JP2016522572A5 - - Google Patents

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JP2016522572A5
JP2016522572A5 JP2016511103A JP2016511103A JP2016522572A5 JP 2016522572 A5 JP2016522572 A5 JP 2016522572A5 JP 2016511103 A JP2016511103 A JP 2016511103A JP 2016511103 A JP2016511103 A JP 2016511103A JP 2016522572 A5 JP2016522572 A5 JP 2016522572A5
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apertures
aperture array
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JP2016511103A
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JP2016522572A (ja
JP6377724B2 (ja
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Priority claimed from PCT/EP2014/059106 external-priority patent/WO2014177718A1/en
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JP2016511103A 2013-05-03 2014-05-05 ビームグリッドレイアウト Active JP6377724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361818919P 2013-05-03 2013-05-03
US61/818,919 2013-05-03
PCT/EP2014/059106 WO2014177718A1 (en) 2013-05-03 2014-05-05 Beam grid layout

Publications (3)

Publication Number Publication Date
JP2016522572A JP2016522572A (ja) 2016-07-28
JP2016522572A5 true JP2016522572A5 (enExample) 2018-07-19
JP6377724B2 JP6377724B2 (ja) 2018-08-22

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JP2016511103A Active JP6377724B2 (ja) 2013-05-03 2014-05-05 ビームグリッドレイアウト

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US (2) US9934943B2 (enExample)
EP (2) EP3020062B1 (enExample)
JP (1) JP6377724B2 (enExample)
NL (1) NL2010760C2 (enExample)
WO (1) WO2014177718A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6537592B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビーム（ｅｂｅａｍ）直接書き込みシステムのためのコーナー部の丸み補正
EP3010031B1 (en) * 2014-10-16 2017-03-22 Fei Company Charged Particle Microscope with special aperture plate
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10395883B2 (en) * 2016-03-31 2019-08-27 Intel Corporation Aperture size modulation to enhance ebeam patterning resolution
IL272370B2 (en) 2017-08-08 2024-10-01 Asml Netherlands Bv Charged particle blocking element, exposure apparatus comprising such an element, and method for using such an exposure apparatus
JP2021526716A (ja) 2018-06-12 2021-10-07 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置を使用してサンプルをスキャンするためのシステム及び方法
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
CN112567493B (zh) * 2018-08-09 2024-12-31 Asml荷兰有限公司 用于多个带电粒子束的装置
JP7234052B2 (ja) 2019-06-28 2023-03-07 株式会社ニューフレアテクノロジー マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
CN115053320B (zh) * 2020-02-04 2025-08-12 卡尔蔡司MultiSEM有限责任公司 多光束数字扫描以及图像获取
WO2021175685A1 (en) * 2020-03-05 2021-09-10 Asml Netherlands B.V. Beam array geometry optimizer for multi-beam inspection system
JP2022034866A (ja) * 2020-08-19 2022-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びその調整方法
WO2022048896A1 (en) 2020-09-03 2022-03-10 Asml Netherlands B.V. Multi-beam charged particle column
EP3982392A1 (en) 2020-10-08 2022-04-13 ASML Netherlands B.V. Multi-beam charged particle column
IL303577A (en) * 2020-12-14 2023-08-01 Asml Netherlands Bv Charged particle system, a sample processing method using multiple beams of charged particles
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
KR20240096776A (ko) * 2021-11-09 2024-06-26 가부시키가이샤 포토 일렉트론 소울 전자총, 전자선 적용 장치 및 멀티 전자빔의 형성 방법
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
EP4511860A1 (en) 2022-04-18 2025-02-26 ASML Netherlands B.V. Charged particle optical device and method
EP4280252A1 (en) 2022-05-16 2023-11-22 ASML Netherlands B.V. Charged particle optical device and method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145119A1 (en) * 1983-08-15 1985-06-19 Applied Materials, Inc. Apparatus for ion implantation
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
EP1554634B1 (en) 2002-10-25 2011-12-21 Mapper Lithography Ip B.V. Lithography system
CN101414125B (zh) 2002-10-30 2012-02-22 迈普尔平版印刷Ip有限公司 电子束曝光系统
EP2503587A3 (en) 2003-03-10 2017-08-23 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
GB2413694A (en) 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7391033B1 (en) 2005-05-04 2008-06-24 Kla-Tencor Technologies Corporation Skew-oriented multiple electron beam apparatus and method
US8890095B2 (en) 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
DE602005013134D1 (de) * 2005-10-28 2009-04-16 Zeiss Carl Sms Gmbh Belichtungssystem mit einem geladenen teilchenstrahl
TWI432908B (zh) 2006-03-10 2014-04-01 Mapper Lithography Ip Bv 微影系統及投射方法
US8258484B2 (en) * 2008-04-15 2012-09-04 Mapper Lithography Ip B.V. Beamlet blanker arrangement
KR101647768B1 (ko) 2008-06-04 2016-08-11 마퍼 리쏘그라피 아이피 비.브이. 타겟을 노출하는 방법 및 시스템
NL1037639C2 (en) * 2010-01-21 2011-07-25 Mapper Lithography Ip Bv Lithography system with lens rotation.
WO2012041464A1 (en) * 2010-09-28 2012-04-05 Applied Materials Israel Ltd. Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP6128744B2 (ja) * 2012-04-04 2017-05-17 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP6087570B2 (ja) * 2012-10-15 2017-03-01 キヤノン株式会社 描画装置、および物品の製造方法
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns

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