JP6087570B2 - 描画装置、および物品の製造方法 - Google Patents

描画装置、および物品の製造方法 Download PDF

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Publication number
JP6087570B2
JP6087570B2 JP2012228446A JP2012228446A JP6087570B2 JP 6087570 B2 JP6087570 B2 JP 6087570B2 JP 2012228446 A JP2012228446 A JP 2012228446A JP 2012228446 A JP2012228446 A JP 2012228446A JP 6087570 B2 JP6087570 B2 JP 6087570B2
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JP
Japan
Prior art keywords
blanker
charged particle
timing
supplied
drawing apparatus
Prior art date
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Active
Application number
JP2012228446A
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English (en)
Japanese (ja)
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JP2014082289A5 (enExample
JP2014082289A (ja
Inventor
森田　知之
知之 森田
村木　真人
真人 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012228446A priority Critical patent/JP6087570B2/ja
Priority to US14/054,314 priority patent/US9245715B2/en
Publication of JP2014082289A publication Critical patent/JP2014082289A/ja
Publication of JP2014082289A5 publication Critical patent/JP2014082289A5/ja
Application granted granted Critical
Publication of JP6087570B2 publication Critical patent/JP6087570B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0432—High speed and short duration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP2012228446A 2012-10-15 2012-10-15 描画装置、および物品の製造方法 Active JP6087570B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012228446A JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法
US14/054,314 US9245715B2 (en) 2012-10-15 2013-10-15 Drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012228446A JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2014082289A JP2014082289A (ja) 2014-05-08
JP2014082289A5 JP2014082289A5 (enExample) 2015-11-26
JP6087570B2 true JP6087570B2 (ja) 2017-03-01

Family

ID=50475619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012228446A Active JP6087570B2 (ja) 2012-10-15 2012-10-15 描画装置、および物品の製造方法

Country Status (2)

Country Link
US (1) US9245715B2 (enExample)
JP (1) JP6087570B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
NL2010760C2 (en) * 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
JP2015035563A (ja) * 2013-08-09 2015-02-19 キヤノン株式会社 描画データの生成方法、処理装置、プログラム、描画装置、および物品の製造方法
US10290528B2 (en) 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
JP6537593B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビームユニバーサルカッタを用いるクロススキャン近接効果補正
TWI578364B (zh) 2014-09-03 2017-04-11 Nuflare Technology Inc Inspection method of masking device with multiple charged particle beam
JP6847886B2 (ja) * 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751717B2 (ja) * 1991-03-13 1998-05-18 富士通株式会社 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
DE69226553T2 (de) * 1991-03-13 1998-12-24 Fujitsu Ltd., Kawasaki, Kanagawa Vorrichtung und Verfahren zur Belichtung mittels Ladungsträgerstrahlen
JP3121098B2 (ja) * 1992-03-17 2000-12-25 富士通株式会社 荷電粒子ビーム露光の方法と装置
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
GB2408383B (en) * 2003-10-28 2006-05-10 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
GB2413694A (en) * 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
WO2007048433A1 (en) * 2005-10-28 2007-05-03 Carl Zeiss Sms Gmbh Charged particle beam exposure system
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法

Also Published As

Publication number Publication date
US9245715B2 (en) 2016-01-26
US20140106279A1 (en) 2014-04-17
JP2014082289A (ja) 2014-05-08

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