JP2014144906A - 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス - Google Patents
波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス Download PDFInfo
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- JP2014144906A JP2014144906A JP2013247147A JP2013247147A JP2014144906A JP 2014144906 A JP2014144906 A JP 2014144906A JP 2013247147 A JP2013247147 A JP 2013247147A JP 2013247147 A JP2013247147 A JP 2013247147A JP 2014144906 A JP2014144906 A JP 2014144906A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 73
- 239000011521 glass Substances 0.000 title claims abstract description 72
- 239000000463 material Substances 0.000 title claims abstract description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 68
- 230000005284 excitation Effects 0.000 claims description 24
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 8
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000010304 firing Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910017639 MgSi Inorganic materials 0.000 description 3
- 229910003564 SiAlON Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003668 SrAl Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】波長変換材料に用いられるガラスであって、質量%で、SiO2 40〜70%、B2O3 0〜25%、Al2O3 0.1〜20%、Li2O 0〜10%、Na2O 0〜15%、K2O 0〜15%、Li2O+Na2O+K2O 0.1〜25%、BaO 0.1〜20%及びZnO 0〜20%を含有し、かつ、軟化点が700℃未満であるガラス。
【選択図】図1
Description
表1及び2は実施例(試料A〜G)及び比較例(試料H〜J)に係るガラスを示している。
表3〜8は実施例(試料1〜7、11〜17、21〜27)及び比較例(8〜10、18〜20、28〜30)に係る波長変換部材を示している。
2 波長変換部材
3 光源
Claims (9)
- 波長変換材料に用いられるガラスであって、質量%で、SiO2 40〜70%、B2O3 0〜25%、Al2O3 0.1〜20%、Li2O 0〜10%、Na2O 0〜15%、K2O 0〜15%、Li2O+Na2O+K2O 0.1〜25%、BaO 0.1〜20%及びZnO 0〜20%を含有し、かつ、軟化点が700℃未満であるガラス。
- 軟化点が400℃以上である請求項1に記載のガラス。
- 粉末状である請求項1または2に記載のガラス。
- 請求項1〜3のいずれかに記載のガラスと、無機蛍光体と、を含有する波長変換材料。
- 無機蛍光体が、窒化物蛍光体、酸窒化物蛍光体、酸化物蛍光体、硫化物蛍光体、酸硫化物蛍光体、ハロゲン化物蛍光体及びアルミン酸塩蛍光体から選択される1種以上である請求項4に記載の波長変換材料。
- 無機蛍光体が、窒化物蛍光体、酸窒化物蛍光体及び酸化物蛍光体から選択される1種以上である請求項4に記載の波長変換材料。
- 請求項4〜6のいずれか一項に記載の波長変換材料を焼成してなる波長変換部材。
- ガラスマトリクス中に無機蛍光体が分散してなる波長変換部材であって、ガラスマトリクスが、質量%で、SiO2 40〜70%、B2O3 0〜25%、Li2O 0〜10%、Na2O 0〜15%、K2O 0〜15%、Li2O+Na2O+K2O 0.1〜25%、BaO 0.1〜20%、Al2O3 0.1〜20%及びZnO 0〜20%を含有し、かつ、軟化点が700℃未満であるガラスからなる波長変換部材。
- 請求項7または8に記載の波長変換部材、及び、波長変換部材に励起光を照射する光源を備えてなる発光デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013247147A JP6273799B2 (ja) | 2013-01-07 | 2013-11-29 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
PCT/JP2013/082921 WO2014106923A1 (ja) | 2013-01-07 | 2013-12-09 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
TW102146749A TW201434782A (zh) | 2013-01-07 | 2013-12-17 | 用於波長轉換材料之玻璃、波長轉換材料、波長轉換構件及發光裝置 |
Applications Claiming Priority (3)
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---|---|---|---|
JP2013000311 | 2013-01-07 | ||
JP2013000311 | 2013-01-07 | ||
JP2013247147A JP6273799B2 (ja) | 2013-01-07 | 2013-11-29 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
Publications (2)
Publication Number | Publication Date |
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JP2014144906A true JP2014144906A (ja) | 2014-08-14 |
JP6273799B2 JP6273799B2 (ja) | 2018-02-07 |
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JP2013247147A Active JP6273799B2 (ja) | 2013-01-07 | 2013-11-29 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
Country Status (3)
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JP (1) | JP6273799B2 (ja) |
TW (1) | TW201434782A (ja) |
WO (1) | WO2014106923A1 (ja) |
Cited By (6)
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JP2016196394A (ja) * | 2015-02-02 | 2016-11-24 | フエロ コーポレーション | 光学用途に使用するためのガラス組成物及びガラスフリット複合物 |
