JP2016522572A5 - - Google Patents

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JP2016522572A5
JP2016522572A5 JP2016511103A JP2016511103A JP2016522572A5 JP 2016522572 A5 JP2016522572 A5 JP 2016522572A5 JP 2016511103 A JP2016511103 A JP 2016511103A JP 2016511103 A JP2016511103 A JP 2016511103A JP 2016522572 A5 JP2016522572 A5 JP 2016522572A5
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apertures
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JP2016522572A (ja
JP6377724B2 (ja
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Priority claimed from PCT/EP2014/059106 external-priority patent/WO2014177718A1/en
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JP2016511103A 2013-05-03 2014-05-05 ビームグリッドレイアウト Active JP6377724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361818919P 2013-05-03 2013-05-03
US61/818,919 2013-05-03
PCT/EP2014/059106 WO2014177718A1 (en) 2013-05-03 2014-05-05 Beam grid layout

Publications (3)

Publication Number Publication Date
JP2016522572A JP2016522572A (ja) 2016-07-28
JP2016522572A5 true JP2016522572A5 (enExample) 2018-07-19
JP6377724B2 JP6377724B2 (ja) 2018-08-22

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JP2016511103A Active JP6377724B2 (ja) 2013-05-03 2014-05-05 ビームグリッドレイアウト

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US (2) US9934943B2 (enExample)
EP (2) EP3020062B1 (enExample)
JP (1) JP6377724B2 (enExample)
NL (1) NL2010760C2 (enExample)
WO (1) WO2014177718A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6537592B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビーム（ｅｂｅａｍ）直接書き込みシステムのためのコーナー部の丸み補正
EP3010031B1 (en) * 2014-10-16 2017-03-22 Fei Company Charged Particle Microscope with special aperture plate
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10395883B2 (en) * 2016-03-31 2019-08-27 Intel Corporation Aperture size modulation to enhance ebeam patterning resolution
IL312256A (en) * 2017-08-08 2024-06-01 Asml Netherlands Bv Charged particle blocking element, exposure apparatus comprising such an element, and method for using such an exposure apparatus
CN112352301B (zh) * 2018-06-12 2024-10-01 Asml荷兰有限公司 用于使用多束检查装置扫描样品的系统和方法
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
JP2021532545A (ja) 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． 複数の荷電粒子ビームのための装置
JP7234052B2 (ja) 2019-06-28 2023-03-07 株式会社ニューフレアテクノロジー マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
EP4100986A1 (en) * 2020-02-04 2022-12-14 Carl Zeiss MultiSEM GmbH Multi-beam digital scan and image acquisition
US20230086984A1 (en) * 2020-03-05 2023-03-23 Asml Netherlands B.V. Beam array geometry optimizer for multi-beam inspection system
WO2021219519A1 (en) 2020-05-01 2021-11-04 Asml Netherlands B.V. Enhanced architecture for high-performance detection device
WO2021239754A1 (en) 2020-05-28 2021-12-02 Asml Netherlands B.V. Enhanced architecture for high-performance detection device technical field
JP2022034866A (ja) * 2020-08-19 2022-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びその調整方法
CN116325069A (zh) 2020-09-03 2023-06-23 Asml荷兰有限公司 多束带电粒子柱
EP3982392A1 (en) 2020-10-08 2022-04-13 ASML Netherlands B.V. Multi-beam charged particle column
KR20230118106A (ko) * 2020-12-14 2023-08-10 에이에스엠엘 네델란즈 비.브이. 하전 입자의 다중 빔을 사용하여 샘플을 프로세싱하는 하전 입자 시스템, 방법
US20250343024A1 (en) * 2021-11-09 2025-11-06 Photo Electron Soul Inc. Electron gun, electron beam application device, and method for forming multi-electron beam
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
WO2023202819A1 (en) 2022-04-18 2023-10-26 Asml Netherlands B.V. Charged particle optical device and method
EP4280252A1 (en) 2022-05-16 2023-11-22 ASML Netherlands B.V. Charged particle optical device and method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3478775D1 (en) 1983-08-15 1989-07-27 Applied Materials Inc Apparatus and method for ion implantation
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
EP2302460A3 (en) 2002-10-25 2011-04-06 Mapper Lithography Ip B.V. Lithography system
CN101414535A (zh) 2002-10-30 2009-04-22 迈普尔平版印刷Ip有限公司 电子束曝光系统
US7129502B2 (en) 2003-03-10 2006-10-31 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
ATE358885T1 (de) 2003-05-28 2007-04-15 Mapper Lithography Ip Bv Beamlet-belichtungssystem mit geladenen teilchen
KR101100136B1 (ko) 2003-07-30 2011-12-29 마퍼 리쏘그라피 아이피 비.브이. 변조기 회로
GB2413694A (en) 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7391033B1 (en) 2005-05-04 2008-06-24 Kla-Tencor Technologies Corporation Skew-oriented multiple electron beam apparatus and method
US8890095B2 (en) 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
US8026495B2 (en) * 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
TWI432908B (zh) 2006-03-10 2014-04-01 瑪波微影Ｉｐ公司 微影系統及投射方法
US8258484B2 (en) 2008-04-15 2012-09-04 Mapper Lithography Ip B.V. Beamlet blanker arrangement
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
NL1037639C2 (en) * 2010-01-21 2011-07-25 Mapper Lithography Ip Bv Lithography system with lens rotation.
WO2012041464A1 (en) * 2010-09-28 2012-04-05 Applied Materials Israel Ltd. Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP6128744B2 (ja) * 2012-04-04 2017-05-17 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP6087570B2 (ja) * 2012-10-15 2017-03-01 キヤノン株式会社 描画装置、および物品の製造方法
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns

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