JP2014127563A5 - - Google Patents
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- Publication number
- JP2014127563A5 JP2014127563A5 JP2012282429A JP2012282429A JP2014127563A5 JP 2014127563 A5 JP2014127563 A5 JP 2014127563A5 JP 2012282429 A JP2012282429 A JP 2012282429A JP 2012282429 A JP2012282429 A JP 2012282429A JP 2014127563 A5 JP2014127563 A5 JP 2014127563A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film according
- ligand
- semiconductor
- semiconductor quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 73
- 239000003446 ligand Substances 0.000 claims description 43
- 239000002096 quantum dot Substances 0.000 claims description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 12
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 12
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 125000001424 substituent group Chemical group 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 27
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims 2
- -1 InN Chemical compound 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 3
- PHTJBUCAVSBDHM-UHFFFAOYSA-N 2-(2-sulfanylethylamino)ethanethiol Chemical compound SCCNCCS PHTJBUCAVSBDHM-UHFFFAOYSA-N 0.000 description 2
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 description 1
- ISADKHQORCWQLD-UHFFFAOYSA-N 2-(2-aminoethylamino)ethanethiol Chemical compound NCCNCCS ISADKHQORCWQLD-UHFFFAOYSA-N 0.000 description 1
- GXGJIOMUZAGVEH-UHFFFAOYSA-N Chamazulene Chemical group CCC1=CC=C(C)C2=CC=C(C)C2=C1 GXGJIOMUZAGVEH-UHFFFAOYSA-N 0.000 description 1
- 229940093495 ethanethiol Drugs 0.000 description 1
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethyl mercaptane Natural products CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SCZVXVGZMZRGRU-UHFFFAOYSA-N n'-ethylethane-1,2-diamine Chemical compound CCNCCN SCZVXVGZMZRGRU-UHFFFAOYSA-N 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012282429A JP5964742B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
| PCT/JP2013/081498 WO2014103584A1 (ja) | 2012-12-26 | 2013-11-22 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
| US14/746,114 US10886421B2 (en) | 2012-12-26 | 2015-06-22 | Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012282429A JP5964742B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014127563A JP2014127563A (ja) | 2014-07-07 |
| JP2014127563A5 true JP2014127563A5 (https=) | 2015-07-16 |
| JP5964742B2 JP5964742B2 (ja) | 2016-08-03 |
Family
ID=51020678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012282429A Active JP5964742B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10886421B2 (https=) |
| JP (1) | JP5964742B2 (https=) |
| WO (1) | WO2014103584A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6008736B2 (ja) * | 2012-12-26 | 2016-10-19 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス |
| KR102449686B1 (ko) | 2015-09-18 | 2022-09-30 | 엘지전자 주식회사 | 광 변환 복합체, 이를 포함하는 광 변환 부재, 표시장치 및 발광소자 패키지및 이의 제조방법 |
| JP6959119B2 (ja) * | 2017-12-04 | 2021-11-02 | 信越化学工業株式会社 | 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 |
| US11050033B2 (en) * | 2018-04-24 | 2021-06-29 | Samsung Electronics Co., Ltd. | Light-emitting film, production method thereof, and a light emitting device including the same |
| WO2021002134A1 (ja) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | 半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法 |
| KR102642657B1 (ko) * | 2019-07-01 | 2024-02-29 | 후지필름 가부시키가이샤 | 광검출 소자, 광검출 소자의 제조 방법 및 이미지 센서 |
| JP7439585B2 (ja) * | 2020-03-13 | 2024-02-28 | ａｒｔｉｅｎｃｅ株式会社 | 光電変換素子及び光電変換層形成用組成物 |
| WO2022134039A1 (zh) * | 2020-12-25 | 2022-06-30 | 京东方科技集团股份有限公司 | 量子点材料、发光器件及其制作方法、显示装置 |
| US20240164128A1 (en) * | 2021-03-09 | 2024-05-16 | Sharp Kabushiki Kaisha | Method for patterning nanoparticle film, method for manufacturing light-emitting device, and light-emitting device |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4425470B2 (ja) | 1998-09-18 | 2010-03-03 | マサチューセッツ インスティテュート オブ テクノロジー | 半導体ナノ結晶の生物学的用途 |
| JP4404489B2 (ja) * | 1998-09-18 | 2010-01-27 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
| US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| ATE551723T1 (de) * | 2005-08-25 | 2012-04-15 | Edward Sargent | Optische quantum-dot-vorrichtungen mit erhöhter verstärkung und empfindlichkeit |
| TW200802903A (en) * | 2006-02-16 | 2008-01-01 | Solexant Corp | Nanoparticle sensitized nanostructured solar cells |
| US8643058B2 (en) * | 2006-07-31 | 2014-02-04 | Massachusetts Institute Of Technology | Electro-optical device including nanocrystals |
| EP2250212A1 (en) * | 2008-02-25 | 2010-11-17 | Nanoco Technologies Limited | Semiconductor nanoparticle capping agents |
| WO2010068282A2 (en) * | 2008-12-10 | 2010-06-17 | The Regents Of The University Of California | Compositions and methods for synthesis of hydrogen fuel |
| WO2011074492A1 (ja) * | 2009-12-18 | 2011-06-23 | 株式会社 村田製作所 | 薄膜形成方法、及び量子ドットデバイス |
| US8834747B2 (en) * | 2010-03-04 | 2014-09-16 | Lockheed Martin Corporation | Compositions containing tin nanoparticles and methods for use thereof |
| GB201005601D0 (en) * | 2010-04-01 | 2010-05-19 | Nanoco Technologies Ltd | Ecapsulated nanoparticles |
| GB201010831D0 (en) * | 2010-06-28 | 2010-08-11 | Ct Angewandte Nanotech Can | A micellular combination comprising a nanoparticle and a plurality of surfmer ligands |
| US20120031490A1 (en) * | 2010-08-03 | 2012-02-09 | Honeywell International Inc. | Quantum dot solar cells and methods for manufacturing such solar cells |
| WO2012071107A1 (en) * | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
| WO2012112821A1 (en) * | 2011-02-16 | 2012-08-23 | Sandia Solar Technologies Llc | Solar absorbing films with enhanced electron mobility and methods of their preparation |
| KR20130067137A (ko) * | 2011-12-13 | 2013-06-21 | 삼성전자주식회사 | 양자점-매트릭스 박막 및 그의 제조방법 |
| US20140102536A1 (en) * | 2012-03-16 | 2014-04-17 | Nanosensing Technologies, Inc. | Composite Metallic Solar Cells |
| AU2013334164A1 (en) * | 2012-10-26 | 2015-04-09 | Research Triangle Institute | Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods |
-
2012
- 2012-12-26 JP JP2012282429A patent/JP5964742B2/ja active Active
-
2013
- 2013-11-22 WO PCT/JP2013/081498 patent/WO2014103584A1/ja not_active Ceased
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2015
- 2015-06-22 US US14/746,114 patent/US10886421B2/en active Active