JP2014112623A5 - - Google Patents

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Publication number
JP2014112623A5
JP2014112623A5 JP2012282431A JP2012282431A JP2014112623A5 JP 2014112623 A5 JP2014112623 A5 JP 2014112623A5 JP 2012282431 A JP2012282431 A JP 2012282431A JP 2012282431 A JP2012282431 A JP 2012282431A JP 2014112623 A5 JP2014112623 A5 JP 2014112623A5
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JP
Japan
Prior art keywords
semiconductor film
ligand
semiconductor
film according
general formula
Prior art date
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Application number
JP2012282431A
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English (en)
Japanese (ja)
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JP2014112623A (ja
JP6086721B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2012282431A priority Critical patent/JP6086721B2/ja
Priority claimed from JP2012282431A external-priority patent/JP6086721B2/ja
Priority to PCT/JP2013/077668 priority patent/WO2014069211A1/ja
Publication of JP2014112623A publication Critical patent/JP2014112623A/ja
Priority to US14/699,817 priority patent/US10050161B2/en
Publication of JP2014112623A5 publication Critical patent/JP2014112623A5/ja
Application granted granted Critical
Publication of JP6086721B2 publication Critical patent/JP6086721B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012282431A 2012-10-31 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス Active JP6086721B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012282431A JP6086721B2 (ja) 2012-10-31 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
PCT/JP2013/077668 WO2014069211A1 (ja) 2012-10-31 2013-10-10 半導体膜および半導体膜の製造方法
US14/699,817 US10050161B2 (en) 2012-10-31 2015-04-29 Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012241230 2012-10-31
JP2012241230 2012-10-31
JP2012282431A JP6086721B2 (ja) 2012-10-31 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Publications (3)

Publication Number Publication Date
JP2014112623A JP2014112623A (ja) 2014-06-19
JP2014112623A5 true JP2014112623A5 (https=) 2015-07-16
JP6086721B2 JP6086721B2 (ja) 2017-03-01

Family

ID=50627125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012282431A Active JP6086721B2 (ja) 2012-10-31 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Country Status (3)

Country Link
US (1) US10050161B2 (https=)
JP (1) JP6086721B2 (https=)
WO (1) WO2014069211A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5964744B2 (ja) * 2012-12-26 2016-08-03 富士フイルム株式会社 半導体膜の製造方法
EP3490002B1 (en) 2016-07-20 2024-05-01 Sony Group Corporation Semiconductor film, photoelectric conversion element, solid-state imaging element, and electronic device
EP3399344B1 (en) * 2017-05-03 2021-06-30 ams International AG Semiconductor device for indirect detection of electromagnetic radiation and method of production
KR102584733B1 (ko) * 2018-09-30 2023-10-05 티씨엘 테크놀로지 그룹 코포레이션 퀀텀닷
JP7589454B2 (ja) * 2020-06-17 2024-11-26 artience株式会社 光電変換素子及び光電変換層形成用組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4425470B2 (ja) 1998-09-18 2010-03-03 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノ結晶の生物学的用途
JP2002048795A (ja) * 2000-07-31 2002-02-15 Mitsubishi Chemicals Corp オリゴペプチド残基を結合してなる半導体超微粒子
US20040007169A1 (en) 2002-01-28 2004-01-15 Mitsubishi Chemical Corporation Semiconductor nanoparticles and thin film containing the same
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
JP2004315661A (ja) * 2003-04-16 2004-11-11 Mitsubishi Chemicals Corp 半導体超微粒子及び電界発光素子
JP5463538B2 (ja) * 2008-03-18 2014-04-09 国立大学法人 東京大学 有機薄膜トランジスタの製造方法
KR101699540B1 (ko) * 2009-07-08 2017-01-25 삼성전자주식회사 반도체 나노 결정 및 그 제조 방법
KR20130067137A (ko) * 2011-12-13 2013-06-21 삼성전자주식회사 양자점-매트릭스 박막 및 그의 제조방법

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