WO2019065011A1 (ja) * | 2017-09-27 | 2019-04-04 | 日本電気硝子株式会社 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
JP2019151522A (ja) * | 2018-03-02 | 2019-09-12 | クアーズテック株式会社 | 波長変換部材 |
US11034609B2 (en) | 2016-06-27 | 2021-06-15 | Nippon Electric Glass Co., Ltd. | Wavelength conversion member, and light emitting device using same |
JP2022063277A (ja) * | 2017-09-27 | 2022-04-21 | 日本電気硝子株式会社 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
JP2022063274A (ja) * | 2016-06-27 | 2022-04-21 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いてなる発光デバイス |
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JP6880528B2 (ja) | 2016-06-27 | 2021-06-02 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いてなる発光デバイス |
CN107265873A (zh) * | 2017-06-08 | 2017-10-20 | 上海应用技术大学 | 一种白光led封装用低熔点荧光玻璃片及其制备方法 |
US11072555B2 (en) | 2018-03-02 | 2021-07-27 | Coorstek Kk | Glass member |
JP7382013B2 (ja) | 2018-04-25 | 2023-11-16 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いた発光装置 |
CN111675489A (zh) * | 2020-06-28 | 2020-09-18 | 烟台布莱特光电材料有限公司 | 一种汽车照明用低熔点光学玻璃粉和玻璃陶瓷荧光片的制备方法 |
CN112979162A (zh) * | 2021-04-26 | 2021-06-18 | 烟台布莱特光电材料有限公司 | 一种汽车照明用Ra大于80的玻璃陶瓷荧光片的制备方法 |
CN114920455B (zh) * | 2022-06-06 | 2023-08-01 | 温州大学 | LED用(BaSr)2SiO4:Eu2+荧光玻璃及复合荧光玻璃的制备和应用 |
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JP2007302858A (ja) * | 2006-04-11 | 2007-11-22 | Nippon Electric Glass Co Ltd | 発光色変換材料及び発光色変換部材 |
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JP5633114B2 (ja) * | 2009-03-30 | 2014-12-03 | 日本電気硝子株式会社 | 蛍光体複合材料に用いられるSnO−P2O5系ガラス |
JP5619533B2 (ja) * | 2010-09-01 | 2014-11-05 | 日亜化学工業株式会社 | 発光装置 |
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2013
- 2013-11-29 JP JP2013247147A patent/JP6273799B2/ja active Active
- 2013-12-09 WO PCT/JP2013/082921 patent/WO2014106923A1/ja active Application Filing
- 2013-12-17 TW TW102146749A patent/TW201434782A/zh unknown
Patent Citations (1)
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JP2007302858A (ja) * | 2006-04-11 | 2007-11-22 | Nippon Electric Glass Co Ltd | 発光色変換材料及び発光色変換部材 |
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JP7205808B2 (ja) | 2016-06-27 | 2023-01-17 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いてなる発光デバイス |
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TWI782996B (zh) * | 2017-09-27 | 2022-11-11 | 日商日本電氣硝子股份有限公司 | 用於波長轉換材料之玻璃、波長轉換材料、波長轉換構件及發光裝置 |
WO2019065011A1 (ja) * | 2017-09-27 | 2019-04-04 | 日本電気硝子株式会社 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
JP7339609B2 (ja) | 2017-09-27 | 2023-09-06 | 日本電気硝子株式会社 | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
US11804577B2 (en) | 2017-09-27 | 2023-10-31 | Nippon Electric Glass Co., Ltd. | Glass for use in wavelength conversion material, wavelength conversion material, wavelength conversion member, and light-emitting device |
TWI823604B (zh) * | 2017-09-27 | 2023-11-21 | 日商日本電氣硝子股份有限公司 | 用於波長轉換材料之玻璃、波長轉換材料、波長轉換構件及發光裝置 |
KR102654998B1 (ko) * | 2017-09-27 | 2024-04-05 | 니폰 덴키 가라스 가부시키가이샤 | 파장 변환 재료에 사용되는 유리, 파장 변환 재료, 파장 변환 부재 및 발광 디바이스 |
JP2019151522A (ja) * | 2018-03-02 | 2019-09-12 | クアーズテック株式会社 | 波長変換部材 |
JP7023745B2 (ja) | 2018-03-02 | 2022-02-22 | クアーズテック株式会社 | 波長変換部材 |
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TW201434782A (zh) | 2014-09-16 |
JP6273799B2 (ja) | 2018-02-07 |
WO2014106923A1 (ja) | 2014-07-10 |
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