Kogyo Co Ltd 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP2012256876A (ja) * 2011-05-17 2012-12-27 Fujifilm Corp エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170042240A (ko) 2015-10-08 2017-04-18 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물 및 반도체소자의 세정방법, 그리고 반도체소자의 제조방법
US10301581B2 (en) 2015-10-08 2019-05-28 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
KR20170044586A (ko) 2015-10-15 2017-04-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물, 반도체소자의 세정방법 및 반도체소자의 제조방법
KR20170124705A (ko) * 2016-05-03 2017-11-13 동우 화인켐 주식회사 질화티타늄 막의 식각액 조성물
KR102506218B1 (ko) 2016-05-03 2023-03-06 동우 화인켐 주식회사 질화티타늄 막의 식각액 조성물
KR20190041492A (ko) * 2016-09-29 2019-04-22 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법
KR102160019B1 (ko) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법

Also Published As

Publication number Publication date
WO2014115805A1 (ja) 2014-07-31
TWI611046B (zh) 2018-01-11
TW201439376A (zh) 2014-10-16

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