JP2014107303A5 - - Google Patents

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Publication number
JP2014107303A5
JP2014107303A5 JP2012256866A JP2012256866A JP2014107303A5 JP 2014107303 A5 JP2014107303 A5 JP 2014107303A5 JP 2012256866 A JP2012256866 A JP 2012256866A JP 2012256866 A JP2012256866 A JP 2012256866A JP 2014107303 A5 JP2014107303 A5 JP 2014107303A5
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JP
Japan
Prior art keywords
oxide semiconductor
semiconductor thin
thin film
less
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2012256866A
Other languages
English (en)
Japanese (ja)
Other versions
JP6107085B2 (ja
JP2014107303A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2012256866A external-priority patent/JP6107085B2/ja
Priority to JP2012256866A priority Critical patent/JP6107085B2/ja
Priority to US14/646,869 priority patent/US9368639B2/en
Priority to CN201380060993.5A priority patent/CN104798205B/zh
Priority to PCT/JP2013/081445 priority patent/WO2014080996A1/ja
Priority to KR1020157012834A priority patent/KR20150088793A/ko
Priority to TW102142591A priority patent/TWI594433B/zh
Publication of JP2014107303A publication Critical patent/JP2014107303A/ja
Publication of JP2014107303A5 publication Critical patent/JP2014107303A5/ja
Publication of JP6107085B2 publication Critical patent/JP6107085B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012256866A 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ Expired - Fee Related JP6107085B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012256866A JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ
KR1020157012834A KR20150088793A (ko) 2012-11-22 2013-11-21 산화물 반도체 박막과 그의 제조 방법 및 박막 트랜지스터
CN201380060993.5A CN104798205B (zh) 2012-11-22 2013-11-21 氧化物半导体薄膜及其制造方法以及薄膜晶体管
PCT/JP2013/081445 WO2014080996A1 (ja) 2012-11-22 2013-11-21 酸化物半導体薄膜とその製造方法および薄膜トランジスタ
US14/646,869 US9368639B2 (en) 2012-11-22 2013-11-21 Oxide semiconductor thin film, production method thereof, and thin film transistor
TW102142591A TWI594433B (zh) 2012-11-22 2013-11-22 氧化物半導體薄膜與其製造方法以及薄膜電晶體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012256866A JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2014107303A JP2014107303A (ja) 2014-06-09
JP2014107303A5 true JP2014107303A5 (enExample) 2015-12-03
JP6107085B2 JP6107085B2 (ja) 2017-04-05

Family

ID=50776173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012256866A Expired - Fee Related JP6107085B2 (ja) 2012-11-22 2012-11-22 酸化物半導体薄膜および薄膜トランジスタ

Country Status (6)

Country Link
US (1) US9368639B2 (enExample)
JP (1) JP6107085B2 (enExample)
KR (1) KR20150088793A (enExample)
CN (1) CN104798205B (enExample)
TW (1) TWI594433B (enExample)
WO (1) WO2014080996A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319262B (zh) * 2014-11-13 2017-02-01 京东方科技集团股份有限公司 一种多晶氧化物薄膜晶体管阵列基板及其制备方法
CN106435491B (zh) * 2015-08-06 2019-02-12 清华大学 溅射靶及氧化物半导体膜以及其制备方法
JP2019124598A (ja) * 2018-01-17 2019-07-25 住友金属鉱山株式会社 非晶質試料の結晶化温度測定方法および結晶化温度測定システム
JP7187775B2 (ja) * 2018-01-17 2022-12-13 住友金属鉱山株式会社 非晶質試料の結晶化温度測定方法および結晶化温度測定システム
CN109378274B (zh) * 2018-10-11 2022-04-22 吉林建筑大学 一种制备不同类型铟镓锌氧薄膜晶体管的方法
KR20200072408A (ko) * 2018-12-11 2020-06-22 한양대학교 산학협력단 인듐산화물층, 인듐 산화물층을 채널층으로 포함하는 박막트랜지스터, 및 박막트랜지스터의 제조방법
JP7326795B2 (ja) * 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
WO2025187689A1 (ja) * 2024-03-04 2025-09-12 出光興産株式会社 酸化物半導体膜、トランジスタ、及び酸化物半導体膜の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141186B2 (en) * 2002-10-29 2006-11-28 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
CN101680081B (zh) * 2007-03-20 2012-10-31 出光兴产株式会社 溅射靶、氧化物半导体膜及半导体器件
US8158974B2 (en) * 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
CN101911303B (zh) * 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
WO2009148154A1 (ja) 2008-06-06 2009-12-10 出光興産株式会社 酸化物薄膜用スパッタリングターゲットおよびその製造法
JP2010045263A (ja) 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
US8647537B2 (en) * 2008-09-19 2014-02-11 Idemitsu Kosan Co., Ltd. Oxide sintered body and sputtering target
KR101612147B1 (ko) 2008-10-23 2016-04-12 이데미쓰 고산 가부시키가이샤 박막 트랜지스터 및 그 제조방법
JP2010106291A (ja) 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
JP5553997B2 (ja) 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
JP2010251606A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタ
US20120037897A1 (en) 2009-04-17 2012-02-16 Bridgestone Corporation Thin film transistor and method for manufacturing thin film transistor
JP2010251604A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
EP2952493B1 (en) * 2009-08-05 2017-03-15 Sumitomo Metal Mining Co., Ltd. Oxide sintered body, production method therefor, target, and transparent conductive film
TW201119971A (en) * 2009-09-30 2011-06-16 Idemitsu Kosan Co Sintered in-ga-zn-o-type oxide
JP5437825B2 (ja) * 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
CN102918004B (zh) * 2010-06-02 2016-03-30 出光兴产株式会社 溅射靶

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