JP2014082289A5 - - Google Patents

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Publication number
JP2014082289A5
JP2014082289A5 JP2012228446A JP2012228446A JP2014082289A5 JP 2014082289 A5 JP2014082289 A5 JP 2014082289A5 JP 2012228446 A JP2012228446 A JP 2012228446A JP 2012228446 A JP2012228446 A JP 2012228446A JP 2014082289 A5 JP2014082289 A5 JP 2014082289A5
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JP
Japan
Prior art keywords
group
drawing apparatus
blanker
scanning direction
substrate
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JP2012228446A
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English (en)
Japanese (ja)
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JP2014082289A (ja
JP6087570B2 (ja
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Priority to JP2012228446A priority Critical patent/JP6087570B2/ja
Priority claimed from JP2012228446A external-priority patent/JP6087570B2/ja
Priority to US14/054,314 priority patent/US9245715B2/en
Publication of JP2014082289A publication Critical patent/JP2014082289A/ja
Publication of JP2014082289A5 publication Critical patent/JP2014082289A5/ja
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Publication of JP6087570B2 publication Critical patent/JP6087570B2/ja
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JP2012228446A 2012-10-15 2012-10-15 描画装置、および物品の製造方法 Active JP6087570B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012228446A JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法
US14/054,314 US9245715B2 (en) 2012-10-15 2013-10-15 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012228446A JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法

Publications (3)

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JP2014082289A JP2014082289A (ja) 2014-05-08
JP2014082289A5 true JP2014082289A5 (enExample) 2015-11-26
JP6087570B2 JP6087570B2 (ja) 2017-03-01

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JP2012228446A Active JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法

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US (1) US9245715B2 (enExample)
JP (1) JP6087570B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101725299B1 (ko) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
NL2010760C2 (en) * 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
JP2015035563A (ja) * 2013-08-09 2015-02-19 キヤノン株式会社 描画データの生成方法、処理装置、プログラム、描画装置、および物品の製造方法
CN106463347B (zh) * 2014-06-13 2020-09-15 英特尔公司 即时电子束对准
WO2016028334A1 (en) 2014-08-19 2016-02-25 Intel Corporation Cross scan proximity correction with ebeam universal cutter
TWI578364B (zh) 2014-09-03 2017-04-11 Nuflare Technology Inc Inspection method of masking device with multiple charged particle beam
JP6847886B2 (ja) * 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751717B2 (ja) * 1991-03-13 1998-05-18 富士通株式会社 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
US5260579A (en) * 1991-03-13 1993-11-09 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
JP3121098B2 (ja) * 1992-03-17 2000-12-25 富士通株式会社 荷電粒子ビーム露光の方法と装置
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
GB2408383B (en) * 2003-10-28 2006-05-10 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
GB2413694A (en) * 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US8026495B2 (en) * 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
JP5743886B2 (ja) 2008-06-04 2015-07-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． ターゲットを露光するための方法およびシステム
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法

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